BF 820, BF 822 NPN High Voltage Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage NPN Power dissipation - Verlustleistung 250 mW Plastic case Kunststoffgehause SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Dimensions / Mae in mm 1=B 2=E 3=C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BF 820 BF 822 Collector-Emitter-voltage B open VCE0 300 V 250 V Collector-Base-voltage E open VCB0 300 V 250 V Emitter-Base-voltage C open VEB0 5V Power dissipation - Verlustleistung Ptot 250 mW 1) Collector current - Kollektorstrom (dc) IC 50 mA Peak Collector current - Kollektor-Spitzenstrom ICM 100 mA Peak Base current - Basis-Spitzenstrom IBM 50 mA Junction temperature - Sperrschichttemperatur Tj 150/C Storage temperature - Lagerungstemperatur TS - 65...+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 200 V ICB0 - - 10 nA IE = 0, VCB = 200 V, Tj = 150/C ICB0 - - 10 :A IEB0 - - 50 nA - - 600 mV Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 5 V Collector saturation volt. - Kollektor-Sattigungsspg. 2) IC = 30 mA, IB = 5 mA 1 VCEsat ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 2 01.11.2003 High Voltage Transistors BF 820, BF 822 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. hFE 50 - - fT 60 MHz - - - 1.6 pF - DC current gain - Kollektor-Basis-Stromverhaltnis 1) VCE = 20 V, IC = 25 mA Gain-Bandwidth Product - Transitfrequenz VCE = 10 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat VCB = 30 V, IE = ie = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft CCB0 RthA Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking - Stempelung 420 K/W 2) BF 821, BF 823 BF 820 = 1V BF 822 = 1X ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 3