FDV301N_NB9V005 - Fairchild Semiconductor

FDV301N

Digital FET , N-Channel

General Description Features

Absolute Maximum Ratings TA = 25oC unless other wise noted

Symbol Parameter FDV301NUnits

VDSS, VCC Drain-Source Voltage, Power Supply Voltage 25 V

VGSS, VIGate-Source Voltage, VIN 8V

ID, IO Drain/Output Current - Continuous 0.22 A

0.5

PDMaximum Power Dissipation 0.35 W

TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C

ESD Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm) 6.0 kV

THERMAL CHARACTERISTICS

RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W

25 V, 0.22 A continuous, 0.5 A Peak.

RDS(ON) = 5 Ω @ VGS= 2.7 V

RDS(ON) = 4 Ω @ VGS= 4.5 V.

Very low level gate drive requirements allowing direct

operation in 3V circuits. VGS(th) < 1.06V.

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Replace multiple NPN digital transistors with one DMOS

FET.

This N-Channel logic level enhancement mode field effect

transistor is produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance. This

device has been designed especially for low voltage

applications as a replacement for digital transistors. Since

bias resistors are not required, this one N-channel FET can

replace several different digital transistors, with different bias

resistor values.

Mark:301

SOT-23 SuperSOTTM-8 SOIC-16

SO-8 SOT-223

SuperSOTTM-6

GND

Vcc

INVERTER APPLICATION

OUT

June 2009

FDV301N Rev.F1

Inverter Electrical Characteristics (TA = 25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

IO (off) Zero Input Voltage Output Current VCC = 20 V, VI = 0 V 1µA

VI (off) Input Voltage VCC = 5 V, IO = 10 µA0.5 V

VI (on) VO = 0.3 V, IO = 0.005 A 1V

RO (on) Output to Ground Resistance VI = 2.7 V, IO = 0.2 A4 5 Ω

Electrical Characteristics (TA = 25 OC unless otherwise noted )

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 25 V

∆BVDSS/∆TJBreakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C25 mV / oC

IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 1µA

TJ = 55°C 10 µA

IGSS Gate - Body Leakage Current VGS = 8 V, VDS= 0 V 100 nA

ON CHARACTERISTICS (Note)

∆VGS(th)/∆TJGate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 o C-2.1 mV / oC

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA0.70 0.85 1.06 V

RDS(ON) Static Drain-Source On-Resistance VGS = 2.7 V, ID = 0.2 A 3.8 5Ω

TJ =125°C 6.3 9

VGS = 4.5 V, ID = 0.4 A 3.1 4

ID(ON) On-State Drain Current VGS = 2.7 V, VDS = 5 V 0.2 A

gFS Forward Transconductance VDS = 5 V, ID= 0.4 A 0.2 S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = 10 V, VGS = 0 V,

f = 1.0 MHz 9.5 pF

Coss Output Capacitance 6 pF

Crss Reverse Transfer Capacitance 1.3 pF

SWITCHING CHARACTERISTICS (Note)

tD(on)Turn - On Delay Time VDD = 6 V, ID = 0.5 A,

VGS = 4.5 V, RGEN = 50 Ω3.2 8ns

trTurn - On Rise Time 6 15 ns

tD(off) Turn - Off Delay Time 3.5 8ns

tfTurn - Off Fall Time 3.5 8ns

QgTotal Gate Charge VDS = 5 V, ID = 0.2 A,

VGS = 4.5 V 0.49 0.7 nC

Qgs Gate-Source Charge 0.22 nC

Qgd Gate-Drain Charge 0.07 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

ISMaximum Continuous Drain-Source Diode Forward Current 0.29 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.29 A (Note)0.8 1.2 V

Note:

Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDV301N Rev.F1

0 0.5 1 1.5 2 2.5 3

0.1

0.2

0.3

0.4

0.5

V , DRAIN-SOURCE VOLTAGE (V)

I , DRAIN-SOURCE CURRENT (A)

3.5

2.7

2.5

V = 4.5V

GS 4.0

2.0

1.5

3.0

0 0.1 0.2 0.3 0.4 0.5

0.6

0.8

1.2

1.4

I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

V = 2.0V

2.7

3.0

4.04.5

3.5

2.5

R DS(on ), NORMALIZED

Typical Electrical Characteristics

Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

-50 -25 0 25 50 75 100 125 150

0.6

0.8

1.2

1.4

1.6

1.8

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

V = 2.7 V

I = 0.2A

R , NORMALIZED

DS(ON)

Figure 3. On-Resistance Variation

with Temperature.

