DGK D P
SN65HVD3082E, SN75HVD3082E
SN65HVD3085E, SH65HVD3088E
www.ti.com
SLLS562G –AUGUST 2009–REVISED MAY 2009
Low-Power RS-485 Transceivers, Available in a Small MSOP-8
Package
1FEATURES DESCRIPTION
• Available in a Small MSOP-8 Package These devices are half-duplex transceivers designed
• Meets or Exceeds the Requirements of the for RS–485 data bus networks. Powered by a 5–V
TIA/EIA−485A Standard supply, they are fully compliant with TIA/EIA-485A
• Low Quiescent Power standard. With controlled transition times, these
devices are suitable for transmitting data over long
– 0.3 mA Active Mode twisted-pair cables. SN65HVD3082E and
– 1 nA Shutdown Mode SN75HVD3082E devices are optimized for signaling
• 1/8 Unit Load—Up to 256 Nodes on a Bus rates up to 200 kbps. SN65HVD3085E is suitable for
data transmission up to 1 Mbps, whereas
• Bus-Pin ESD Protection Up to 15 kV SN65HVD3088E is suitable for applications requiring
• Industry-Standard SN75176 Footprint signaling rates up to 20 Mbps. These devices are
• Failsafe Receiver (Bus Open, Bus Shorted, designed to operate with very low supply current,
Bus Idle) typically 0.3 mA, exclusive of the load. When in the
inactive shutdown mode, the supply current drops to
• Glitch–Free Power–Up/Down Bus Inputs and a few nanoamps, making these devices ideal for
Outputs power-sensitive applications.
APPLICATIONS The wide common-mode range and high ESD
protection levels of these devices make them suitable
• Energy Meter Networks for demanding applications such as energy meter
• Motor Control networks, electrical inverters, status/command signals
• Power Inverters across telecom racks, cabled chassis interconnects,
and industrial automation networks where noise
• Industrial Automation tolerance is essential. These devices match the
• Building Automation Networks industry-standard footprint of SN75176. Power-on
• Battery-Powered Applications reset circuits keep the outputs in a high impedance
state until the supply voltage has stabilized. A thermal
• Telecommunications Equipment shutdown function protects the device from damage
due to system fault conditions. The SN75HVD3082E
is characterized for operation from 0°C to 70°C and
SN65HVD308xE are characterized for operation from
–40°C to 85°C air temperature.
ORDERING INFORMATION:
PACKAGE TYPE
TASIGNALING RATE (Mbps) P D(1) DGK(2)
SN75HVD3082EP SN75HVD3082ED SN75HVD3082EDGK
0°C to 70°C 0.2 Marked as 75HVD3082 Marked as VN3082 Marked as NWM
SN65HVD3082EP SN65HVD3082ED SN65HVD3082EDGK
0.2 Marked as 65HVD3082 Marked as VP3082 Marked as NWN
SN65HVD3085ED SN65HVD3085EDGK
–40°C to 85°C 1 Marked as VP3085 Marked as NWK
SN65HVD3088ED SN65HVD3088EDGK
20 Marked as VP3088 Marked as NWH
(1) The D package is available taped and reeled. Add an R suffix to the device type (i.e., SN65HVD3082EDR).
(2) The DGK package is available taped and reeled. Add an R suffix to the device type (i.e., SN65HVD3082EDGKR).
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date. Copyright © 2009, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
SN65HVD3082E, SN75HVD3082E
SN65HVD3085E, SH65HVD3088E
SLLS562G –AUGUST 2009–REVISED MAY 2009
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted(1) (2)
UNIT
Supply voltage range, VCC –0.5 V to 7 V
Voltage range at A or B –9 V to 14 V
Voltage range at any logic pin –0.3 V to VCC + 0.3 V
Receiver output current –24 mA to 24 mA
Voltage input, transient pulse, A and B, through 100 Ω. See Figure 13 –50 to 50 V
Junction Temperature, TJ170°C
Continuous total power dissipation See the Package Dissipation Table
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential I/O bus voltages, are with respect to network ground terminal.
PACKAGE DISSIPATION RATINGS
JEDEC BOARD TA< 25°C DERATING FACTOR (1) TA= 70°C TA= 85°C
PACKAGE ABOVE TA= 25°C POWER RATING POWER RATING
MODEL POWER RATING
Low k(2) 507 mW 4.82 mW/°C 289 mW 217 mW
DHigh k(3) 824 mW 7.85 mW/°C 471 mW 353 mW
P Low k(2) 686 mW 6.53 mW/°C 392 mW 294 mW
Low k(2) 394 mW 3.76 mW/°C 255 mW 169 mW
DGK High k(3) 583 mW 5.55 mW/°C 333 mW 250 mW
(1) This is the inverse of the junction-to-ambient thermal resistance when board-mounted and with no air flow.
