TECHNICAL DATA
NPN SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500/495
Devices Qualified Level
2N5793 2N5794
2N5794U
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol Value Units
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 75 Vdc
Emitter-Base Voltage VEBO 6.0 Vdc
Collector Current IC 600 mAdc
One
Section(1)
Total
Device(2)
Total Power Dissipation @ TA = +250C PT 0.5 0.6 W
Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 0C
1) Derate linearly 2.86 mW/0C for TA > +250C
2) Derate linearly 3.43 mW/0C for TA > +250C
TO-78*
6 PIN SURFACE
MOUNT*
*See
MILPRF19500/495 for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc V(BR)CEO 40 Vdc
Collector-Base Cutoff Current
VCB = 75 Vdc
VCB = 50 Vdc
ICBO
10
10
µAdc
ηAdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
VEB = 4.0 Vdc
IEBO
10
10
µAdc
ηAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
42203
Page 1 of 2
2N5793, 2N5794 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 100 µAdc, VCE = 10 Vdc 2N5793
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 300 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 1.0 Vdc
IC = 100 µAdc, VCE = 10 Vdc 2N5794
IC = 1.0 mAdc, VCE = 10 Vdc 2N5794U
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 300 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 1.0 Vdc
hFE
hFE
20
25
35
40
25
20
35
50
75
100
40
50
120
300
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 300 mAdc, IB = 30 mAdc
VCE(sat)
0.3
0.9
Vdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 300 mAdc, IB = 30 mAdc
VBE(sat)
0.6
1.2
1.8
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz hfe 2.0 10
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 8.0 pF
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 33 pF
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 Vdc; IC = 150 mAdc; IB1 = 15 mAdc, VBE(off) = 0.5 Vdc
ton 45
ηs
Turn-Off Time
VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc
toff 310
ηs
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
42203
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