SMCJ5.0(A) - SMCJ170(A)
Taiwan Semiconductor
1 Version: Q1812
1500W, 5V - 170V Surface Mount Transient Voltage Suppressor
FEATURES
● Ideal for automated placement
● Glass passivated junction
● Excellent clamping capability
● Fast response time: Typically less than
1.0ps from 0 V to BV min
● Typical IR less than 1μA above 10V
● Moisture sensitivity level: level 1, per J-STD-020
● AEC-Q101 qualified available:
ordering code with suffix “H”
● Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
APPLICATIONS
● Immunization of sensitive devices in automotive,
telecommunications, consumer electronics, and industrial
equipment from electrostatic discharge (ESD) and transient
voltages induced by load switching and lightning.
MECHANICAL DATA
● Case：DO-214AB (SMC)
● Molding compound meets UL 94V-0 flammability rating
● Terminal：Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity：As marked
● Weight： 0.21 g (approximately)
KEY PARAMETERS
PARAMETER VALUE UNIT
VWM 5 - 170 V
VBR 6.4 - 231 V
PPK 1500 W
TJ MAX 150 °C
Package DO-214AB (SMC)
Configuration Single die
DO-214AB (SMC)
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak power dissipation at TA=25°C, tp=1ms(1) PPK 1500 W
Steady state power dissipation at TA=25°C PD 5 W
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load IFSM 200 A
Forward Voltage @ IF=100A for Unidirectional only (2) VF 3.5 /5.0 V
Junction temperature TJ -55 to +150 °C
Storage temperature TSTG -55 to +150 °C
Notes:
1. Non-repetitive current pulse per Fig. 3 and derated above TA=25°C per Fig. 2
2. VF=3.5V on SMCJ5.0 - SMCJ90 devices and VF=5.0V on SMCJ100 - SMCJ170 devices
Devices for bipolar applications
1. For bidirectional use C or CA suffix for types SMCJ5.0 - types SMCJ170
2. Electrical characteristics apply in both directions
SMCJ5.0(A) - SMCJ170(A)
Taiwan Semiconductor
2 Version: Q1812
THERMAL PERFORMANCE
PARAMETER
SYMBOL
TYP
UNIT
Junction-to-ambient thermal resistance RӨJA 55 °C/W
Junction-to-case thermal resistance RӨJC 10 °C/W
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
Part number Marking
code
Breakdown
voltage
VBR@IT
(V)
Test
current
IT
(mA)
Working
stand-off
voltage