(2) In accordance with the low-k thermal metric definitions of EIA/JESD51-3
(3) In accordance with the high-k thermal metric definitions of EIA/JESD51-7
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SN65HVD3082E, SN75HVD3082E
SN65HVD3085E, SH65HVD3088E
www.ti.com
SLLS562G –AUGUST 2009–REVISED MAY 2009
RECOMMENDED OPERATING CONDITIONS(1)
over operating free-air temperature range unless otherwise noted MIN NOM MAX UNIT
Supply voltage, VCC 4.5 5.5 V
Voltage at any bus terminal (separately or common mode) , VI–7 12
High-level input voltage (D, DE, or RE inputs), VIH 2 VCC V
Low-level input voltage (D, DE, or RE inputs), VIL 0 0.8 V
Differential input voltage, VID –12 12 V
Driver –60 60
Output current, IOmA
Receiver –8 8
Differential load resistance, RL54 60 Ω
SN65HVD3082E, SN75HVD3082E 0.2
Signaling rate, 1/tUI SN65HVD3085E 1 Mbps
SN65HVD3088E 20
SN65HVD3082E, SN65HVD3085E, SN65HVD3088E –40 85
Operating free–air temperature, TA°C
SN75HVD3082E 0 70
Junction temperature, TJ(2) –40 130 °C
(1) The algebraic convention, in which the least positive (most negative) limit is designated as minimum is used in this data sheet.
(2) See thermal characteristics table for information on maintenance of this specification for the DGK package.
SUPPLY CURRENT
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
D at VCC or open, DE at VCC,
Driver and receiver enabled 425 900 µA
RE at 0 V, No load
D at VCC or open, DE at VCC,
Driver enabled, receiver disabled 330 600 µA
RE at VCC, No load
ICC D at VCC or open, DE at 0 V,
Receiver enabled, driver disabled 300 600 µA
RE at 0 V, No load
D at VCC or open, DE at 0 V,
Driver and receiver disabled 0.001 2 µA
RE at VCC
(1) All typical values are at 25°C and with a 5–V supply.
ELECTROSTATIC DISCHARGE PROTECTION
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
Human body model Bus terminals and GND ±15 kV
Human body model(2) All pins ±4 kV
Charged-device-model(3) All pins ±1 kV
Electrical Fast Transient/Burst(4) A, B, and GND ±4 kV
(1) All typical values at 25°C.
(2) Tested in accordance with JEDEC Standard 22, Test Method A114–A and IEC 60749–26.
(3) Tested in accordance with JEDEC Standard 22, Test Method C101.
(4) Tested in accordance with IEC 61000–4–4.
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SN65HVD3082E, SN75HVD3082E
SN65HVD3085E, SH65HVD3088E
SLLS562G –AUGUST 2009–REVISED MAY 2009
www.ti.com
DRIVER ELECTRICAL CHARACTERISTICS
over recommended operating conditions unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
IO= 0, No Load 3 4.3
RL= 54 Ω, See Figure 1 1.5 2.3
|VOD| Differential output voltage V
RL= 100 Ω2
VTEST = –7 V to 12 V, See Figure 2 1.5
Change in magnitude of differential
Δ|VOD| See Figure 1 and Figure 2 –0.2 0 0.2 V
output voltage
Steady-state common-mode output
VOC(SS) 1 2.6 3
voltage See Figure 3 V
Change in steady-state common-mode
ΔVOC(SS) –0.1 0 0.1
output voltage
Peak-to-peak common-mode output
VOC(PP) See Figure 3 500 mV
voltage
IOZ High-impedance output current See receiver input currents
IIInput current D, DE –100 100 µA
IOS Short-circuit output current −7 V ≤VO≤12 V, See Figure 7 –250 250 mA
(1) All typical values are at 25°C and with a 5–V supply.
