© 2011 IXYS All rights reserved 1 - 6
20110505a
MIXA100W1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
Six-Pack
XPT IGBT
VCES = 1200 V
IC25 = 155 A
VCE(sat) = 1.8 V
Pin configuration see outlines.
Features:
• Easy paralleling due to the positive
temperature coefficient of the on-state
voltage
• Rugged XPT design
(Xtreme light Punch Through) results in:
- short circuit rated for 10 µsec.
- very low gate charge
- square RBSOA @ 3x IC
- low EMI
• Thin wafer technology combined with
the XPT design results in a competitive
low VCE(sat)
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
Application:
• AC motor drives
• Solar inverter
• Medical equipment
• Uninterruptible power supply
• Air-conditioning systems
• Welding equipment
• Switched-mode and
resonant-mode power supplies
Package:
• "E3-Pack" standard outline
• Insulated copper base plate
• Soldering pins for PCB mounting
• Temperature sense included
• Optimizes pin layout
Part name (Marking on product)
MIXA100W1200TEH
E72873
9
10
11
12
5
6
7
8
1
2
3
4
NTC
19
20
16, 17, 18
13, 14, 15
27
28
29
24
25
26
21
22
23
30, 31, 32
33, 34, 35
D1 D5
D2 D6D4
D3
T1 T5
T2 T6T4
T3
© 2011 IXYS All rights reserved 2 - 6
20110505a
MIXA100W1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
Ouput Inverter T1 - T6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VCES collector emitter voltage TVJ = 25°C 1200 V
VGES
VGEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
IC25
IC80
collector current TC = 25°C
TC = 80°C
155
108
A
A
Ptot total power dissipation TC = 25°C 500 W
VCE(sat) collector emitter saturation voltage IC = 100 A; VGE = 15 V TVJ = 25°C
TVJ = 125°C
1.8
2.1
2.1 V
V
VGE(th) gate emitter threshold voltage IC = 4 mA; VGE = VCE TVJ = 25°C 5.4 6.0 6.5 V
ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C
TVJ = 125°C
0.03
0.6
0.3 mA
mA
IGES gate emitter leakage current VGE = ±20 V 500 nA
QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 100 A 295 nC
td(on)
tr
td(off)
tf
Eon
Eoff
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load TVJ = 125°C
VCE = 600 V; IC = 100 A
VGE = ±15 V; RG = 7 W
70
40
250
100
8.5
11
ns
ns
ns
ns
mJ
mJ
RBSOA reverse bias safe operating area
V
GE
= ±15 V; R
G
= 7 W;
TVJ = 125°C
VCEK = 1200 V 300 A
SCSOA
tSC
ISC
short circuit safe operating area
short circuit duration
short circuit current
VCE = 900 V; VGE = ±15 V; TVJ = 125°C
RG = 7 W; non-repetitive 400
10 µs
A
RthJC thermal resistance junction to case (per IGBT) 0.25 K/W
Output Inverter D1 - D6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitve reverse voltage TVJ = 25°C 1200 V
IF25
IF80
forward current TC = 25°C
TC = 80°C
135
90
A
A
VFforward voltage IF = 100 A; VGE = 0 V TVJ = 25°C
TVJ = 125°C
1.95
1.95
2.2 V
V
Qrr
IRM
trr
Erec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
VR = 600 V
diF /dt = -1600 A/µs TVJ = 125°C
IF = 100 A; VGE = 0 V
12.5
100
350
4
µC
A
ns
mJ
RthJC thermal resistance junction to case (per diode) 0.4 K/W
TC = 25°C unless otherwise stated
© 2011 IXYS All rights reserved 3 - 6
20110505a
MIXA100W1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
Temperature Sensor NTC
Ratings
Symbol Definitions Conditions min. typ. max. Unit
R25
B25/50
resistance TC = 25°C 4.75 5.0
3375
5.25 kW
K
Module
Ratings
Symbol Definitions Conditions min. typ. max. Unit
TVJ
TVJM
Tstg
operating temperature
max. virtual junction temperature
storage temperature
-40
-40
125
150
125
°C
°C
°C
VISOL isolation voltage IISOL < 1 mA; 50/60 Hz 3000 V~
