BCP53 PNP General-Purpose Amplifier Description 4 This device is designed for general-purpose mediumpower amplifiers and switching circuits for collector currents to 1.0 A. Sourced from process 79. 3 2 1 SOT-223 1. Base 2,4. Collector 3. Emitter Ordering Information Part Number Marking Package Packing Method BCP53 BCP53 SOT-223 4L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage -80 V VCBO Collector-Base Voltage -100 V VEBO Emitter-Base Voltage -5 V -1.2 A -55 to +150 C IC TJ, TSTG Collector Current - Continuous Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operation. (c) 1997 Fairchild Semiconductor Corporation BCP53 Rev. 1.1.0 www.fairchildsemi.com 1 BCP53 -- PNP General-Purpose Amplifier March 2014 Values are at TA = 25C unless otherwise noted. Symbol PD RJA Parameter Max. Unit Total Device Dissipation 1.5 W Derate Above 25C 12 mW/C 83.3 C/W Thermal Resistance, Junction to Ambient Note: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit BVCEO Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0 -80 V BVCBO Collector-Base Breakdown Voltage IC = -100 A, IE = 0 -100 V BVEBO Emitter-Base Breakdown Voltage IE = -10 A, IC = 0 -5.0 V ICBO Collector-Base Cut-Off Current IEBO Emitter-Base Cut-Off Current VCB = -30 V, IE = 0 -100 nA VCB = -30 V, IE = 0, TA = 125C -10 A VEB = -5.0 V, IC = 0 -10 A IC = -5.0 mA, VCE = -2.0 V hFE DC Current Gain 25 IC = -150 mA, VCE = -2.0 V 40 IC = -500 mA, VCE = -2.0 V 25 250 VCE(sat) Collector-Emitter Saturation Voltage IC = -500 mA, IB = -50 mV -0.5 V VBE(on) Base-Emitter On Voltage IC = -500 mA, VCE = -2.0 V -1.0 V (c) 1997 Fairchild Semiconductor Corporation BCP53 Rev. 1.1.0 www.fairchildsemi.com 2 BCP53 -- PNP General-Purpose Amplifier Thermal Characteristics(3) BCP53 -- PNP General-Purpose Amplifier Physical Dimensions SOT-223 Figure 1. MOLDED PACKAGE, SOT-223, 4 LEAD (ACTIVE) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/MA/MA04A.pdf. For current tape and reel specifications, visit Fairchild Semiconductor's online packaging area: http://www.fairchildsemi.com/packing_dwg/PKG-MA04A_BK.pdf. (c) 1997 Fairchild Semiconductor Corporation BCP53 Rev. 1.1.0 www.fairchildsemi.com 3 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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