DRIVER SWITCHING CHARACTERISTICS
over recommended operating conditions unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Propagation delay time, low-to-high-level HVD3082E 700 1300
tPLH output RL= 54 Ω, CL= 50 pF, HVD3085E 150 500 ns
tPHL Propagation delay time, high-to-low-level See Figure 4 HVD3088E 12 20
output HVD3082E 500 900 1500
trDifferential output signal rise time RL= 54 Ω, CL= 50 pF, HVD3085E 200 300 ns
tfDifferential output signal fall time See Figure 4 HVD3088E 7 15
HVD3082E 20 200
RL= 54 Ω, CL= 50 pF,
tsk(p) Pulse skew (|tPHL – tPLH|) HVD3085E 5 50 ns
See Figure 4 HVD3088E 1.4 2
Propagation delay time, high-impedance-to- HVD3082E 2500 7000
RL= 110 Ω, RE at 0 V,
tPZH high-level output HVD3085E 1000 2500
See Figure 5 and ns
tPZL Propagation delay time, high-impedance-to- Figure 6 HVD3088E 13 30
low-level output
Propagation delay time, high-level-to-high- HVD3082E 80 200
RL= 110 Ω, RE at 0 V,
tPHZ impedance output HVD3085E 60 100
See Figure 5 and ns
tPLZ Propagation delay time, low-level-to-high- Figure 6 HVD3088E 12 30
impedance output
Propagation delay time, shutdown-to-high- HVD3082E 3500 7000
tPZH(SHDN) level output RL= 110 Ω, RE at VCC,HVD3085E 2500 4500 ns
tPZL(SHDN) Propagation delay time, shutdown-to-low- See Figure 5 HVD3088E 1600 2600
level output
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SN65HVD3082E, SN75HVD3082E
SN65HVD3085E, SH65HVD3088E
www.ti.com
SLLS562G –AUGUST 2009–REVISED MAY 2009
RECEIVER ELECTRICAL CHARACTERISTICS
over recommended operating conditions unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
Positive-going differential input threshold
VIT+ IO= –8 mA –85 –10 mV
voltage
Negative-going differential input threshold
VIT- IO= 8 mA –200 –115 mV
voltage
Vhys Hysteresis voltage (VIT+ - VIT-) 30 mV
VOH High-level output voltage VID = 200 mV, IOH = –8 mA, See Figure 8 4 4.6 V
VOL Low-level output voltage VID = –200 mV, IO= 8 mA, See Figure 8 0.15 0.4 V
IOZ High-impedance-state output current VO= 0 or VCC, RE = VCC –1 1 μA
VIH = 12 V, VCC = 5 V 0.04 0.1
VIH = 12 V, VCC = 0 V 0.06 0.125
IIBus input current mA
VIH = –7 V, VCC = 5 V –0.1 –0.04
VIH = –7 V, VCC = 0 V –0.05 –0.03
IIH High-level input current, (RE) VIH = 2 V –60 –30 μA
IIL Low-level Input current, (RE) VIL = 0.8 V –60 –30 μA
Cdiff Differential input capacitance VI= 0.4 sin (4E6πt) + 0.5 V, DE at 0 V 7 pF
(1) All typical values are at 25°C and with a 5-V supply.
RECEIVER SWITCHING CHARACTERISTICS
over recommended operating conditions unless otherwise noted
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
HVD3082E 75 200
Propagation delay time, low-to-high- HVD3085E
tPLH ns
level output HVD3086E 100
HVD3082E 79 200
Propagation delay time, high-to-low- CL= 15 pF, See HVD3085E
tPHL ns
level output Figure 9 HVD3088E 100
HVD3082E 4 30
HVD3085E
tsk(p) Pulse skew (|tPHL – tPLH|) ns
HVD3088E 10
trOutput signal rise time 1.5 3 ns
VID = –1.5 V to 1.5 V,
CL= 15 pF, See Figure 9
tfOutput signal fall time 1.8 3 ns
HVD3082E 5 50
HVD3085E
tPZH Output enable time to high level ns
HVD3088E 30
HVD3082E 10 50
HVD3085E
tPZL Output enable time to low level ns
CL= 15 pF, HVD3088E 30
DE at 3 V
See Figure 10 and HVD3082E 5 50
Figure 11 HVD3085E
tPHZ Output enable time from high level ns
HVD3088E 30
HVD3082E 8 50
HVD3085E
tPLZ Output disable time from low level ns
HVD3088E 30
Propagation delay time, shutdown-to-
tPZH(SHDN) 1600 3500 ns
high-level output CL= 15 pF, DE at 0 V,
See Figure 12
Propagation delay time, shutdown-to-low-
tPZL(SHDN) 1700 3500 ns
level output
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Product Folder Link(s): SN65HVD3082E SN75HVD3082E SN65HVD3085E SH65HVD3088E
0Vor3V 50pF
27 W
BIOB
VOD
VOC
IOA
IIA27 W
0Vor3V 60 W
375 W
IOB
VOD
IOA
VTEST =-7Vto12V
375 W
VTEST
-1.75V
50 W
Signal
Generator VOC
VOC
DVOC(SS)
50pF
27 W
B
VB
A
27 W
VA-3.25V
VOC(PP)
1.5V
50 W
Output VOD(L)
tPLH
tf
C =50pF
L
R =50
LW
Signal
Generator
0V
0V
10%
VOD
Input 1.5V
3V
VOD(H)
90%
tPHL
tr
SN65HVD3082E, SN75HVD3082E
SN65HVD3085E, SH65HVD3088E
SLLS562G –AUGUST 2009–REVISED MAY 2009
www.ti.com
PARAMETER MEASUREMENT INFORMATION
NOTE: Test load capacitance includes probe and jig capacitance (unless otherwise specified). Signal generator
characteristics: rise and fall time < 6 ns, pulse rate 100 kHz, 50% duty cycle. ZO= 50 Ω(unless otherwise
specified).
