3875081 GE SOLID STATE Oi ve 3875081 0014153 1 I, T- 39-1 Standard Power MOSFETs RFNM12N08, RFM12N10, RFP12N08, RFP12N10 File Number 1386 N-Channel Enhancement-Mode . Power Field-Effect Transistors | 12 A, 80 and 100 V - ps (on): 0.20 Features: s = SOA is power-dissipation limited a Nanosecond switching speeds : Linear transfer characteristics a High input impedance = Majority carrier device 92CS -33741 N-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATIONS RFM12N08 RFM12N10 DRAIN SOURCE (FLANGE) The RFM12N08 and RFM12N10 and the RFP12N08 and RFP12N10 are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor GATE drivers, relay drivers, and drivers for high-power bipolar - 92cs-3780! switching transistors requiring high speed and low gate- drive power. These types can be operated directly from JEDEC TO-204AA integrated circuits. . RFP12N08 . 2 RFP12N10 The REM-series types are supplied in the JEDEC TO- SOURCE 204AA steel package and the RFP-series types in the i JEDEC TO-220AB plastic package. analy DRAIN The REM and RFP series were formerly RCA developmental O ae numbers TA9284 and TA9285. => TOF VIEW GATE 92Cs-39526 JEDEC TO-220AB MAXIMUM RATINGS, Absolute-Maximum Values (Tc=25 Cc): RFM12NO08 RFM12N10 RFP12NG08 RFP12N10 DRAIN-SOURCE VOLTAGE ........5++ Voss 80 100 80 100 Vv DRAIN-GATE VOLTAGE (Rgs=1 MQ)... Voor 80 100 80 100 Vv GATE-SOURCE VOLTAGE .....-...---- Vas +20 Vv DRAIN CURRENT, RMS Continuous ..... tf 12 A Pulsed ..cccecereece low 30 _eAA POWER DISSIPATION @ Tc=25C ......- Pr 75 75 60 60 Ww Derate above Tc=25C 0.6 06 0.48 0.48 wre OPERATING AND STORAGE TEMPERATURE ....csceceereseeee T, Tg -56 to +150 c oN 93875081 GE SOLID STATEOL DEW 3475081 ooausy 3 POF S9-1! - Standard Power MOSFETs RFM12N08, RFM12N10, RFP12N08, RFP12N10 ELECTRICAL CHARACTERISTICS, At Case Temperature (T.)=25 C unless otherwise specified LIMITS TEST RFM12N08 RFM12N10 CHARACTERISTIC SYMBOL CONDITIONS RFP12N08 RFP12N10 UNITS Min. Max. Min. Max. Drain Source Breakdown Voltage BVoss Ip=t mA 80 100 _ Vv Vas=0 Gate-Threshold Voitage Vas(th) Vas=Vos 2 4 2 4 v Ip=1 mA Zero-Gate Voltage Drain Current loss Vog=65 V - 1 -_ _ Vos=80 Vv _ _ _ 1 Tc=125C BA Vos=65 V _ 50 ~ y Vos=80 V _ - _ 50 Gate-Source Leakage Current less Vas=+20 V - 100 _ 100 nA Vos=0 Drain-Source On Voltage Vos(on) Ip=6 A _ 1.2 _ 1.2 Ves=10 Vv Vv Ib=12 A - 3.3 - 3.3 Ves=10 V Static Drain-Source On Resistance fos(on) Ip=6 A _ 0.2 0.2 Q Ves=10 Vv Forward Transconductance One Vos=10 V 2 _ 2 _ mho . [p=6 A Input Capacitance Cis Vos=25 V - 650 _ 650 Output Capacitance Coss Ves=0 V - 300 _ 300 pF Reverse-Transfer Capacitance Cros f = 1MHz - 100 _ 100 . Turn-On Delay Time ta(on) Von=50 V 45(Typ)} 70 |45(Typ)} 70 Rise Time ~ tr lo=6 A 250(Typ)| 375 |250(Typ)| 375 Turn-Off Delay Time ta(off) RoenR=500 [85(Typ)| 130 [85(Typ)| 130 ns Fall Time tt Vas=10 V eo(Typ)| 150 |100(Typy 150 Thermal Resistance Junction-to-Case Rac RFM12N08, nos _ 1.67 _ 1.67 . - RFM12N10 C/W RFP12N08, RFP12N10 2.083 - 2.083 Pulsed: Pulse duration=300 ys max., duty cycle=2%. