PDTD113ET,215 - NEXPERIA

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1. Product profile

1.1 General description

500 mA NPN Resistor-Equipped Transistors (RET) family.

[1] Also available in SOT54A and SOT54 variant packages (see Section 2).

1.2 Features

1.3 Applications

1.4 Quick reference data

PDTD113E series

NPN 500 mA, 50 V resistor-equipped transistors;

R1 = 1 kΩ, R2 = 1 kΩ

Rev. 02 — 16 November 2009 Product data sheet

Table 1. Product overview

Type number Package PNP complement

NXP JEITA JEDEC

PDTD113EK SOT346 SC-59A TO-236 PDTB113EK

PDTD113ES[1] SOT54 SC-43A TO-92 PDTB113ES

PDTD113ET SOT23 - TO-236AB PDTB113ET

Built-in bias resistors Reduces component count

Simplifies circuit design Reduces pick and place costs

500 mA output current capability ±10 % resistor ratio tolerance

Digital application in automotive and

industrial segments

Cost saving alternative for BC817 series

in digital applications

Controlling IC inputs Switching loads

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base - - 50 V

IOoutput current (DC) - - 500 mA

R1 bias resistor 1 (input) 0.7 1 1.3 kΩ

R2/R1 bias resistor ratio 0.9 1.0 1.1

Product data sheet Rev. 02 — 16 November 2009 2 of 10

NXP Semiconductors PDTD113E series

NPN 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Symbol

SOT54

1 input (base)

2 output (collector)

3 GND (emitter)

SOT54A

1 input (base)

2 output (collector)

3 GND (emitter)

SOT54 varia nt

1 input (base)

2 output (collector)

3 GND (emitter)

SOT23, SOT346

1 input (base)

2 GND (emitter)

3 output (collector)

001aab34

006aaa145

001aab34

006aaa145

001aab44

006aaa145

006aaa14

sym007

Product data sheet Rev. 02 — 16 November 2009 3 of 10

NXP Semiconductors PDTD113E series

NPN 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

3. Ordering information

[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

Table 4. Orderin g i nformation

Type number Package

Name Description Version

PDTD113EK SC-59A plastic surface mo un te d package ; 3 leads SOT346

PDTD113ES[1] SC-43A plastic single-ended leaded (through hole) package;

3 leads SOT54

PDTD113ET - plastic surface mo un te d package; 3 leads SOT23

Table 5. Marking codes

Type number Marking code[1]

PDTD113EK E1

PDTD113ES D113ES

PDTD113ET *7R

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 50 V

VCEO collector-emitter voltage open base - 50 V

VEBO emitter-base voltage open collector - 10 V

VIinput voltage

positive - +10 V

negative - −10 V

IOoutput curren t (D C ) - 500 mA

Ptot total power dissipation Tamb ≤25 °C[1]

SOT346 - 250 mW

SOT54 - 500 mW

SOT23 - 250 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Product data sheet Rev. 02 — 16 November 2009 4 of 10

NXP Semiconductors PDTD113E series

NPN 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7. Characteristics

Table 7. Thermal characteris tics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1]

SOT346 - - 500 K/W

SOT54 - - 250 K/W

SOT23 - - 500 K/W

Table 8. Characteristics

Tamb =25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off

current VCB =40V; I

E= 0 A - - 100 nA

VCB =50V; I

E= 0 A - - 100 nA

ICEO collector-emitter

cut-off current VCE =50V; I

B=0A - - 0.5 μA

IEBO emitter-base cut-off

current VEB =5V; I

C=0A - - 4 mA

hFE DC current gain VCE =5V; I

C=50mA 33 - -

VCEsat collector-emitter

saturation voltage IC=50mA; I

B=2.5mA - - 0.3 V

VI(off) off-state input voltage VCE =5V; I

C= 100 μA 0.6 1.1 1.5 V

VI(on) on-state input voltage VCE =0.3V; I

C= 20 mA 1.0 1.4 1.8 V

R1 bias resistor 1 (input) 0.7 1 1.3 kΩ

R2/R1 bias resistor ratio 0.9 1 1.1

Cccollector capacitance VCB =10V; I

E=i

e=0A;

f=100MHz -7-pF

Product data sheet Rev. 02 — 16 November 2009 5 of 10

NXP Semiconductors PDTD113E series

NPN 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

VCE = 5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

Fig 1. DC current gain as a function of collector

current; typical values Fig 2. Collector- em itter satura tio n voltage as a

function of collector current; typical values

VCE = 0.3 V

(1) Tamb = −40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

VCE = 5 V

(1) Tamb = −40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig 3. On-state input voltage as a function of

collector current; typical values Fig 4. Off-state input voltage as a function of

collector current; typical values

006aaa310

102

103

hFE

10−1

IC (mA)