VWM
(V)
Maximum
Reverse
Leakage
(Note 3)
IR@VWM (µA)
Maximum
peak
impulse
current
(Note 2)
IPPM
(A)
Maximum
clamping
voltage
(Note 2)
VC@IPPM
(V)
MIN. MAX.
SMCJ5.0 GDD 6.4 7.3 10 5 1000 164 9.6
SMCJ5.0A GDE 6.4 7 10 5 1000 171 9.2
SMCJ6.0 GDF 6.67 8.15 10 6 1000 138 11.4
SMCJ6.0A GDG 6.67 7.37 10 6 1000 152 10.3
SMCJ6.5 GDH 7.22 8.82 10 6.5 500 128 12.3
SMCJ6.5A GDK 7.22 7.98 10 6.5 500 140 11.2
SMCJ7.0 GDL 7.78 9.51 10 7 200 118 13.3
SMCJ7.0A GDM 7.78 8.6 10 7 200 131 12.0
SMCJ7.5 GDN 8.33 10.30 1 7.5 100 110 14.3
SMCJ7.5A GDP 8.33 9.21 1 7.5 100 122 12.9
SMCJ8.0 GDQ 8.89 10.9 1 8 50 105 15.0
SMCJ8.0A GDR 8.89 9.83 1 8 50 115 13.6
SMCJ8.5 GDS 9.44 11.5 1 8.5 20 99 15.9
SMCJ8.5A GDT 9.44 10.4 1 8.5 20 109 14.4
SMCJ9.0 GDU 10 12.2 1 9 10 93 16.9
SMCJ9.0A GDV 10 11.1 1 9 10 102 15.4
SMCJ10 GDW 11.1 13.6 1 10 5 83 18.8
SMCJ10A GDX 11.1 12.3 1 10 5 92 17.0
SMCJ11 GDY 12.2 14.9 1 11 1 78 20.1
SMCJ11A GDZ 12.2 13.5 1 11 1 86 18.2
SMCJ12 GED 13.3 16.3 1 12 1 71 22.0
SMCJ12A GEE 13.3 14.7 1 12 1 79 19.9
SMCJ13 GEF 14.4 17.6 1 13 1 66 23.8
SMCJ13A GEG 14.4 15.9 1 13 1 73 21.5
SMCJ14 GEH 15.6 19.1 1 14 1 61 25.8
SMCJ14A GEK 15.6 17.2 1 14 1 67 23.2
SMCJ15 GEL 16.7 20.4 1 15 1 58 26.9
SMCJ15A GEM 16.7 18.5 1 15 1 64 24.4
SMCJ16 GEN 17.8 21.8 1 16 1 54 28.8
SMCJ16A GEP 17.8 19.7 1 16 1 60 26.0
SMCJ17 GEQ 18.9 23.1 1 17 1 51 30.5
SMCJ17A GER 18.9 20.9 1 17 1 57 27.6
SMCJ18 GES 20 24.4 1 18 1 48 32.2
SMCJ18A GET 20 22.1 1 18 1 53 29.2
SMCJ20 GEU 22.2 27.1 1 20 1 43 35.8
SMCJ20A GEV 22.2 24.5 1 20 1 48 32.4
SMCJ22 GEW 24.4 29.8 1 22 1 39 39.4
SMCJ22A GEX 24.4 26.9 1 22 1 44 35.5
SMCJ24 GEY 26.7 32.6 1 24 1 36 43.0
SMCJ24A GEZ 26.7 29.5 1 24 1 40 38.9
SMCJ26 GFD 28.9 35.3 1 26 1 33 46.6
SMCJ26A GFE 28.9 31.9 1 26 1 37 42.1
SMCJ28 GFF 31.1 38 1 28 1 31 50.0
SMCJ5.0(A) - SMCJ170(A)
Taiwan Semiconductor
3 Version: Q1812
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
Part number Marking
code
Breakdown voltage
VBR@IT
(V)
Test
current
IT
(mA)
Working
stand-off
voltage
VWM
(V)
Maximum
Reverse
Leakage
(Note 3)
IR@VWM (µA)
Maximum
peak impulse
current
(Note 2)
IPPM
(A)
Maximum
clamping
voltage
(Note 2)
VC@IPPM
(V)
MIN. MAX.
