Continental Device India Limited Data Sheet Page 1 of 3
BD135, 137, 139 NPN PLASTIC POWER TRANSISTORS
Complementary BD136, 138, 140
Medium Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGSABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGSABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS 135 137 139
Collector-base voltage (open emitter) VCBO max. 45 60 100 V
Collector-emitter voltage (open base) VCEO max. 45 60 80 V
Collector current ICmax. 1.5 A
Total power dissipation up to TC = 25°C Ptot max. 12.5 W
Junction temperature Tjmax. 150 °C
Collector-emitter saturation voltage
IC = 0.5 A; IB = 0.05 A VCEsat max. 0.5 V
D.C. current gain
IC = 0.15 A; VCE = 2 V hFE min. 40
max. 250
RATINGS RATINGS
RATINGS RATINGS
RATINGS (at TA=25 C unless otherwise specified)
Limiting values 135 137 139
Collector-base voltage (open emitter) VCBO max. 45 60 100 V
Collector-emitter voltage (open base) VCEO max. 45 60 80 V
Emitter-base voltage (open collector) VEBO max. 5.0 V
BD135, BD137, BD139
IS / IECQ C 700000
IS / IECQ C 750100
IS/IS O 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PIN CONFIGURATION
1. EMITTER
2. COLLECTOR
3. BASE
1
3
2
TO-126 (SOT-32) Plastic Package
ALL DIMENSIONS IN MM
Continental Device India Limited Data Sheet Page 2 of 3
BD135, BD137, BD139
Collector current ICmax. 1.5 A
Base current IBmax. 0.5 A
Total power dissipation up to TA = 25°C Ptot max. 1.25 W
Derate above 25°C max 10
mW/°C
Total power dissipation up to TC = 25°C Ptot max. 12.5 W
Derate above 25°C max 100
mW/°C
Junction temperature Tjmax. 150 °C
Storage temperature Tstg –65 to +150
ºC
THERMAL RESISTANCE
From junction to case Rth j–c 10
°C/W
From junction to ambient Rth j–a 100
°C/W
CHARACTERISTICS
Tamb = 25°C unless otherwise specified 135 137 139
Collector cutoff current
IE = 0; VCB = 30 V ICBO max. 0.1 µA
IE = 0; VCB = 30 V; TC = 125°C ICBO max. 10 µA
Emitter cut-off current
IC = 0; VEB = 5 V IEBO max. 10 µA
Breakdown voltages
IC = 0.03 A; IB = 0 VCEO(sus)* min. 45 60 80 V
IC = 1 mA; IE = 0 VCBO min. 45 60 100 V
IE = 1 mA; IC = 0 VEBO min. 5.0 V
Saturation voltage
IC = 0.5 A; IB = 0.05 A VCEsat* max. 0.5 V
Base-emitter on voltage
IC = 0.5A; VCE = 2V VBE(on)* max. 1.0 V
D.C. current gain
IC = 0.005 A; VCE = 2 V* hFE* min. 25
IC = 0.15 A; VCE = 2 V** hFE* min. 40
max. 250
IC = 0.5 A; VCE = 2 V* hFE* min. 25
** hFE classification:–6 min. 40
max. 100
–10 min. 63
max. 160
–16 min. 100
max. 250
–25 min. 160
max. 400
* Pulse test: pulse width ≤ 300 µs, duty cycle ≤ 2%.
Continental Device India Limited Data Sheet Page 3 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited
for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as
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CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India.
Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290
e-mail sales@cdil.com www.cdil.com