TDA8561Q/N1 - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 1997 Sep 22

File under Integrated Circuits, IC01

1999 Jun 30

INTEGRATED CIRCUITS

TDA8561Q

2× 24 W BTL or 4 × 12 W

single-ended car radio power

amplifier

1999 Jun 30 2

Philips Semiconductors Product speciﬁcation

2× 24 W BTL or 4 × 12 W single-ended

car radio power ampliﬁer TDA8561Q

FEATURES

•Requires very few external components

•High output power

•Flexibility in use; Quad single-ended or stereo BTL

•Low output offset voltage

•Fixed gain

•Diagnostic facility (distortion, short-circuit and

temperature detection)

•Good ripple rejection

•Mode select switch (operating, mute and standby)

•Load dump protection

•AC and DC short-circuit safe to ground and to VP

•Low power dissipation in any short-circuit condition

•Thermally protected

•Reverse polarity safe

•Electrostatic discharge protection

•No switch-on/switch-off plop

•Flexible leads

•Low thermal resistance

•Identical inputs (inverting and non-inverting).

GENERAL DESCRIPTION

The TDA8561Q is an integrated class-B output amplifier in

a 17-lead single-in-line (SIL) power package. It contains

4×12 W Single-Ended (SE) or 2 ×24 W Bridge-Tied

Load (BTL) amplifiers.

The device is primarily developed for car radio

applications.

QUICK REFERENCE DATA

ORDERING INFORMATION

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VPpositive operating supply voltage 6 14.4 18 V

IORM repetitive peak output current −−4A

Ptotal quiescent current −80 −mA

Isb standby current −0.1 100 µA

Stereo BTL application

Pooutput power RL=4Ω; THD = 10% −24 −W

RR supply voltage ripple rejection 46 −−dB

Vno noise output voltage Rs=0Ω−70 −µV

Z

input impedance 25 −−kΩ

∆VO|DC output offset voltage −−150 mV

Quad single-ended application

Pooutput power THD = 10%

RL=4Ω−7−W

=2Ω−12 −W

RR supply voltage ripple rejection 46 −−dB

Vno noise output voltage Rs=0Ω−50 −µV

Z

input impedance 50 −−kΩ

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

TDA8561Q DBS17P plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1

1999 Jun 30 3

Philips Semiconductors Product speciﬁcation

2× 24 W BTL or 4 × 12 W single-ended

car radio power ampliﬁer TDA8561Q

BLOCK DIAGRAM

Fig.1 Block diagram.

mode

select

switch

MEA858 - 1

output 1

15 kΩ

stand-by

switch

mute

switch

stand-by

reference

voltage

513

VP1 VP2

18 kΩ

kΩ

mute switch

power stage

18 kΩ

mute switch

power stage

18 kΩ

mute switch

power stage

18 kΩ

mute switch

power stage

2711

ground

(signal)

GND1 GND2

power ground (substrate)

output 4

output 3

output 2

non-inverting

input 1

non-inverting

input 4 17

TDA8561Q

mute

reference

voltage

input

reference

voltage

kΩ

inverting

input 2 3

PROTECTIONS

thermal

short-circuit

diagnostic

output

supply voltage

ripple rejection

inverting

input 3 15

kΩ

not connected

1999 Jun 30 4

Philips Semiconductors Product speciﬁcation

2× 24 W BTL or 4 × 12 W single-ended

car radio power ampliﬁer TDA8561Q

PINNING

SYMBOL PIN DESCRIPTION

−INV 1 1 non-inverting input 1

GND(S) 2 signal ground

INV 2 3 inverting input 2

RR 4 supply voltage ripple rejection

VP1 5 supply voltage

OUT 1 6 output 1

GND1 7 power ground 1

OUT 2 8 output 2

n.c. 9 not connected

OUT 3 10 output 3

GND2 11 power ground 2

OUT 4 12 output 4

VP2 13 supply voltage

MODE 14 mode select switch input

INV 3 15 inverting input 3

VDIAG 16 diagnostic output

−INV 4 17 non-inverting input 4

Fig.2 Pin configuration.

TDA8561Q

INV 1

GND(S)

INV 2

OUT 1

GND1

OUT 2

n.c.

