New Product V20200G, VF20200G, VB20200G & VI20200G Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.62 V at IF = 5 A FEATURES TMBS (R) TO-220AB * Trench MOS Schottky technology ITO-220AB * Low forward voltage drop, low power losses * High efficiency operation * Low thermal resistance 2 3 1 1 V20200G 2 * Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) 3 VF20200G PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 TO-263AB * Solder bath temperature 275 C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) PIN 2 * Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TO-262AA K K TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. 2 1 1 VB20200G 3 MECHANICAL DATA VI20200G PIN 1 K PIN 2 2 HEATSINK PIN 1 PIN 2 PIN 3 K Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 200 V IFSM 110 A VF at IF = 10 A 0.71 V TJ max. 150 C Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL V20200G VF20200G VB20200G VI20200G UNIT VRRM 200 V per device Maximum average forward rectified current (fig. 1) per diode IF(AV) 20 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 110 A Non-repetitive avalanche energy at TJ = 25 C, L = 60 mH per diode EAS 60 mJ Peak repetitive reverse current at tp = 2 s, 1 kHz, TJ = 38 C 2 C per diode IRRM 0.5 A Voltage rate of change (rated VR) dV/dt 10 000 V/s Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V TJ, TSTG - 40 to + 150 C Maximum repetitive peak reverse voltage Operating junction and storage temperature range Document Number: 89117 Revision: 24-Jun-09 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 New Product V20200G, VF20200G, VB20200G & VI20200G Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage IR = 1.0 mA Instantaneous forward voltage per diode (1) SYMBOL TYP. VBR TJ = 25 C MAX. UNIT 200 (minimum) - V 0.86 1.23 1.70 IF = 5 A IF = 10 A TJ = 25 C IF = 5 A IF = 10 A TJ = 125 C 0.62 0.71 0.80 VR = 180 V TJ = 25 C TJ = 125 C 1.9 1.6 - A mA VR = 200 V TJ = 25 C TJ = 125 C 2.5 150 15 A mA Reverse current per diode (2) VF IR V Notes (1) (2) Pulse test: 300 s pulse width, 1 % duty cycle Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL V20200G VF20200G VB20200G VI20200G UNIT RJC 3.2 5.5 3.2 3.2 C/W ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V20200G-E3/4W PREFERRED P/N 1.88 4W 50/tube Tube ITO-220AB VF20200G-E3/4W 1.75 4W 50/tube Tube TO-263AB VB20200G-E3/4W 1.39 4W 50/tube Tube TO-263AB VB20200G-E3/8W 1.39 8W 800/reel Tape and reel TO-262AA VI20200G-E3/4W 1.45 4W 50/tube Tube 25 9 Resistive or Inductive Load 8 Average Power Loss (W) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) V(B,I)20200G 20 15 VF20200G 10 5 D = 0.2 7 D = 0.5 D = 0.8 D = 0.3 D = 0.1 6 D = 1.0 5 4 T 3 2 1 0 D = tp/T tp 0 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 Case Temperature (C) Average Forward Current (A) Figure 1. Maximum Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89117 Revision: 24-Jun-09 New Product V20200G, VF20200G, VB20200G & VI20200G Vishay General Semiconductor Transient Thermal Impedance (C/W) Instantaneous Forward Current (A) 100 TA = 150 C TA = 125 C 10 TA = 100 C 1 TA = 25 C 0.1 0.2 0 0.4 0.8 0.6 1.0 1.2 1.4 1.6 10 Junction to Case V(B,I)20200G 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Figure 3. Typical Instantaneous Forward Characteristics Per Diode Figure 6. Typical Transient Thermal Impedance Per Diode 100 10 TA = 150 C TA = 125 C 1 TA = 100 C 0.1 0.01 TA = 25 C 0.001 0.0001 10 20 30 40 50 60 70 80 90 100 10 Junction to Case VF20200G 1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Per Diode Figure 7. Typical Transient Thermal Impedance Per Diode 10 000 Junction Capacitance (pF) Transient Thermal Impedance (C/W) Instantaneous Reverse Current (mA) Instantaneous Forward Voltage (V) TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 0.1 1 10 100 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Per Diode Document Number: 89117 Revision: 24-Jun-09 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 New Product V20200G, VF20200G, VB20200G & VI20200G Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB ITO-220AB 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) PIN 2 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.105 (2.67) 0.095 (2.41) 0.104 (2.65) 0.096 (2.45) 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 7 REF. 0.350 (8.89) 0.330 (8.38) 3 7 REF. 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) 0.560 (14.22) 0.530 (13.46) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.671 (17.04) 0.651 (16.54) PIN 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 7 REF. 0.076 (1.93) REF. 45 REF. 0.145 (3.68) 0.135 (3.43) 0.635 (16.13) 0.625 (15.87) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 0.190 (4.83) 0.170 (4.32) 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) TO-262AA 0.185 (4.70) 0.175 (4.44) 0.411 (10.45) MAX. 0.250 (6.35) MIN. 30 (TYP.) (REF.) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) K 0.950 (24.13) 0.920 (23.37) 1 PIN 2 0.401 (10.19) 0.381 (9.68) 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 3 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) PIN 1 PIN 2 PIN 3 HEATSINK 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.022 (0.56) 0.014 (0.35) 0.205 (5.20) 0.195 (4.95) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.055 (1.40) 0.045 (1.14) Mounting Pad Layout 0.42 (10.66) MIN. K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.33 (8.38) MIN. 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89117 Revision: 24-Jun-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000