Figure 1. Driver Test Circuit, VOD and VOC Without Common-Mode Loading
Figure 2. Driver Test Circuit, VOD With Common-Mode Loading
Figure 3. Driver VOC Test Circuit and Waveforms
Figure 4. Driver Switching Test Circuit and Waveforms
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V 0
Off
Signal
Generator 50 W
R =110
LW
C =50pF
L
S1
0Vor3V
3VifTesting A Output
0 VifTestingBOutput
B
D
A
DE
Output
1.5V
DE
Output
3V
tPHZ
VOH
0V
2.5V
1.5V
tPZH 0.5V
1.5V
R =110
LW
Signal
Generator
5V
S1
DE
0Vor3V
0VifTesting A Output
3 VifTestingBOutput
2.5V
D
DE
Output 1.5V
tPLZ
0.5V
50 W
C =50pF
L
B
A3V
5V
0V
VOL
Output
tPZL
VID
IO
VO
50 WC =15pF
L
Input A
1.5V
B
VID
Signal
Generator
Signal
Generator
A
R
tPHL
0V
VOL
IO
VO
50 W
Output
InputB
VOH
10%
tPLH
tf
50%
90%
tr
SN65HVD3082E, SN75HVD3082E
SN65HVD3085E, SH65HVD3088E
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SLLS562G –AUGUST 2009–REVISED MAY 2009
PARAMETER MEASUREMENT INFORMATION (continued)
Figure 5. Driver Enable/Disable Test Circuit and Waveforms, High Output
Figure 6. Driver Enable/Disable Test Circuit and Waveforms, Low Output
Figure 8. Receiver Switching Test Circuit and
Waveforms
Figure 7. Driver Short-Circuit
Figure 9. Receiver Switching Test Circuit and Waveforms
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Product Folder Link(s): SN65HVD3082E SN75HVD3082E SN65HVD3085E SH65HVD3088E
50 W
54 W
A
RE
Signal
Generator
B
VCC DE
VCC D
1kW
C =15pF
L
0V
R
1.5V
GND
tPHZ
V -0.5V
OH
0V
R
RE 1.5V
3V
VOH
tPZH
54 W
VCC
tPLZ
V +0.5V
OH
5V
R
A
DE
VOL
Signal
Generator
B
0V D
50 W
RE
1kW
C =15pF
L
R
RE
0V
3V
VCC
1.5V
1.5V
tPZL
1.5V
50 W
1kW
C =15pF
L
SwitchDownforV =1.5V
(A)
SwitchUpforV =-1.5V
(A)
Signal
Generator
0V
R
R
A
RE
RE 1.5V
1.5Vor
-1.5V 3V
B
tPZH(SHDN)
tPZL(SHDN)
VCC
VOL
VOH
0V
5V
SN65HVD3082E, SN75HVD3082E
SN65HVD3085E, SH65HVD3088E
SLLS562G –AUGUST 2009–REVISED MAY 2009
www.ti.com
PARAMETER MEASUREMENT INFORMATION (continued)
Figure 10. Receiver Enable/Disable Test Circuit and Waveforms, Data Output High
Figure 11. Receiver Enable/Disable Test Circuit and Waveforms, Data Output Low
Figure 12. Receiver Enable From Shutdown Test Circuit and Waveforms
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100 W
0V
PulseGenerator,
15 sDuration,
1%DutyCycle
m-VTEST
VTEST
15ms15 sm
DE
RE
8
D 5
6
7
RVCC
GND
1
4
3
2
A
B
7
6
DE
RE
1
D4
3
2
R
B
A
SN65HVD3082E, SN75HVD3082E
SN65HVD3085E, SH65HVD3088E
www.ti.com
SLLS562G –AUGUST 2009–REVISED MAY 2009
PARAMETER MEASUREMENT INFORMATION (continued)
Figure 13. Test Circuit and Waveforms, Transient Overvoltage Test
DEVICE INFORMATION
PIN ASSIGNMENT LOGIC DIAGRAM (POSITIVE LOGIC)
D, P OR DGK PACKAGE
(TOP VIEW)
FUNCTION TABLE
DRIVER RECEIVER
OUTPUTS
INPUT INPUT DIFFERENTIAL INPUTS ENABLE OUTPUT
D DE VID = VA- VBRE R
A B
H H H L VID ≤–0.2 V L L
L H L H –0.2 V < VID < –0.01 V L ?
