MILITARY APPROVED LOW LEVEL HIGH SPEED SILICON EPITAXIAL JUNCTION NPN SWITCHING TRANSISTORS *2N2432 *2N2432A 2N4438 GEOMETRY 485 ELECTRICAL DATA (ABSOLUTE MAXIMUM RATINGS) PARAMETER SYMBOL | 2N2432/4138 IN2432A UNITS Collector - Emitter Breakdown Voltage BVcEo 30 6 Vv Coltector - Base Breakdown Voltage BVcao 30 45 Vv Emitter - Gase Breakdown Voltaye BVesc 15 18 v Emitter - Cotlector Breakdown Voltage BVeco 15 uy Vv Collector Current Ic 100 mA Power Dissipation (Free Air @ 25C) Po *300 mw Power Dissipation (Case @ 25C! Pc 600 mW Storage Temperature Range Tatg 65C to 200.C [teed Temp. (1/16" From Case! Te 300C for 10 sec. Cotiecter Cennecte@ te Case * Derate linearly to 176, free sir lamperature at ft ** Derate linsarly to 175 C case temperature atthe ELECTRICAL CHARACTERISTICS: Ta = 25C (UNLESS OTHERWISE NOTED) he rate of 2 mW/deg C rete of 4 mW/deg.C 2N2432A 2N2432-2N4138 PARAMETER SYMBOL TEST CONDITIONS MIN MAX. MIN. Max | UNITS Collector - Emitter Braakdown Vottage BVceo | Ic = 10mA, la 0 45 x0 v Collector - Base Breakdown Voltage BVcso | ic = 100A, le = 0 45 x v Emuner - Collector Breakdown Voltage BVeco | le = 100:A. Ie - 0 18 15 v_d Collector to Base Leakage tceo | Vcp + 28V_ te - 0 10 (0 nA Collector to Emitter Leakage ices | Vce = 25v, Vee - 0 10 ae [ona Collector to Emitter Leakage ices | Vee - 26v, Vee. - 0, TA= 128C 250 wo | nA Emitter to Gase Leokege leno | Vea = 15v. Ic =0 2 2 nA Emitter to Collector Leakage lecs | Vec = 18v, Vac 0 2 2 oA Emitter to Collector Leakage lecs Vec 15v, Vee = 0. Ta = 128C 200 200 0.C. Common Emitter hee Vee = 6V, kt = 10nA_ 30 30 Forward Current Transter Ratio hee Vce = SV. Ic = 1mA 50 50 D.C. Common Callector hec Vec = 5V, le < 200uA 3 2 Forward Current Transfer Ratio _4 Collector - Emitter Saturation Voltage Vee lsat) | iB = 0,.5mA, bc = 10mA 0.15 0.15 v4 Offset Vottage Vo Ie = 200uA, le = 0 04 05 mv Offset Voitage Vo te = 1mA, fe = 0 0.7 1.0 mv inverted Dynamic Saturation Resistance Tecisar) | te = imA, be = 100HA, f= TKHzZ 18 20 Ohms Smal) - Signal Common Emitter hwe Vce = 5V, Ic = mA, t= 20MHz 1 Forward Current Transfer Ratio ee a ne Cove | Vee - 0, be = 0,1 = H40kHZ 12 12 | pf Output Capacitance Collector - Base Capacitance Gp Vee = 0, te = 0, f= 1MHz 12 12 pfa Common - Base Open Circunt Coo | Vew~ 0,16 = 0,0 = 140kH2 12 12 | ptd input Capacitance Emitter - Base Capacitance Cen | Ves-0,lc-0,f= MHz 12 12 pid CRYSTALONCS 2805 Veterans Highway Sulte 14 Ronkonkoma, N.Y. 11779SO? oe Aik war eR Iam ee TYPICAL CHARACTERISTICS PNP AND NPN SWITCHING TRANSISTORS fam ne tic ek EET OC ect et 13 alate Vo vaste 0.5 | | Fa = 28C / 0.4 ~03 9 > al O1 o) 03 0.1 0.3 io 30 im (mA) Pecieanvs.le 00 le=0.1x/I0 as f cc Gat) in Otvns 3 8 ss o Ot 03 070.1 0.3 0.71.0 Te{mA) hec and hee vs te 70 6.o $.0 40 3.0 - uw Nermatized Geta Pe sees aa > w wwe eo 01 on 18 10 te (may 1.0 Vo vs Temp. +120 +90 la=1.0mA +60 r0 3 -30 -60 90 -25 0 +50 +75 +400 Temp (C) Paar vs Temp, a 7 Le ta=0.1mA qe "S, 3, le=1.0mA . : es q:! -2 3 25 0 #25 $30 +75 #100 Temp (C) Icao ond tceo vs Temp. 10 J < Ea0 = e 3 10 fA ay 03 on 33 SO 60 7 80 90 100 Temperature (C) CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 . 63