©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/04/19
SiC MOSFET
LSIC1MO120E0120, 1200 V, 120 mOhm, TO-247-3L
RoHS
LSIC1MO120E0120 1200 V N-channel, Enhancement-mode SiC MOSFET
Features
Applications
• Optimized for high-
frequency, high-efficiency
applications
• Extremely low gate
charge and output
capacitance
• Low gate resistance for
high-frequency switching
• Normally-off operation at
all temperatures
• Ultra-low on-resistance
• Halogen-free, RoHS
compliant and lead-free
• High-frequency
applications
• Solar Inverters
• Switch Mode Power
Supplies
• UPS
• Motor Drives
• High Voltage DC/DC
Converters
• Battery Chargers
• Induction Heating
Circuit Diagram TO-247-3L
21 3
*
* Body
diode
Product Summary
Characteristics Value Unit
VDS 1200 V
Typical RDS(ON) 120 mΩ
ID ( TC ≤ 100 °C) 18 A
• Littelfuse “RoHS” logo =
RoHS conform
• Littelfuse “HF” logo =
Halogen Free
• Littelfuse “Pb-free” logo =
Pb-free lead plating
Environmental
RoHS
Pb
Pb
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/04/19
SiC MOSFET
LSIC1MO120E0120, 1200 V, 120 mOhm, TO-247-3L
Thermal Characteristics
Maximum Ratings
Characteristics Symbol Conditions Value Unit
Continuous Drain Current ID
VGS = 20 V, TC = 25 °C 27 A
VGS = 20 V, TC = 100 °C 18
Pulsed Drain Current 1 ID(pulse) TC = 25 °C 54 A
Power Dissipation PDTC = 25 °C, TJ = 150 °C 139 W
Operating Junction Temperature TJ-55 to 150 °C
Gate-source Voltage
VGS,MAX Absolute maximum values -6 to 22
V
VGS,OP,TR Transient, <1% duty cycle -10 to 25
VGS,OP
Recommended DC
operating values -5 to 20
Storage Temperature TSTG --55 to 150 °C
Lead Temperature for Soldering Tsold -260 °C
Mounting Torque MDM3 or 6-32 screw 0.6 Nm
5.3 in-lb
Footnote 1: Pulse width limited by TJ,max
Characteristics Symbol Value Unit
Maximum Thermal Resistance, junction-to-case Rth,JC,max 0.9 °C/W
Maximum Thermal Resistance, junction-to-ambient Rth,JA,max 40 °C/W
Electrical Characteristics (TJ = 25 °C unless otherwise specified)
Characteristics Symbol Conditions Min Ty p Max Unit
Static Characteristics
Drain-source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 μA 1200 - - V
Zero Gate Voltage Drain Current IDSS
VDS = 1200 V, VGS = 0 V - 1 100 μA
VDS = 1200 V, VGS = 0 V, TJ = 150 °C - 2 -
Gate Leakage Current IGSS,F VGS = 22 V, VDS = 0 V - - 100 nA
IGSS,R VGS = -6 V, VDS = 0 V - - 100
Drain-source On-state Resistance RDS(ON)
ID = 14 A, VGS = 20 V -120 150 mΩ
ID = 14 A, VGS = 20 V, TJ = 150 °C -158 -
Gate Threshold Voltage VGS,(th)
VDS = VGS, ID = 7 mA 1.8 2.8 4.0 V
VDS = VGS, ID = 7 mA, TJ = 150 °C -1.9 -
Gate Resistance RG
Resonance method, Drain-Source
shorted - 0.85 - Ω
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/04/19
SiC MOSFET
LSIC1MO120E0120, 1200 V, 120 mOhm, TO-247-3L
Electrical Characteristics (TJ = 25 °C unless otherwise specified)
Characteristics Symbol Conditions Value Unit
Min Ty p Max
Turn-on Switching Energy EON VDD = 800 V, ID = 14 A,