X L Z Z –0.01 V ≤VID L H
Open H H L X H Z
X Open Z Z Open circuit L H
Short circuit L H
IDLE Bus L H
X Open Z
Receiver Failsafe
The differential receiver is “failsafe” to invalid bus states caused by:
• open bus conditions such as a disconnected connector,
• shorted bus conditions such as cable damage shorting the twisted-pair together, or
• idle bus conditions that occur when no driver on the bus is actively driving
In any of these cases, the differential receiver outputs a failsafe logic High state, so that the output of the
receiver is not indeterminate.
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500 W
16 V
Input
D and RE Input
500 W
9 V
VCC
Input
R Output
50 kW
50 kW
180 kW
36 kW
VCC
DE Input
A and B Output
VCC
VCC
Input
Output
9 V
9 V
16 V
36 kW
16 V
5W
16 V
36 kW
B InputA Input
VCC
16 V
16 V
Input
VCC
Output
180 kW
36 kW
SN65HVD3082E, SN75HVD3082E
SN65HVD3085E, SH65HVD3088E
SLLS562G –AUGUST 2009–REVISED MAY 2009
www.ti.com
Receiver failsafe is accomplished by offsetting the receiver thresholds so that the “input indeterminate” range
does not include zero volts differential. To comply with the RS-422 and RS-485 standards, the receiver output
must output a High when the differential input VID is more positive than +200 mV, and must output a Low when
the VID is more negative than -200 mV. The receiver parameters which determine the failsafe performance are
VIT+ and VIT-and VHYS. As seen in the RECEIVER ELECTRICAL CHARACTERISTICS table, differential signals
more negative than -200 mV will always cause a Low receiver output. Similarly, differential signals more positive
than +200 mV will always cause a High receiver output.
When the differential input signal is close to zero, it will still be above the VIT+ threshold, and the receiver output
is High. Only when the differential input is more negative than VIT-will the receiver output transition to a Low state.
So, the noise immunity of the receiver inputs during a bus fault condition includes the receiver hysteresis value
VHYS (the separation between VIT+ and VIT-) as well as the value of VIT+.
EQUIVALENT INPUT AND OUTPUT SCHEMATIC DIAGRAMS
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ReceiverOnly
DriverandReceiver
NoLoad,
V =5V,
T =25 C
50%SquareWaveInput
CC
A
o
100
SignalRate-kbps
1 10
0.1
ICC -SupplyCurrent-mA
1
10
-60
-40
-20
0
20
40
60
-8 -6 -4 -2 0 2 4 6 8 12
VCC =5V
VCC =0V
VI-BusInputVoltage-V
II-InputBiasCurrent- Am
80
10
SN65HVD3082E, SN75HVD3082E
SN65HVD3085E, SH65HVD3088E
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SLLS562G –AUGUST 2009–REVISED MAY 2009
PACKAGE THERMAL INFORMATION
PARAMETER TEST CONDITIONS PACKAGE MIN TYP MAX UNIT
MOSP (DGK) 266
Low-k board, no air flow SOIC (D) 210 °C/W
PDIP (P) 155
Junction-to-ambient
θJA thermal resistance MOSP (DGK) 180
High-k board, no air flow SOIC (D) 130 °C/W
PDIP (P) 70
MOSP (DGK) 110
Junction-to-board
θJB Low-k board, no air flow SOIC (D) 55 °C/W
thermal resistance PDIP (P) 40
MOSP (DGK) 66
Junction-to-case
θJC SOIC (D) 80 °C/W
thermal resistance PDIP (P) 80
Input to D is a 50% duty ALL HVD3082E 203
cycle square wave at max ALL HVD3085E 205
Average power
P(AVG) rec'd signal rate mW
dissipation RL= 54 ΩVCC = 5.5 V, TJ=ALL HVD3088E 276
130°C
Thermal shut-down
TSD ALL 165 °C
junction temperature
TYPICAL CHARACTERISTICS
SN65HVD3082E
BUS INPUT CURRENT RMS SUPPLY CURRENT
vs vs
BUS INPUT VOLTAGE SIGNALING RATE
Figure 14. Figure 15.
Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 11
Product Folder Link(s): SN65HVD3082E SN75HVD3082E SN65HVD3085E SH65HVD3088E
NoLoad,
V =5V,
T =25 C
50%SquareWaveInput
CC
A
o
ReceiverOnly
DriverandReceiver
0.1
ICC -SupplyCurrent-mA
100
1
10
0.1
1000
SignalRate-kbps
ICC -SupplyCurrent-mA
100
1
10 100
ReceiverOnly
DriverandReceiver
NoLoad,
V =5V,
T =25 C
50%SquareWaveInput
CC
A
o
1
10
RL=120W
RL=60W
T =25 C
V =5V
A
CC
o
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0 10 20 30 40 50
IO-DifferentialOutputCurrent-mA
VOD -DifferentialOutputVoltage-V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VID -DifferentialInputVoltage-V
VO-ReceiverOutputVoltage-V
T =25 C
V =5V
V =0.75V
A
CC
IC
o
-200 -180 -160 -140 -120 -100 -80 -60 -40 -20
SN65HVD3082E, SN75HVD3082E
SN65HVD3085E, SH65HVD3088E
SLLS562G –AUGUST 2009–REVISED MAY 2009
www.ti.com
TYPICAL CHARACTERISTICS (continued)
SN65HVD3085E SN65HVD3088E
RMS SUPPLY CURRENT RMS SUPPLY CURRENT
vs vs
SIGNALING RATE SIGNAL RATE
Figure 16. Figure 17.
DRIVER DIFFERENTIAL OUTPUT VOLTAGE RECEIVER OUTPUT VOLTAGE
vs vs
DRIVER OUTPUT CURRENT DIFFERENTIAL INPUT VOLTAGE
Figure 18. Figure 19.
12 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s): SN65HVD3082E SN75HVD3082E SN65HVD3085E SH65HVD3088E
5
80
6
7
8
9
10
TA-Temperature- C
o
Rise/FallTime-ns
-40 -20 0 20 40 60
V =4.5V
CC
V =5V
CC
V =5.5V
CC
RTRT
SN65HVD3082E, SN75HVD3082E
SN65HVD3085E, SH65HVD3088E
www.ti.com
SLLS562G –AUGUST 2009–REVISED MAY 2009
TYPICAL CHARACTERISTICS (continued)
SN65HVD3088E
DRIVER RISE/FALL TIME
vs
TEMPERATURE
Figure 20.
APPLICATION INFORMATION
Note: The line should be terminated at both ends with its characteristic impedance (RT= ZO).
Note: Stub lengths off the main line should be kept as short as possible.
Figure 21. Typical Application Circuit
Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 13
Product Folder Link(s): SN65HVD3082E SN75HVD3082E SN65HVD3085E SH65HVD3088E
SN65HVD3082E, SN75HVD3082E
SN65HVD3085E, SH65HVD3088E
SLLS562G –AUGUST 2009–REVISED MAY 2009
www.ti.com
POWER USAGE IN AN RS-485 TRANSCEIVER
Power consumption is a concern in many applications. Power supply current is delivered to the bus load as well
as to the transceiver circuitry. For a typical RS–485 bus configuration, the load that an active driver must drive
consists of all of the receiving nodes, plus the termination resistors at each end of the bus.
The load presented by the receiving nodes depends on the input impedance of the receiver. The TIA/EIA-485-A
standard defines a unit load as allowing up to 1 mA. With up to 32 unit loads allowed on the bus, the total current
supplied to all receivers can be as high as 32 mA. The HVD308xE is rated as a 1/8 unit load device. As shown
in , the bus input current is less than 1/8 mA, allowing up to 256 nodes on a single bus.
