DSB20I15PA
preliminary
V = V
Symbol Definition
Ratings
typ. max.
I
R
I
V
F
0.48
R1.75 K/
R
min.
20
V
RSM
5T = 25°C
VJ
T = °C
VJ
m
40V = V
R
T = 25°C
VJ
I = A
F
T = °C
C
130
P
tot
70
T = 25°C
C
RK/
20
15
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
0.60
T = 25°C
VJ
100
V
F0
0.23T = °C
VJ
150
r
F
7.2 m
0.39T = °C
VJ
I = A
F
20
0.54
I = A
F
40
I = A
F
40
threshold voltage
slope resistance for power loss calculation only
m
125
V
RRM
15
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
1.28
unction capacitance V = V3 T = 25°Cf = 1 MHz
RVJ
n
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
150
390
15
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Schottky
15
0.50
IXYS reserves the right to change limits, conditions and dimensions. 20131030aData according to IEC 60747and per semiconductor unless otherwise specified
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