CTI comparative tracking index 200
Mdmounting torque (M5) 3 6 Nm
dS
dA
creep distance on surface
strike distance through air
10
7.5
mm
mm
Rpin-chip resistance pin to chip 2.5 mW
RthCH thermal resistance case to heatsink with heatsink compound 0.02 K/W
Weight 300 g
Equivalent Circuits for Simulation
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V0
R0
IGBT T1 - T6 TVJ = 150°C 1.1
13.8
V
mW
V0
R0
free wheeling diode D1 - D6 TVJ = 150°C 1.25
8.5
V
mW
I
V
0
R
0
TC = 25°C unless otherwise stated
0 25 50 75 100 125 150
10
100
1000
10000
100000
R
[Ω]
Typ. NTC resistance vs. temperature
TC [°C]
© 2011 IXYS All rights reserved 4 - 6
20110505a
MIXA100W1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
Part number
M = Module
I = IGBT
X = XPT
A = standard
100 = Current Rating [A]
W = Six-Pack
1200 = Reverse Voltage [V]
T = NTC
EH = E3-Pack
Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard MIXA100W1200 TEH MIXA100W1200TEH Box 5 tbd
Circuit Diagram
Outline Drawing Dimensions in mm (1 mm = 0.0394“)
Product Marking
9
10
11
12
5
6
7
8
1
2
3
4
NTC
19
20
16, 17, 18
13, 14, 15
27
28
29
24
25
26
21
22
23
30, 31, 32
33, 34, 35
XXX XX-XXXXX YYCWx
Part name
Date Code
Logo Prod.Index
2D Data Matrix
FOSS-ID 6 digits
© 2011 IXYS All rights reserved 5 - 6
20110505a
MIXA100W1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
Transistor T1 - T6
0123
0
50
100
150
200
0 40 80 120 160 200
0
2
4
6
8
10
12
14
16
18
20
01234
0
50
100
150
200
V
CE
[V]
I
C
[A]
Q
G
[nC]
V
GE
[V]
9 V
11 V
5 6 7 8 9 10 11 12 13
0
20
40
60
80
100
120
140
160
180
200
0 100 200 300 400
0
5
10
15
20
T
VJ
= 125°C
13 V
0 4 8 12 16 20 24
6
8
10
12
14
16
E
[mJ]
E
off
Fig. 1 Typ. output characteristics
V
CE
[V]
I
C
[A]
V
GE
= 15 V
17 V
19 V
Fig. 2 Typ. output characteristics
I
C
[A]
Fig. 3 Typ. tranfer characteristics
V
GE
[V]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. switching energy vs. collector current
E
on
Fig. 6 Typ. switching energy vs. gate resistance
R
G
[Ω]
E
[mJ]
I
C
[A]
E
on
E
off
V
GE
= 15 V
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
I
C
= 100 A
V
CE
= 600 V
R
G
= 6.8 Ω
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
I
C
= 100 A
V
CE
= 600 V
V
GE
= ±15 V
T
VJ
= 125°C
© 2011 IXYS All rights reserved 6 - 6
20110505a
MIXA100W1200TEH
IXYS reserves the right to change limits, test conditions and dimensions.
Inverter D1 - D6
1000 1200 1400 1600 1800 2000 2200
4
8
12
16
20
24
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
50
100
150
200
Q
rr
[µC]
I
F
[A]
V
F
[V] di
F
/dt [A/µs]
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
VR = 600 V
50 A
100 A
200 A
Fig. 7 Typ. Forward current versus V
F
Fig. 8 Typ. reverse recov.charge Q
rr
vs. di/dt
1000 1200 1400 1600 1800 2000 2200
40
60
80
100
120
140
160
I
RM
[A]
di
F
/dt [A/µs]
TVJ = 125°C
VR = 600 V
200 A
50 A
100 A
Fig. 9 Typ. peak reverse current I
RM
vs. di/dt
1000 1200 1400 1600 1800 2000 2200
0
100
200
300
400
500
600
700
t
rr
[ns]
di
F
/dt [A/µs]
200 A
50 A
100 A
TVJ = 125°C
VR = 600 V
Fig. 10 Typ. recovery time t
rr
versus di/dt
Fig. 11 Typ. recovery energy E
rec
versus di/dt
1000 1200 1400 1600 1800 2000 2200
0
2
4
6
8
E
rec
[mJ]
di
F
/dt [A/µs]
TVJ = 125°C
VR = 600 V
200 A
50 A
100 A
0.001 0.01 0.1 1 10
0.01
0.1
1
t
p
[s]
Z
thJC
[K/W]
Fig. 12 Typ. transient thermal impedance
IGBT
Diode
IGBT FRD
RitiRiti
1 0.05 0.002 0.092 0.002
2 0.035 0.03 0.067 0.03
3 0.12 0.03 0.155 0.03
4 0.045 0.08 0.086 0.08