OUT 3

GND2

OUT 4

MODE

INV 3

DIAG

INV 4

VP1

MEA859 - 1

1999 Jun 30 5

Philips Semiconductors Product speciﬁcation

2× 24 W BTL or 4 × 12 W single-ended

car radio power ampliﬁer TDA8561Q

FUNCTIONAL DESCRIPTION

The TDA8561Q contains four identical amplifiers and can

be used for Single-Ended (SE) or Bridge-Tied Load (BTL)

applications. The gain of each amplifier is fixed at 20 dB

(26 dB in BTL). Special features of the device are:

Mode select switch (pin 14)

•Low standby current (<100 µA)

•Low switching current (low cost supply switch)

•Mute facility.

To avoid switch-on plops, it is advised to keep the amplifier

in the mute mode during ≥100 ms (charging of the input

capacitors at pins 1, 3, 15 and 17). This can be achieved

by:

•Microcontroller control

•External timing circuit (see Fig.11).

Diagnostic output (pin 16)

DYNAMIC DISTORTION DETECTOR (DDD)

At the onset of clipping of one or more output stages, the

dynamic distortion detector becomes active and pin 16

goes LOW. This information can be used to drive a sound

processor or DC volume control to attenuate the input

signal and thus limit the distortion. The output level of

pin 16 is independent of the number of channels that are

clipping (see Figs 3 and 4).

SHORT-CIRCUIT PROTECTION

When a short-circuit occurs at one or more outputs to

ground or to the supply voltage, the output stages are

switched off until the short-circuit is removed and the

device is switched on again, with a delay of approximately

20 ms, after removal of the short-circuit. During this

short-circuit condition, pin 16 is continuously LOW.

When a short-circuit across the load of one or both

channels occurs the output stages are switched off for

approximately 20 ms. After that time it is checked during

approximately 50 µs to see whether the short-circuit is still

present. Due to this duty cycle of 50 µs/20 ms the average

current consumption during this short-circuit condition is

very low (approximately 40 mA).

During this short-circuit condition, pin 16 is LOW for 20 ms

and HIGH for 50 µs (see Fig.5).

The power dissipation in any short-circuit condition is very

low.

Fig.3 Distortion detector waveform; BTL

application.

handbook, halfpage

MGA705

Fig.4 Distortion detector waveform; single-ended

application.

handbook, halfpage

MGA706

V16

1999 Jun 30 6

Philips Semiconductors Product speciﬁcation

2× 24 W BTL or 4 × 12 W single-ended

car radio power ampliﬁer TDA8561Q

TEMPERATURE DETECTION

When the virtual junction temperature Tvj reaches 150 °C, pin 16 will be active LOW.

OPEN-COLLECTOR OUTPUT

Pin 16 is an open-collector output, which allows pin 16 of more devices being tied together.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

vPpositive supply voltage

operating −18 V

non-operating −30 V

load dump protection during 50 ms; tr≥2.5 ms −45 V

IOSM non-repetitive peak output current −6A

ORM repetitive peak output current −4A

stg storage temperature −55 +150 °C

Tamb operating ambient temperature −40 +85 °C

Tvj virtual junction temperature −150 °C

Vpsc AC and DC short-circuit safe voltage −18 V

Vpr reverse polarity −6V

tot total power dissipation −60 W

Fig.5 Short-circuit waveform.

handbook, full pagewidth

MGL214

short-circuit over the load

20 ms

50 µs

current

output

stage

V16

1999 Jun 30 7

Philips Semiconductors Product speciﬁcation

2× 24 W BTL or 4 × 12 W single-ended

car radio power ampliﬁer TDA8561Q

THERMAL CHARACTERISTICS

In accordance with IEC 747-1.

SYMBOL PARAMETER VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air 40 K/W

Rth j-c thermal resistance from junction to case (see Figs 6 and 7) 1.3 K/W

Fig.6 Equivalent thermal resistance network;

BTL application.

handbook, halfpage

2.2 K/W

0.2 K/W

2.2 K/W

virtual junction output 1 output 2

case

MEA861 - 1

Fig.7 Equivalent thermal resistance network;

single-ended application.

handbook, halfpage

3.0 K/W

0.7 K/W

3.0 K/W

virtual junction

output 1 output 2

case

3.0 K/W

0.7 K/W

3.0 K/W

output 3 output 4

MEA860 - 2

0.2 K/W

1999 Jun 30 8

Philips Semiconductors Product speciﬁcation

2× 24 W BTL or 4 × 12 W single-ended

car radio power ampliﬁer TDA8561Q

DC CHARACTERISTICS

VP= 14.4 V; Tamb =25°C; measured in Fig.8; unless otherwise speciﬁed.