SMCJ28A GFG 31.1 34.4 1 28 1 34 45.4
SMCJ30 GFH 33.3 40.7 1 30 1 29 53.5
SMCJ30A GFK 33.3 36.8 1 30 1 32 48.4
SMCJ33 GFL 36.7 44.9 1 33 1 26 59.0
SMCJ33A GFM 36.7 40.6 1 33 1 29 53.3
SMCJ36 GFN 40 48.9 1 36 1 24 64.3
SMCJ36A GFP 40 44.2 1 36 1 27 58.1
SMCJ40 GFQ 44.4 54.3 1 40 1 22 71.4
SMCJ40A GFR 44.4 49.1 1 40 1 24 64.5
SMCJ43 GFS 47.8 58.4 1 43 1 20 76.7
SMCJ43A GFT 47.8 52.8 1 43 1 22 69.4
SMCJ45 GFU 50 61.1 1 45 1 19 80.3
SMCJ45A GFV 50 55.3 1 45 1 21 72.7
SMCJ48 GFW 53.3 65.1 1 48 1 18 85.5
SMCJ48A GFX 53.3 58.9 1 48 1 20 77.4
SMCJ51 GFY 56.7 69.3 1 51 1 17 91.1
SMCJ51A GFZ 56.7 62.7 1 51 1 19 82.4
SMCJ54 GGD 60 73.3 1 54 1 16 96.3
SMCJ54A GGE 60 66.3 1 54 1 18 87.1
SMCJ58 GGF 64.4 78.7 1 58 1 15 103
SMCJ58A GGG 64.4 71.2 1 58 1 16 93.6
SMCJ60 GGH 66.7 81.5 1 60 1 14 107
SMCJ60A GGK 66.7 73.7 1 60 1 16 96.8
SMCJ64 GGL 71.1 86.9 1 64 1 13.8 114
SMCJ64A GGM 71.1 78.6 1 64 1 15 103
SMCJ70 GGN 77.8 95.1 1 70 1 12.6 125
SMCJ70A GGP 77.8 86 1 70 1 13.9 113
SMCJ75 GGQ 83.3 102 1 75 1 11.7 134
SMCJ75A GGR 83.3 92.1 1 75 1 13 121
SMCJ78 GGS 86.7 106 1 78 1 11.3 139
SMCJ78A GGT 86.7 95.8 1 78 1 12.5 126
SMCJ85 GGU 94.4 115 1 85 1 10.4 151
SMCJ85A GGV 94.4 104 1 85 1 11.5 137
SMCJ90 GGW 100 122 1 90 1 9.8 160
SMCJ90A GGX 100 111 1 90 1 10.7 146
SMCJ100 GGY 111 136 1 100 1 8.8 179
SMCJ100A GGZ 111 123 1 100 1 9.7 162
SMCJ110 GHD 122 149 1 110 1 8 196
SMCJ110A GHE 122 135 1 110 1 8.9 177
SMCJ120 GHF 133 163 1 120 1 7.3 214
SMCJ120A GHG 133 147 1 120 1 8.1 193
SMCJ130 GHH 144 176 1 130 1 6.8 231
SMCJ130A GHK 144 159 1 130 1 7.5 209
SMCJ150 GHL 167 204 1 150 1 5.8 266
SMCJ150A GHM 167 185 1 150 1 6.4 243
SMCJ160 GHN 178 218 1 160 1 5.4 287
SMCJ160A GHP 178 197 1 160 1 6 259
SMCJ170 GHQ 189 231 1 170 1 5.1 304
SMCJ170A GHR 189 209 1 170 1 5.7 275
Notes:
1. VBR measure after IT applied for 300μs, IT=square wave pulse or equivalent
2. Surge current waveform per Figure. 3 and derate per Figure. 2
3. For bipolar types having VWM of 10 V and under, the IR limit is doubled
4. All terms and symbols are consistent with ANSI/IEEE C62.35
SMCJ5.0(A) - SMCJ170(A)
Taiwan Semiconductor
4 Version: Q1812
ORDERING INFORMATION
ORDERING CODE
(Note 1, 2, 3) PACKAGE PACKING
SMCJxxxxHR7G SMC 850 / 7" Plastic reel
SMCJxxxxHR6G SMC 3,000 / 13" Paper reel
SMCJxxxxHM6G SMC 3,000 / 13" Plastic reel
SMCJxxxx R7G SMC 850 / 7" Plastic reel
SMCJxxxx R6G SMC 3,000 / 13" Paper reel
SMCJxxxx M6G SMC 3,000 / 13" Plastic reel
SMCJxxxxHV7G Matrix SMC 850 / 7" Plastic reel
SMCJxxxxHV6G Matrix SMC 3,000 / 13" Plastic reel
SMCJxxxx V7G Matrix SMC 850 / 7" Plastic reel
SMCJxxxx V6G Matrix SMC 3,000 / 13" Plastic reel