10−1103

102

110

(1)

(2)

(3)

006aaa311

IC (mA)

10 103

102

10−1

VCEsat

(V)

10−2

(1)

(2)

(3)

006aaa312

IC (mA)

10−1103

102

110

VI(on)

(V)

10−1

(1)

(2)

(3)

IC (mA)

10−1101

006aaa313

VI(off)

(V)

10−1

(1)

(2)

(3)

Product data sheet Rev. 02 — 16 November 2009 6 of 10

NXP Semiconductors PDTD113E series

NPN 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

8. Package outline

Fig 5. Package outline SOT346 (SC-59A/TO-236) Fig 6. Package outline SOT54 (SC-43A/TO-92)

Fig 7. Pac kage outline SOT54A Fig 8. Pa ckage outline SOT54 variant

Fig 9. Package outline SOT23 (TO-236AB)

04-11-11Dimensions in mm

3.0

2.5

1.7

1.3

0.26

0.10

1.9

0.50

0.35

1.3

1.0

3.1

2.7

0.6

0.2

04-11-16Dimensions in mm

5.2

5.0

14.5

12.7

4.8

4.4

4.2

3.6

0.45

0.38

0.48

0.40

1.27

2.54

04-06-28Dimensions in mm

5.2

5.0

14.5

12.7

4.8

4.4

4.2

3.6

0.45

0.38

0.48

0.40

2.54

5.08

3 max

05-01-10Dimensions in mm

5.2

5.0

14.5

12.7

4.8

4.4

4.2

3.6

0.45

0.38

0.48

0.40

1.27

2.54

2.5

max

04-11-04Dimensions in mm

0.45

0.15

1.9

1.1

0.9

3.0

2.8

2.5

2.1

1.4

1.2

0.48

0.38

0.15

0.09

Product data sheet Rev. 02 — 16 November 2009 7 of 10

NXP Semiconductors PDTD113E series

NPN 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

9. Packing information

[1] For further information and the availability of packing methods, see Section 12.

Table 9. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing qu antity

3000 5000 10000

PDTD113EK SOT346 4 mm pitch, 8 mm tape and reel -115 - -135

PDTD113ES SOT54 bulk, straight leads - -412 -

SOT54A tape and reel, wide pitch - - -116

tape ammopack, wide pitch - - -126

SOT54 variant bulk, delta pinning - -112 -

PDTD113ET S OT23 4 mm pitch, 8 mm tape and reel -215 - -235

Product data sheet Rev. 02 — 16 November 2009 8 of 10

NXP Semiconductors PDTD113E series

NPN 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

10. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PDTD113E_SER_2 20091116 Product data sheet - PDTD113E_SER_1

Modifications: •This data sheet was changed to reflec t the new company name NXP Semiconductors,

including new legal definitions and disclaimers. No changes were made to the technical

content.

PDTD113E_SER_1 20050414 Product data sheet - -

Product data sheet Rev. 02 — 16 November 2009 9 of 10

NXP Semiconductors PDTD113E series

NPN 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

11. Legal information

11.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warrant ies as to t he accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short dat a sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsisten cy or conflict with the short dat a sheet, the

full data sheet shall pre va il.

11.3 Disclaimers

General — In formation in this document is believed to be accurate and

reliable. However, NXP Semiconductors does no t give any representa tions or

warranties, expressed or impli ed, as to the accuracy or completeness of such

information and shall have no liability for th e co nsequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descripti ons, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environment al

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for il lustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ra tings System of IEC 60134) may cause permane nt

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other co nditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may af fect device reliability.

Terms and conditions of sale — NXP Semiconductors product s are sold

subject to the general terms and conditions of commercia l sal e, as published

at http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conflict between inf ormation in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Not hing in this document may be interpret ed or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

11.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respective ow ners.

12. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an em ail to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specificat ion.

Product [short] data sheet Production This document contains the product specifica tion.

NXP Semiconductors PDTD113E series

NPN 500 mA resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of rele ase: 16 November 2009

Document identifier: PDTD113E_SER_2

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6

9 Packing information . . . . . . . . . . . . . . . . . . . . . 7

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Contact information. . . . . . . . . . . . . . . . . . . . . . 9

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10