Notes

1. The circuit is DC adjusted at VP= 6 to 18 V and AC operating at VP= 8.5 to 18 V.

2. At 18V<V

P< 30 V the DC output voltage ≤0.5VP.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supply

VPpositive supply voltage note 1 6 14.4 18 V

IPtotal quiescent current −80 160 mA

VODC output voltage note 2 −6.9 −V

∆VODC output offset voltage −−150 mV

Mode select switch

Von switch-on voltage level 8.5 −−V

MUTE CONDITION

Vmute mute voltage 3.3 −6.4 V

VOoutput voltage in mute position VImax = 1 V; f = 1 kHz −−2mV

∆VODC output offset voltage (between

pins 6 to 8 and 10 to 12) −−150 mV

STANDBY CONDITION

Vsb standby voltage 0 −2V

sb standby current −−100 µA

Isw switch-on current −12 40 µA

Diagnostic output (pin 16)

VDIAG diagnostic output voltage any short-circuit or clipping −−0.6 V

1999 Jun 30 9

Philips Semiconductors Product speciﬁcation

2× 24 W BTL or 4 × 12 W single-ended

car radio power ampliﬁer TDA8561Q

AC CHARACTERISTICS

VP= 14.4 V; RL=4Ω; f = 1 kHz; Tamb =25°C; unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Stereo BTL application (measured in Fig.8)

Pooutput power note 1

THD = 0.5% 15 19 −W

THD = 10% 20 24 −W

THD total harmonic distortion Po=1W −0.06 −%

Pooutput power VP= 13.2 V

THD = 0.5% −16 −W

THD = 10% −20 −W

B power bandwidth THD = 0.5%; −20 to −Hz

Po=−1 dB; with respect to 15 W 15000

fllow frequency roll-off at −1 dB; note 2 −45 −Hz

fhhigh frequency roll-off at −1dB 20 −−kHz

Gvclosed loop voltage gain 25 26 27 dB

SVRR supply voltage ripple rejection note 3

on 48 −−dB

mute 46 −−dB

standby 80 −−dB

ZIinput impedance 25 30 38 kΩ

Vno noise output voltage

on Rs=0Ω; note 4 −70 −µV

on Rs=10kΩ; note 4 −100 200 µV

mute notes 4 and 5 −60 −µV

cs channel separation Rs=10kΩ40 60 −dB

∆Gvchannel unbalance −−1dB

DYNAMIC DISTORTION DETECTOR

THD total harmonic distortion V16 ≤0.6 V; no short-circuit −10 −%

Quad single-ended application (measured in Fig.9)

Pooutput power note 1

THD = 0.5% 4 5 −W

THD = 10% 5.5 7 −W

THD total harmonic distortion Po=1W −0.06 −%

POoutput power RL=2Ω; note 1

THD = 0.5% 7.5 10 −W

THD = 10% 10 12 −W

fllow frequency roll-off at −1 dB; note 2 −25 −Hz

fhhigh frequency roll-off at −1dB 20 −−kHz

Gvclosed loop voltage gain 19 20 21 dB

1999 Jun 30 10

Philips Semiconductors Product speciﬁcation

2× 24 W BTL or 4 × 12 W single-ended

car radio power ampliﬁer TDA8561Q

Notes

1. Output power is measured directly at the output pins of the IC.

2. Frequency response externally fixed.

3. Ripple rejection measured at the output with a source impedance of 0 Ω, maximum ripple amplitude of 2 V (p-p) and

at a frequency of between 100 Hz and 10 kHz.