The current in the termination resistors depends on the differential bus voltage. The standard requires active
drivers to produce at least 1.5 V of differential signal. For a bus terminated with one standard 120-Ωresistor at
each end, this sums to 25 mA differential output current whenever the bus is active. Typically the HVD308xE can
drive more than 25 mA to a 60 Ωload, resulting in a differential output voltage higher than the minimum required
by the standard. (See Figure 16.)
Overall, the total load current can be 60 mA to a loaded RS-485 bus. This is in addition to the current required by
the transceiver itself; the HVD308xE circuitry requires only about 0.4 mA with both driver and receiver enabled,
and only 0.3 mA with either the driver enabled or with the receiver enabled. In low-power shutdown mode,
neither the driver nor receiver is active, and the supply current is low.
Supply current increases with signaling rate primarily due to the totum pole outputs of the driver (see Figure 15).
When these outputs change state, there is a moment when both the high-side and low-side output transistors are
conducting and this creates a short spike in the supply current. As the frequency of state changes increases,
more power is used.
LOW-POWER SHUTDOWN MODE
When both the driver and receiver are disabled (DE low and RE high) the device is in shutdown mode. If the
enable inputs are in this state for less than 60 ns, the device does not enter shutdown mode. This guards against
inadvertently entering shutdown mode during driver/receiver enabling. Only when the enable inputs are held in
this state for 300 ns or more, the device is assured to be in shutdown mode. In this low-power shutdown mode,
most internal circuitry is powered down, and the supply current is typically 1 nA. When either the driver or the
receiver is re-enabled, the internal circuitry becomes active.
If only the driver is re-enabled (DE transitions to high) the driver outputs are driven according to the D input after
the enable times given by tPZH(SHDN) and tPZL(SHDN) in the driver switching characteristics. If the D input is open
when the driver is enabled, the driver outputs defaults to A high and B low, in accordance with the driver failsafe
feature.
If only the receiver is re-enabled (RE transitions to low) the receiver output is driven according to the state of the
bus inputs (A and B) after the enable times given by tPZH(SHDN) and tPZL(SHDN) in the receiver switching
characteristics. If there is no valid state on the bus the receiver responds as described in the failsafe operation
section.
If both the receiver and driver are re-enabled simultaneously, the receiver output is driven according to the state
of the bus inputs (A and B) and the driver output is driven according to the D input. Note that the state of the
active driver affects the inputs to the receiver. Therefore, the receiver outputs are valid as soon as the driver
outputs are valid.
14 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s): SN65HVD3082E SN75HVD3082E SN65HVD3085E SH65HVD3088E
Junction
PCBoard
qJB Calculated/Measured
SurfaceNode
AmbientNode
qCA Calculated
qJC Calculated/Measured
SN65HVD3082E, SN75HVD3082E
SN65HVD3085E, SH65HVD3088E
www.ti.com
SLLS562G –AUGUST 2009–REVISED MAY 2009
THERMAL CHARACTERISTICS OF IC PACKAGES
θJA (Junction-to-Ambient Thermal Resistance) is defined as the difference in junction temperature to ambient
temperature divided by the operating power.
θJA is NOT a constant and is a strong function of:
• the PCB design (50% variation)
• altitude (20% variation)
• device power (5% variation)
θJA can be used to compare the thermal performance of packages if the specific test conditions are defined and
used. Standardized testing includes specification of PCB construction, test chamber volume, sensor locations,
and the thermal characteristics of holding fixtures. θJA is often misused when it is used to calculate junction
temperatures for other installations.
TI uses two test PCBs as defined by JEDEC specifications. The low-k board gives average in-use condition
thermal performance and consists of a single trace layer 25 mm long and 2-oz thick copper. The high-k board
gives best case in–use condition and consists of two 1–oz buried power planes with a single trace layer 25 mm
long with 2-oz thick copper. A 4% to 50% difference in θJA can be measured between these two test cards.
θJC (Junction-to-Case Thermal Resistance) is defined as difference in junction temperature to case divided by the
operating power. It is measured by putting the mounted package up against a copper block cold plate to force
heat to flow from die, through the mold compound into the copper block.
θJC is a useful thermal characteristic when a heatsink is applied to package. It is NOT a useful characteristic to
predict junction temperature as it provides pessimistic numbers if the case temperature is measured in a non-
standard system and junction temperatures are backed out. It can be used with θJB in 1-dimensional thermal
simulation of a package system.
θJB (Junction-to-Board Thermal Resistance) is defined to be the difference in the junction temperature and the
PCB temperature at the center of the package (closest to the die) when the PCB is clamped in a cold−plate
structure. θJB is only defined for the high-k test card.
