
BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor 2SC1623
Document number: BL/SSSTC0018 www.galaxycn.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN
TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 B50 V
Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V
Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA
DC current gain hFE VCE=6V,IC=1mA 90 200 600
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA B 0.3 V
Transition frequency fTVCE=6V, IC= 10mA 250 MHz
CLASSIFICATION OF hFE(1)
Rank L4 L5 L6 L7
Range 90-180 135-270 200-400 300-600
Marking L4 L5 L6 L7