4. Noise measured in a bandwidth of 20 Hz to 20 kHz.

5. Noise output voltage independent of Rs (Vi= 0 V).

SVRR supply voltage ripple rejection note 3

on 48 −−dB

mute 46 −−dB

standby 80 −−dB

ZIinput impedance 50 60 75 kΩ

Vno noise output voltage

on Rs=0Ω; note 4 −50 −µV

on Rs=10kΩ; note 4 −70 100 µV

mute notes 4 and 5 −50 −µV

cs channel separation Rs=10kΩ40 60 −dB

∆Gvchannel unbalance −−1dB

DYNAMIC DISTORTION DETECTOR

THD total harmonic distortion V16 ≤0.6 V; no short-circuit −10 −%

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

1999 Jun 30 11

Philips Semiconductors Product speciﬁcation

2× 24 W BTL or 4 × 12 W single-ended

car radio power ampliﬁer TDA8561Q

TEST AND APPLICATION INFORMATION

Fig.8 Stereo BTL application diagram.

handbook, full pagewidth

MEA862 - 2

100

16 5 13

220 nF 16

711

TDA8561Q

TDA8564Q

2200

µF

kΩ

ground (signal)

kΩ

9not connected

inverting input 2

kΩ

reference

voltage

220 nF 17 12

kΩ

non-inverting

input 4

15 10

power ground (substrate)

non- inverting

input 1

supply voltage

ripple rejection

inverting input 3

diagnostic

mode

switch

1999 Jun 30 12

Philips Semiconductors Product speciﬁcation

2× 24 W BTL or 4 × 12 W single-ended

car radio power ampliﬁer TDA8561Q

Fig.9 Quad single-ended application diagram 1.

handbook, full pagewidth

MEA863 - 2

100

16 5 13

220 nF 16

711

TDA8561Q

TDA8564Q

2200

µF

kΩ

ground (signal)

kΩ

9not connected

inverting

input 2 60

kΩ

reference

voltage

220 nF

100

µF

17 12

kΩ

non-inverting

input 4

15 10

power ground (substrate)

non- inverting

input 1

supply voltage

ripple rejection

inverting

input 3

220 nF

1/2Vp

1000 µF

220 nF 1000 µF

1000 µF

mode

switch

1999 Jun 30 13

Philips Semiconductors Product speciﬁcation

2× 24 W BTL or 4 × 12 W single-ended

car radio power ampliﬁer TDA8561Q

Fig.10 Quad single-ended application diagram 2.

(1) When short-circuiting the single-ended capacitor, the dissipation will be reduced due to diode D1.

handbook, full pagewidth

MEA864 - 2

100

16 5 13

220 nF 16

711

TDA8561Q

TDA8564Q

2200

µF

kΩ

ground (signal)

kΩ

not connected

inverting

input 2

kΩ

reference

voltage

220 nF

17 12

kΩ

non-inverting

input 4

15 10

power ground (substrate)

non- inverting

input 1

inverting

input 3 220 nF

220 nF

2200

µF

100

µF

mode

switch

1999 Jun 30 14

Philips Semiconductors Product speciﬁcation

2× 24 W BTL or 4 × 12 W single-ended

car radio power ampliﬁer TDA8561Q

Mode select switch

To avoid switch-on plops, it is advised to keep the amplifier

in the mute mode during >100 ms (charging of the input

capacitors at pins 1, 3, 15 and 17.

The circuit in Fig.11 slowly ramps up the voltage at the

mode select switch pin when switching on and results in

fast muting when switching off.

Fig.11 Mode select switch circuitry.

handbook, halfpage

100 kΩ

MGA708

47 µF

10 kΩ100 Ω

mode

select

switch

Fig.12 Total harmonic distortion as a function of output power; VP= 14.4 V, RL=4Ω.

(1) f = 10 kHz.

(2) f = 1 kHz.

(3) f = 100 Hz.

102

MGA709

10110 1

102

P (W)

10 2

THD

(%)

(1)

(2)

(3)

1999 Jun 30 15

Philips Semiconductors Product speciﬁcation

2× 24 W BTL or 4 × 12 W single-ended

car radio power ampliﬁer TDA8561Q

handbook, full pagewidth

0810121416

MGA710

(W)

V (V)

(1)

(3)

(2)

Fig.13 Output power as a function of supply voltage.

(1) THD = 30%.

(2) THD = 10%.

(3) THD = 0.5%.

Fig.14 Power bandwidth as a function of frequency; THD = 0.5%, VP= 14.4 V, RL=4Ω.