0.5 1 1.5 2 2.5

0.05

0.1

0.15

0.2

V , GATE TO SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

25°C

125°C

V = 5.0V

T = -55°C

Figure 5. Transfer Characteristics.

0.2 0.4 0.6 0.8 11.2

0.0001

0.001

0.01

0.1

0.2

0.5

V , BODY DIODE FORWARD VOLTAGE (V)

I , REVERSE DRAIN CURRENT (A)

T = 125°C

25°C

-55°C

V = 0V

Figure 6. Body Diode Forward Voltage

Variation with Source Current and Temperature.

Figure 4. On Resistance Variation with

Gate-To-Source Voltage.

22.5 33.5 4

V , GATE TO SOURCE VOLTAGE (V)

R , ON-RESISTANCE (OHM)

DS(on)

125°C

25°C

I = 0.2A

FDV301N Rev.F1

00.1 0.2 0.3 0.4 0.5 0.6

Q , GATE CHARGE (nC)

V , GATE-SOURCE VOLTAGE (V)

I = 0.2A

15V

V = 5V

DS 10V

0.5 1 2 5 10 15 25 35

0.01

0.02

0.05

0.1

0.2

0.5

V , DRAI N-SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

100ms

10s

1ms

RDS(ON) LIMIT

V = 2.7V

SINGLE PULSE

R = 357 °C/W

T = 25°C

θJA

0.001 0.01 0.1 1 10 100 300

SINGLE PULSE TIME (SEC)

POWER (W)

SINGLE PULSE

R =357° C/W

T = 25°C

θJA

Figure 10. Single Pulse Maximum Power

Dissipation.

Figure 11. Transient Thermal Response Curve.

0.1 0.5 1 2 5 10 25

V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

iss

f = 1 MHz

V = 0V

oss

rss

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

Typical Electrical And Thermal Characteristics

0.0001 0.001 0.01 0.1 1 10 100 300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

Duty Cycle, D = t /t

1 2

R (t) = r(t) * R

R = 357 °C/W

θJA

T - T = P * R (t)

θJAA

P(pk)

1 t

r(t), NORMALIZED EFFECTIVE

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

www.fairchildsemi.com

FDV301N Rev.F1 3

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intended to be an exh austive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchil d Semiconductor.

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Auto-SPM™

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK®

EfficentMax™

EZSWITCH™ *

™*

Fairchild®

Fairchild Semiconductor®

FACT Quiet Series™

FACT®

FAST®

FastvCore™

FETBench™

FlashWriter® *

FPS™

F-PFS™

FRFET®

Global Power ResourceSM

Green FPS™

Green FPS™ e-Series™

Gmax™

GTO™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

MillerDrive™

MotionMax™

Motion-SPM™

OPTOLOGIC®

OPTOPLANAR®

PDP SPM™

Power-SPM™

PowerTrench®

PowerXS™

Programmable Active Droop™

QFET®

QS™

Quiet Series™

RapidConfigure™

™

Saving our world, 1mW /W /kW at a time™

SmartMax™

SMART START™

SPM®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™

Sync-Lock™®*

The Power Franchise®

TinyBoost™

TinyBuck™

TinyLogic®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

TriFault Detect™

TRUECURRENT™*

µSerDes™

UHC®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Data sheet contains the design specif ications for product development. Specifications

may change in any manner with out notice.

Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconduct or reserves the right to make changes at any ti me without

notice to improve design.

No Identification Neede d Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to impr ove the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

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Rev. I40