θJB provides an overall thermal resistance between the die and the PCB. It includes a bit of the PCB thermal
resistance (especially for BGA’s with thermal balls) and can be used for simple 1-dimensional network analysis of
package system (see Figure 22).
Figure 22. Thermal Resistance
Copyright © 2009, Texas Instruments Incorporated Submit Documentation Feedback 15
Product Folder Link(s): SN65HVD3082E SN75HVD3082E SN65HVD3085E SH65HVD3088E
SN65HVD3082E, SN75HVD3082E
SN65HVD3085E, SH65HVD3088E
SLLS562G –AUGUST 2009–REVISED MAY 2009
www.ti.com
REVISION HISTORY
Changes from Revision F (March 2009) to Revision G Page
• Added IDLE Bus to the Function Table ................................................................................................................................ 9
• Added Receiver Failsafe section .......................................................................................................................................... 9
• Added Graph - DRIVER RISE/FALL TIME vs TEMPERATURE ........................................................................................ 13
16 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated
Product Folder Link(s): SN65HVD3082E SN75HVD3082E SN65HVD3085E SH65HVD3088E
PACKAGE OPTION ADDENDUM
www.ti.com 16-Aug-2012
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
SN65HVD3082ED ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN65HVD3082EDG4 ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN65HVD3082EDGK ACTIVE VSSOP DGK 8 80 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN65HVD3082EDGKR ACTIVE VSSOP DGK 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN65HVD3082EDR ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN65HVD3082EDRG4 ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN65HVD3082EP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type
SN65HVD3082EPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type
SN65HVD3085ED ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN65HVD3085EDG4 ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN65HVD3085EDGK ACTIVE VSSOP DGK 8 80 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN65HVD3085EDGKG4 ACTIVE VSSOP DGK 8 80 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN65HVD3085EDGKR ACTIVE VSSOP DGK 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN65HVD3085EDGKRG4 ACTIVE VSSOP DGK 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN65HVD3085EDR ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN65HVD3085EDRG4 ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN65HVD3088ED ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN65HVD3088EDG4 ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
PACKAGE OPTION ADDENDUM
www.ti.com 16-Aug-2012
Addendum-Page 2
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
SN65HVD3088EDGK ACTIVE VSSOP DGK 8 80 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN65HVD3088EDGKG4 ACTIVE VSSOP DGK 8 80 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN65HVD3088EDGKR ACTIVE VSSOP DGK 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN65HVD3088EDGKRG4 ACTIVE VSSOP DGK 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN65HVD3088EDR ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN65HVD3088EDRG4 ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN75HVD3082ED ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN75HVD3082EDG4 ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN75HVD3082EDGK ACTIVE VSSOP DGK 8 80 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN75HVD3082EDGKG4 ACTIVE VSSOP DGK 8 80 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN75HVD3082EDGKR ACTIVE VSSOP DGK 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN75HVD3082EDGKRG4 ACTIVE VSSOP DGK 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN75HVD3082EDR ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN75HVD3082EDRG4 ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SN75HVD3082EP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type
SN75HVD3082EPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type
SNHVD3082EDGKG4 ACTIVE VSSOP DGK 8 80 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
SNHVD3082EDGKRG4 ACTIVE VSSOP DGK 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
PACKAGE OPTION ADDENDUM
www.ti.com 16-Aug-2012
Addendum-Page 3
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
SN65HVD3082EDGKR VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
SN65HVD3082EDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
SN65HVD3085EDGKR VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
SN65HVD3085EDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
SN65HVD3088EDGKR VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
SN65HVD3088EDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
SN75HVD3082EDGKR VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
SN75HVD3082EDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 16-Aug-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
SN65HVD3082EDGKR VSSOP DGK 8 2500 367.0 367.0 35.0
SN65HVD3082EDR SOIC D 8 2500 340.5 338.1 20.6
SN65HVD3085EDGKR VSSOP DGK 8 2500 367.0 367.0 35.0
SN65HVD3085EDR SOIC D 8 2500 340.5 338.1 20.6
SN65HVD3088EDGKR VSSOP DGK 8 2500 367.0 367.0 35.0
SN65HVD3088EDR SOIC D 8 2500 340.5 338.1 20.6
SN75HVD3082EDGKR VSSOP DGK 8 2500 367.0 367.0 35.0
SN75HVD3082EDR SOIC D 8 2500 340.5 338.1 20.6
PACKAGE MATERIALS INFORMATION
www.ti.com 16-Aug-2012
Pack Materials-Page 2
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