105

MGA711

104

103

102

f (Hz)

(W)

1999 Jun 30 16

Philips Semiconductors Product speciﬁcation

2× 24 W BTL or 4 × 12 W single-ended

car radio power ampliﬁer TDA8561Q

Fig.15 Total harmonic distortion as a function of frequency; VP= 14.4 V, RL=4Ω.

(1) Po= 0.1 W.

(2) Po=1W.

(3) Po=10W.

105

MGA712

104

103

102

10 2f (Hz)

10 1

THD

(%)

(1)

(2)

(3)

100

105

MGA713

104

103

102

f (Hz)

(dB) (1)

(2)

(3)

Fig.16 Ripple rejection as a function of frequency.

(1) On condition.

(2) Mute condition.

(3) Standby condition.

1999 Jun 30 17

Philips Semiconductors Product speciﬁcation

2× 24 W BTL or 4 × 12 W single-ended

car radio power ampliﬁer TDA8561Q

Fig.17 Quiescent current as a function of supply voltage; RL=∞.

handbook, full pagewidth

100

60 8 10121416

MGA714

V (V)

(mA)

SINGLE-ENDED APPLICATION

102

MGA715

10110 1

102

P (W)

10 2

THD

(%)

(2)

(1)

(3)

Fig.18 Total harmonic distortion as a function of output power; VP= 14.4 V, RL=2Ω.

(1) f = 10 kHz. (2) f = 1 kHz. (3) f = 100 Hz.

1999 Jun 30 18

Philips Semiconductors Product speciﬁcation

2× 24 W BTL or 4 × 12 W single-ended

car radio power ampliﬁer TDA8561Q

Fig.19 Output power as a function of supply voltage.

(1) THD = 30%.

(2) THD = 10%.

(3) THD = 0.5%.

handbook, full pagewidth

08 10121416

MGA716

(W)

V (V)

(2)

(3)

(1)

Fig.20 Power bandwidth as a function of frequency; THD = 0.5%, VP= 14.4 V, RL=2Ω.

105

MGA717

104

103

102

f (Hz)

(W)

1999 Jun 30 19

Philips Semiconductors Product speciﬁcation

2× 24 W BTL or 4 × 12 W single-ended

car radio power ampliﬁer TDA8561Q

Fig.21 Total harmonic distortion as a function of frequency; VP= 14.4 V, RL=2Ω.

(1) Po= 0.1 W.

(2) Po=1W.

105

MGA718

104

103

102

10 2f (Hz)

10 1

THD

(%)

(1) (2)

Fig.22 Channel separation as a function of frequency.

handbook, full pagewidth

105

MGA719

104

103

102

f (Hz)

(dB)

αcs

1999 Jun 30 20

Philips Semiconductors Product speciﬁcation

2× 24 W BTL or 4 × 12 W single-ended

car radio power ampliﬁer TDA8561Q

BTL APPLICATION

Fig.23 Total power dissipation as a function of output power; VP= 14.4 V, RL=4Ω(1 channel driven BTL or

4 channels in single-ended mode).

204

MGA720

Ptot

(W)

P (W)

8 1216202428

1999 Jun 30 21

Philips Semiconductors Product speciﬁcation

2× 24 W BTL or 4 × 12 W single-ended

car radio power ampliﬁer TDA8561Q

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

SOT243-1

0 5 10 mm

scale

117

non-concave

95-03-11

97-12-16

DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1

view B: mounting base side

UNIT A e1

A2bpcD

(1) E(1) Z(1)

deD

hLL

mm 17.0

15.5 4.6

4.2 0.75

0.60 0.48

0.38 24.0

23.6 20.0

19.6 10 2.54

0.8

12.2

11.8 1.27

5.08 2.4

1.6

62.00

1.45

2.1

1.8

3.4

3.1 4.3

12.4

11.0

0.4

0.03

1999 Jun 30 22

Philips Semiconductors Product speciﬁcation

2× 24 W BTL or 4 × 12 W single-ended

car radio power ampliﬁer TDA8561Q

SOLDERING

Introduction to soldering through-hole mount

packages

This text gives a brief insight to wave, dip and manual

soldering. A more in-depth account of soldering ICs can be

found in our

“Data Handbook IC26; Integrated Circuit

Packages”

(document order number 9398 652 90011).

Wave soldering is the preferred method for mounting of

through-hole mount IC packages on a printed-circuit

board.