VGS = -5/+20 V, RG,ext = 2 Ω,
L = 1.4mH, FWD = LSIC2SD120A10
-111 -
μJTurn-off Switching Energy EOFF - 68 -
Total Per-cycle Switching Energy ETS -179 -
Input Capacitance CISS
VDD = 800 V, VGS = 0 V,
f = 1 MHz, VAC = 25 mV
-1125 -
pFOutput Capacitance COSS - 53 -
Reverse Transfer Capacitance CRSS - 8 -
COSS Stored Energy EOSS -17 - μJ
Total Gate Charge Qg
VDD = 800 V, ID = 14 A,
VGS = -5/+20 V
- 80 -
nCGate-source Charge Qgs - 20 -
Gate-drain Charge Qgd - 28 -
Turn-on Delay Time td(on)
VDD = 800 V, VGS = -5/+20 V,
ID = 14 A, RG,ext = 2 Ω,
RL = 56 Ω,
Timing relative to VDS
-12 -
ns
Rise Time tr- 7 -
Turn-off Delay Time td(off) -16 -
Fall Time tf-10 -
Reverse Diode Characteristics
Characteristics Symbol Conditions Value Unit
Min Ty p Max
Diode Forward Voltage VSD
IS = 7 A, VGS = 0 V - 3.8 - V
IS = 7 A, VGS = 0 V, TJ = 150 °C - 3.4 -
Continuous Diode Forward Current ISVGS = 0 V, TC = 25 °C - - 26 A
Peak Diode Forward Current 1ISP - - 54
Footnote 1: Pulse width limited by TJ,max
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/04/19
SiC MOSFET
LSIC1MO120E0120, 1200 V, 120 mOhm, TO-247-3L
0
20
40
60
80
100
120
140
160
-75 -25 25 75 125 175
Case Temperature, TC (°C)
Maximum Power Dissipation (W)
Figure 2: Transfer Characteristics ( VDS = 10 V )
Figure 3: Output Characteristics ( TJ = 25 °C )
Figure 1: Maximum Power Dissipation ( TJ = 150 °C )
0
10
20
30
40
50
60
0510 15 20
150 °C
25 °C
-55 °C
Gate-Source Voltage, V
GS
(V)
Drain Current, I
D
(A)
Figure 4: Output Characteristics ( TJ = 150 °C )
0
10
20
30
40
50
0246810
20V
18V
16V
14V
12V
10V
(Pulse Width < 400µs)
Drain-Source Voltage, V
DS
(V)
Drain Current, I
D
(A)
0
10
20
30
40
50
0246810
(Pulse Width < 400µs)
20V
18V
16V
14V
12V
10V
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
Figure 6: Reverse Conduction Characteristics ( T
J
= 25 °C )
0
10
20
30
40
50
02468
-5V 0V 5V 10V20V
15V
(Pulse Width < 400µs)
Reverse Vo ltage, VSD (V)
Reverse Current, IS (A)
Figure 5: Output Characteristics (TJ = -55 °C)
(Pulse Width < 400 µs)
0
10
20
30
40
50
0246810
20V
18V
16V
14V
12V
10V
Drain-Source Voltage, V
DS
(V)
Drain Current, I
D
(A)
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/04/19
SiC MOSFET
LSIC1MO120E0120, 1200 V, 120 mOhm, TO-247-3L
Figure 7: Reverse Conduction Characteristics (T
J
= 150 °C)
Figure 8: Reverse Conduction Characteristics (TJ = -55 °C)
Figure 9: Transient Thermal Impedance Figure 10: Safe Operating Area (TC = 25 °C)
Figure 11: Normalized On-resistance vs. Drain Current Figure 12: Normalized On-resistance
0
10
20
30
40
50
02468
-5V 0V 5V 10V
15V
20V
(Pulse Width < 400µs)
Reverse Current, I
S
(A)
Reverse Vo ltage, V
SD
(V)
0
10
20
30
40
50
02468
-5V 0V
5V
10V
15V
20V
(Pulse Width < 400µs)
Reverse Current, IS (A)
Reverse Vo ltage, VSD (V)
0.01
0.1
1
10
100
0.1110 100 1000
Single Pulse
10µs
100µs
1ms
DC
Drain-Source Voltage, V
DS
(V)
Drain Current, I
D
(A)