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS , J LIMITS TEST RFM12N08 RFP12NO08 CHARACTERISTIC SYMBOL | CONDITIONS RFM12N10 RFPI2N1o | UNITS MIN. MAX, MIN. MAX. Diode Forward Voltage Vsp_ ten=6 A _ 1.4 - 1.4 Vv Reverse Recovery Time te die 1100 Als 150(typ) 150(typ) ns *Pulse Test: Width <= 300 us, duty cycle = 2%.3875081 G E SOLID STATE Ou ve Wsazsoa1 0014155 5 i OE 18158) DT SI-/) Standard Power MOSFETs RFM12N08, RFM12N10, RFP12N08, RFP12N10 CASE TEMPERATURE (Tc }= 25C (CURVES MUST BE GERATED LINEARLY WITH INCREASE DRAIN CURRENT (Ip}A s 2 4 686 2 4 6 10 2 100 ORAIN-TO-SOURCE VOLTAGE og -v $2CS- %OSOR1 Fig. 1 - Maximum operating areas for all types. CASE Meise 9206 -34364.A2 Fig. 2 - Power dissipation vs. temperature derating curve for all types. Ips7A Vgg=tO fol La Bs a8 5s ag Rg Sw 23 2 JUNCTION TEMPERATURE 9208-35179 Fig. 4 - Normalized drain-to-source on resistance to junction tem- perature for all types. JUNCTION (yee O2CE-34559 Fig. 3 - Typical normalized gate threshoid voltage as a function of junction temperature for all types. Vg 10 PULSE PULSE ON- STATE DRAIN CURRENT Ip 2 4 6 a GATE- TO-SOURSE VOLTAGE {Vggl- 9208-35169 Fig. & - Typical transfer characteristics for all types. 383875081 GE SOLID STATE Ql pe Wae7soa1 OOLaLSL 7 Pov-39-11 Standard Power MOSFETs RFM12N08, RFM12N10, RFP12N08, RFP12N10 Bvpss | ' ; GATE L SOURCE la 75 VOLTAGE Yoo = Voss Yoo= Yoss fob es 3 3 > > ) 75 osg 0.75 Vp 1 2 0.50 Voss 0.50 Voss: a FL 0.25 Vpss 0 28 Vpsg 4 2 RL= 23930 28 ig (REF) = 0 58 mA L Vas = 10 2 DAAIN SOURCE VOLTAGE Ig (REI * e ach 80 s ach la ft ' TIME Microssconds DRAIH TO SOURCE VOLTAGE (Vogi-v 9208-35155 . s2Ch areas Fig. 6 - Normalized switching waveforms tor constant gate-current Fig. 7 - Typical saturation characteristics for all types. drive. TEST PULSE DURATION *60p8 DUTY CYCLE Ss 2% rm S 4 3S w 8 a S 4 3 DAAIN CURRENT {Xpl-A ezea-95187 10 pnkin- To SouRcE VOLTAGE (vpghev 9205-35156AR1 Fig. 8 - Typical drain-to-source on resistance as a function of Fig. 9 - Capacitance as a function of drain-to-source voltage drain current for ail types. for ail types. Vggttov toa 2 PULSE OURATION i DUTY CYCLE 2% 2 | D & TO SCOPE wu g | | = Yoo ws 2 | i KELVIN 5ov 3 at , CONTACT 3 z | I (Tp H25"C { g | z | t 2 ! I a + 92CS- 37367 . a 2CS-35150 2 3 4 5 & ORAIN CURRENT (Ip)-A Fig. 10 - Typical forward transconductance as @ function of Fig. 11 Switching Time Test Circuit drain current for all types.