Soldering by dipping or by solder wave

The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact

with the joints for more than 5 seconds.

The total contact time of successive solder waves must not

exceed 5 seconds.

The device may be mounted up to the seating plane, but

the temperature of the plastic body must not exceed the

specified maximum storage temperature (Tstg(max)). If the

printed-circuit board has been pre-heated, forced cooling

may be necessary immediately after soldering to keep the

temperature within the permissible limit.

Manual soldering

Apply the soldering iron (24 V or less) to the lead(s) of the

package, either below the seating plane or not more than

2 mm above it. If the temperature of the soldering iron bit

is less than 300 °C it may remain in contact for up to

10 seconds. If the bit temperature is between

300 and 400 °C, contact may be up to 5 seconds.

Suitability of through-hole mount IC packages for dipping and wave soldering methods

Note

1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

PACKAGE SOLDERING METHOD

DIPPING WAVE

DBS, DIP, HDIP, SDIP, SIL suitable suitable(1)

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1999 Jun 30 23

Philips Semiconductors Product speciﬁcation

2× 24 W BTL or 4 × 12 W single-ended

car radio power ampliﬁer TDA8561Q

NOTES

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

1999 66

Philips Semiconductors – a worldwide company

Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,

Tel. +31 40 27 82785, Fax. +31 40 27 88399

New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,

Tel. +64 9 849 4160, Fax. +64 9 849 7811

Norway: Box 1, Manglerud 0612, OSLO,

Tel. +47 22 74 8000, Fax. +47 22 74 8341

Pakistan: see Singapore

Philippines: Philips Semiconductors Philippines Inc.,

106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,

Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474

Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,

Tel. +48 22 612 2831, Fax. +48 22 612 2327

Portugal: see Spain

Romania: see Italy

Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,

Tel. +7 095 755 6918, Fax. +7 095 755 6919

Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,

Tel. +65 350 2538, Fax. +65 251 6500

Slovakia: see Austria

Slovenia: see Italy

South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,

2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,

Tel. +27 11 471 5401, Fax. +27 11 471 5398

South America: Al. Vicente Pinzon, 173, 6th floor,

04547-130 SÃO PAULO, SP, Brazil,

Tel. +55 11 821 2333, Fax. +55 11 821 2382

Spain: Balmes 22, 08007 BARCELONA,

Tel. +34 93 301 6312, Fax. +34 93 301 4107

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,

Tel. +46 8 5985 2000, Fax. +46 8 5985 2745

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. +41 1 488 2741 Fax. +41 1 488 3263

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,

TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,

Tel. +66 2 745 4090, Fax. +66 2 398 0793

Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,

ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,

252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,

MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,

Tel. +1 800 234 7381, Fax. +1 800 943 0087

Uruguay: see South America

Vietnam: see Singapore

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. +381 11 62 5344, Fax.+381 11 63 5777

For all other countries apply to: Philips Semiconductors,

International Marketing & Sales Communications, Building BE-p, P.O. Box 218,

5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

Argentina: see South America

Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. +61 2 9805 4455, Fax. +61 2 9805 4466

Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,

Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773

Belgium: see The Netherlands

Brazil: see South America

Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,

Tel. +359 2 68 9211, Fax. +359 2 68 9102

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,

Tel. +1 800 234 7381, Fax. +1 800 943 0087

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,

Tel. +852 2319 7888, Fax. +852 2319 7700

Colombia: see South America

Czech Republic: see Austria

Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. +45 33 29 3333, Fax. +45 33 29 3905

Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. +358 9 615 800, Fax. +358 9 6158 0920

France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. +33 1 4099 6161, Fax. +33 1 4099 6427

Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. +49 40 2353 60, Fax. +49 40 2353 6300

Hungary: see Austria

India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,

Tel. +91 22 493 8541, Fax. +91 22 493 0966

Indonesia: PT Philips Development Corporation, Semiconductors Division,

Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,

Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080

Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. +353 1 7640 000, Fax. +353 1 7640 200

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. +39 02 67 52 2531, Fax. +39 02 67 52 2557

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,

TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. +82 2 709 1412, Fax. +82 2 709 1415

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. +60 3 750 5214, Fax. +60 3 757 4880

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087

Middle East: see Italy

Printed in The Netherlands 545002/04/pp24 Date of release: 1999 Jun 30 Document order number: 9397 750 06053