Single Pulse
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
0.5
0.3
0.1
0.05
0.02
0.01
Pulse Width (S)
Tr ansient Thermal Impedance, Zth,JC
(Normalized to Rth,JC)
0
0.5
1
1.5
2
2.5
01020304050
(VGS = 20V)
150ºC
-55ºC
150ºC
Drain Current, I
D
(A)
Normalized On-resistance, R
DS(ON)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
-75 -50 -25 0255075 100 125 150 175
(VGS = 20V, ID = 14A)
Junction Te mperature, T
J
(ºC)
Normalized On-resistance, R
DS(ON)
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/04/19
SiC MOSFET
LSIC1MO120E0120, 1200 V, 120 mOhm, TO-247-3L
Figure 13: Threshold Voltage Figure 14: Drain-Source Blocking Voltage
Figure 15: Junction Capacitances Figure 16: Junction Capacitances
Figure 17: COSS Stored Energy EOSS Figure 18: Gate Charge
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/04/19
SiC MOSFET
LSIC1MO120E0120, 1200 V, 120 mOhm, TO-247-3L
Package Dimensions TO-247-3L
R0.93
5.44 5.44
2.46
Recommended Hole Pattern Layout
UNIT: mm
E
E1
A
A2
D2D1
ØP
ØP1
E2/2
E2
Q
S
c
A1
DL
L1
b2 (2x)
eb4
b (3x)
e
OPTIONAL
Symbol Millimeters
Min Nom Max
A 4.80 5.03 5.20
A1 2.25 2.38 2.54
A2 1.85 1.98 2.11
b 0.99 - 1.40
b2 1.65 - 2.39
b4 2.59 - 3.43
c 0.38 0.64 0.89
D 20.80 20.96 21.34
D1 13.50 - -
D2 0.51 1. 19 1.35
e 5.44 BSC
E 15.75 15.90 16.13
E1 13.06 14.02 14.15
E2 4.19 4.32 4.83
L 19.81 20.19 20.57
L1 3.81 4.19 4.45
øP 3.55 3.61 3.66
øP1 7.06 7. 1 9 7.32
Q 5.49 5.61 6.20
S 6.05 6.17 6.30
Notes:
1. Dimensions are in millimeters
2. Dimension D, E do not include
mold flash. Mold flash shall not
exceed 0.127 mm per side mea-
sured at outer most extreme of
plastic body.
3.øP to have a maximum draft angle
of 38.1 mm to the top of the part
with a maximum hole diameter of
3.912 mm.
Figure 19: Switching Energy vs. Drain Current Figure 20: Switching Energy vs. Gate Resistance
©2019 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 02/04/19
SiC MOSFET
LSIC1MO120E0120, 1200 V, 120 mOhm, TO-247-3L
Packing Options
Part Number Marking Packing Mode M.O.Q
LSIC1MO120E0120 SIC1MO120E0120 Tube (30pcs) 450
Part Numbering and Marking System
SIC
1
MO
E = TO-247-3L
YY
WW
E
ZZZZZZ-ZZ
120
0120
SIC1MO120E0120
YYWWE
ZZZZZZ-ZZ
L
F
= SiC
= MOSFET
= Voltage Rating (1200 V)
= Gen1
= R
DS(ON)
(120 mOhm)
= Week
= Special Code
= Lot Number
= Year
Packing Specification TO-247-3L
(6.198±0.508)
0.9010 0.118~0.120 (2X)
(13.233±01.016) (2X)
Ø
0.315±0.002 (2X)
0.118±0.008
(22.987±0.508)
0.846±0.02
0.030±0.004
0.063±0.008
(13.005±1.016)
20.955~21.045
NOTE:
1. All pin plug holes are considered critical dimension
2. Tolerance is to be ±0.010 unless otherwise specified
3. Dimension are in inch (and millimeters).
Ø
(22.885)
(532.257~534.543) 0.9010
(22.885)
(2.997~3.048)(2X)
(8.001±0.051)(2X)
Ø
Ø
0.5210±0.040 (2X)
0.244±0.02
(2.997±0.203)
0.905±0.02
(21.488±0.508)
(1.600±0.203)
(0.762±0.102)
0.5120±0.040
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