ABSOLUTE MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
SS8550 Unit
Vdc
Vdc
Vdc
Adc
Rating
Characteristics Symbol Min Max Unit
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= -0.1 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0)
Collector Cutoff Current (VCB= -40 Vdc, IE=0 Vdc)
Emitter Cutoff Current(V = -5 Vdc, I =0 Vdc)
1. Pulse Test: Pulse Width 300 us, Duty Cycle 2.0%
<
<
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
I
-5.0
-
-
-
-
-
-0.1
Vdc
Vdc
Vdc
uAdc
uAdc
SS8550
Tstg
PD
C
C
WEITRON
http://www.weitron.com.tw
Plastic-Encapsulate Transistors
PNP Silicon
(Ta=25 C)
-40
-5.0
-1.5
-25
EMITTER
BASE
Total Device Dissipation T =25 C 1.0 W
Junction Temperature Tj150
Storage Temperature -55 to +150
-25
-40
-0.1
EB EBO
A
TO-92
123
1. EMITTER
2. BASE
3. COLLECTOR
COLLECTOR
3
2
1
SS8550=SS8550D
DEVICE MARKING
(1)
C
Transition Frequency
fT
MHz
Collector-Emitter Saturation Voltage
(IC= -800 mAdc, IB= -80 mAdc)
Base-Emitter Saturation Voltage
(IC= -800 mAdc, IB= -80 mAdc)
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
Vdc
Vdc
ON CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol UnitMin Max
-
-
--
-
-
-
100
-
-
SS8550
WEITRON
http://www.weitron.com.tw
(IC= -100 mAdc, VCE=-1.0 Vdc)
(IC= -800 mAdc, VCE= -1.0 Vdc)
85 400
40
-0.5
-1.2
-
Classification of hFE(1)
Rank BCD
Range 85-160 120-200 160-300
E
300-400
TYP
-
DC Current Gain
DC Current Gain
(V =-10V, I =-50mA, f=30 MHz)
CE C
SS8550
WEITRON
http://www.weitron.com.tw
-0.4 -0.8 -1.2 -1.6 -2.0
-0.1
-0.2
-0.3
-0.4
-0.5
IB=-4.0mA
IB=-3.5mA
IB=-3.0mA
IB=-2.5mA
IB=-2.0mA
IB=-1.5mA
IB=-1.0mA
IB=-0.5mA
IC[mA], COLLE CTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-0.1 -1 -10 -100 -1000
1
10
100
1000 VCE = -1V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-0.1 -1 -10 -100 -1000
-10
-100
-1000
-10000
VCE(sat)
VBE(sat)
IC=10IB
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2
-0.1
-1
-10
-100 VCE = -1V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
-1 -10 -100 -1000
1
10
100 f=1MHz
IE=0
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
-1 -10 -100 -1000
10
100
1000 VCE=-10V
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
FIG.1 Static Characteristic FIG.2 DC Current Gain
FIG.3 Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
FIG.4 Base-Emitter On Voltage
FIG.5 Collector Output Capacitance FIG.6 Current Gain Bandwidth Product
WEITRON
http://www.weitron.com.tw
SS8550
Dim
A
B
C
D
E
G
H
J
K
L
Min
3.30
1.10
0.38
0.36
4.40
3.43
4.30
Max
TO-92
TO-92 Outline Dimensions unit:mm
3.70
1.40
0.55
0.51
4.70
-
4.70
2.64
14.50
1.270TYP
E
C
H
A
B
D
L
J
K
G
2.44
14.10