SMCJxxxxHR7 SMC 850 / 7" Plastic reel
SMCJxxxxHR6 SMC 3,000 / 13" Paper reel
SMCJxxxxHM6 SMC 3,000 / 13" Plastic reel
SMCJxxxx R7 SMC 850 / 7" Plastic reel
SMCJxxxx R6 SMC 3,000 / 13" Paper reel
SMCJxxxx M6 SMC 3,000 / 13" Plastic reel
SMCJxxxxHV7 Matrix SMC 850 / 7" Plastic reel
SMCJxxxxHV6 Matrix SMC 3,000 / 13" Plastic reel
SMCJxxxx V7 Matrix SMC 850 / 7" Plastic reel
SMCJxxxx V6 Matrix SMC 3,000 / 13" Plastic reel
Note 1:
"xxxx" defines voltage from 5.0V (SMCJ5.0)
to 170V (SMCJ170A)
Note 2:
"H" means AEC-Q101 qualified
Note 3:
"G" means green compound (halogen free)
SMCJ5.0(A) - SMCJ170(A)
Taiwan Semiconductor
5 Version: Q1812
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Peak Pulse Power Rating Curve
Fig.2 Pulse Derating Curve
Fig.3 Clamping Power Pulse Waveform
Fig.4 Typical Junction Capacitance
0.1
1
10
100
0.1 1 10 100 1000 10000
PPPM, PEAK PULSE POWER (KW)
tp, PULSE WIDTH, (μs)
NON-REPETITIVE
PULSE
WAVEFORM
SHOWN in FIG.3
0
25
50
75
100
125
0 25 50 75 100 125 150 175 200
10
100
1000
10000
100000
1 10 100
CJ, JUNCTION CAPACITANCE (pF) A
f=1.0MHz
Vsig=50mVp-p
VR=0
VR-RATED
STAND-OFF
VOLTAGE
UNIDIRECTIONAL
BIDIRECTIONAL
PEAK PULSE POWER (PPPM) OR CURRENT(IPP)
DERATING IN PERCENTAGE (%)
TA, AMBIENT TEMPERATURE (°C)
V(BR), BREAKDOWN VOLTAGE (V)
0
20
40
60
80
100
120
140
0 0.5 1 1.5 2 2.5 3
IPPM, PEAK PULSE CURRENT (%)
t, TIME (ms)
td
Peak value
IPPM
Rise time tr=10μs to 100%
Half value-IPPM/2
Pulse width(td) is defined
as the point where the peak
current decays to 50% of IPPM
10/1000μs, waveform
SMCJ5.0(A) - SMCJ170(A)
Taiwan Semiconductor
6 Version: Q1812
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.5 Maximum Non-repetitive Forward Surge Current
IFSM, PEAK FORWARD SURGE CURRENT (A)
10
100
1000
1 10 100
NUMBER OF CYCLES AT 60 Hz
8.3ms Single Half Sine Wave
UNIDIRECTIONAL ONLY
SMCJ5.0(A) - SMCJ170(A)
Taiwan Semiconductor
7 Version: Q1812
PACKAGE OUTLINE DIMENSIONS
DO-214AB (SMC)
DIM. Unit (mm) Unit (inch)
Min. Max. Min. Max.
A 2.90 3.20 0.114 0.126
B 6.60 7.11 0.260 0.280
C 5.59 6.22 0.220 0.245
D 2.00 2.62 0.079 0.103
E 1.00 1.60 0.039 0.063
F 7.75 8.13 0.305 0.320
G 0.10 0.20 0.004 0.008
H 0.15 0.31 0.006 0.012
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
Symbol Unit (mm) Unit (inch)
A 3.30 0.130
B 2.50 0.098
C 6.80 0.268
D 4.40 0.173
E 9.40 0.370
SMC Matrix SMC P/N =Marking Code
G =Green Compound
YW =Date Code
F =Factory Code
Note: Cathode band for unidirectional products only
SMCJ5.0(A) - SMCJ170(A)
Taiwan Semiconductor
8 Version: Q1812
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
SMCJ5.0(A) - SMCJ170(A)
Taiwan Semiconductor
9 Version: Q1812
