SIEMENS NPN Silicon Darlington Transistors BSP 50 ... BSP 52 @ High collector current @ Low collector-emitter saturation voltage @ Compiementary types: BSP 60 ... BSP 62 (PNP) ] VPSO5163 Type Marking Ordering Code Pin Configuration | Package (tape and reel) 1 2 3 4 BSP 50 BSP 50 Q62702-P1163 B | cy] E | C |SOT-223 BSP 51 BSP 51 Q62702-P1164 BSP 52 BSP 52 Q62702-P1165 Maximum Ratings Parameter Symbol Values Unit BSP 50 | BSP 51 | BSP 52 Collector-emitter voltage Voce 45 60 80 Vv Collector-base voltage Vepo 60 80 90 Emitter-base voltage Vego 5 Collector current Ic 1 A Peak collector current Tem 2 Base current Is 0.1 Total power dissipation, Ts = 124 C Pron 1.5 WwW Junction temperature Ti 150 Cc Storage temperature range Taig ~ 65... + 150 Thermal Resistance Junction - ambient?) Rihaa <72 KAW Junction - soldering point Rinss <17 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm? Cu. Semiconductor Group 1507 01.97SIEMENS BSP 50 ... BSP 52 Electrical Characteristics at Ta = 25 C, unless otherwise specified. Parameter Symbol Values Unit min. | typ. | max. DC characteristics Collector-emitter breakdown voltage) Ic=10mMA BSP 50 BSP 51 BSP 52 Vipr)cerR 45 60 80 Collector-base breakdown voitage Ie = 100 pA, a = 0 BSP 50 BSP 51 BSP 52 Visr)cBo 60 90 Emitter-base breakdown voltage le = 100 pA, in = 0 VipryEBo 5 Collector-emitter cutoff current Vce = Vcermax, Vaz = 0 Ices 10 LA Emitter-base cutoff current Ves =4V, fc =0 TeBo 10 DC current gain?) ic = 150 mA, Vce = 10 V Ic = 500 mA, Vee = 10 V Are 1000 2000 Collector-emitter saturation voltage?) Ic = 500 mA, fs = 0.5 mA Ie=1A,/e=1MA Veesat Base-emitter saturation voltage?) Ic = 500 mA, Js = 0.5 MA Ico=1A,/a=1mMA Vaesat AC characteristics Transition frequency Ic = 100 mA, Vee = 5 V, f= 100 MHz 200 MHz Switching times Ic = 500 mA, /e1 = fee = 0.5 mA (see diagrams) ton tot 400 1500 ns ns 1) Compare Ree for thermal stability. 2) Puise test conditions: t < 300 ps, D=2 %. Semiconductor Group 1508SIEMENS BSP 50 ... BSP 52 Switching time test circuit t eT Ose. ,<5ns 2.2 100K L-~-- +e Teon=500MA & Toon = !nott =0-5MA Switching time waveform ry 90% ott +Voe 10% - 90% V, 90% out 4 dow { ; } EHNOODOS wd ty elt wd tag bo Semiconductor GroupSIEMENS BSP 50 ... BSP 52 Total power dissipation Pic = f (Ta*; Ts) External resistance Ree = f (Ta)** * Package mounted on epoxy Ves = Voce max * Ree max for thermal stability EHPOOGSS EHPO0660 BSP 50.,.52 6 0.05 50 wo 06C: 150 hak, Permissible pulse load Pict max / Ptoioc = f (fp) EXPOOS43 1 0? BSP 50...52 Q 5 Ree 108 5 10 - 0 50 100 150 _ ] DC current gain Are = f (ic) Vce = 10 V 103 BSP 50...52 EHPOO661 Fiotmr 5 CH 5 tot O HH ie Pee O= 4 3 10 0.005 4.01 5 0.02 0.05 0.1 0.2 7 10 5 HST ene Th 5 ai Ne ate iN tt lil) LOC Se aul Raa, 9 |} i tH TM Bai: = ma 102 1078 yo 10 to 107? =~s 10 10! 102 103 mA 104 ~~ fy I, Semiconductor Group 1510SIEMENS BSP 50 ... BSP 52 Coltector-emitter saturation voltage Ic = f (Vct sat), le-parameter 103 BSP 50...52 EHPOOGES mA I > 10? 0 1 VY 2 * Ver sat Transition frequency ft = f (/c) Vce = 5 V, f= 100 MHz 1 03 B3P 50...52 EHPO0662 f; MHz rol to! 5 10? 5ma10> ~e i, Semiconductor Group Base-emitter saturation voltage Ic = f (Vee sat), fe-parameter 108 BSP 50...52 EHPOOS64 mA b> ,=0.5mA 10? 5 10! 0 1 2 V3 Vor sat 1511