BAV100, BAV101, BAV102, BAV103
www.vishay.com Vishay Semiconductors
Rev. 1.8, 12-Jul-17 2Document Number: 85542
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Reverse Current vs. Junction Temperature Fig. 2 - Forward Current vs. Forward Voltage
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to lead RthJL 350 K/W
Thermal resistance junction to ambient air On PC board
50 mm x 50 mm x 1.6 mm RthJA 500 K/W
Junction temperature Tj175 °C
Storage temperature range Tstg -65 to +175 °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA VF1V
Reverse current
VR = 50 V BAV100 IR100 nA
VR = 100 V BAV101 IR100 nA
VR = 150 V BAV102 IR100 nA
VR = 200 V BAV103 IR100 nA
Tj = 100 °C, VR = 50 V BAV100 IR15 μA
Tj = 100 °C, VR = 100 V BAV101 IR15 μA
Tj = 100 °C, VR = 150 V BAV102 IR15 μA
Tj = 100 °C, VR = 200 V BAV103 IR15 μA
Breakdown voltage
IR = 100 μA, tp/T = 0.01,
tp = 0.3 ms BAV100 V(BR) 60 V
IR = 100 μA, tp/T = 0.01,
tp = 0.3 ms BAV101 V(BR) 120 V
IR = 100 μA, tp/T = 0.01,
tp = 0.3 ms
BAV102 V(BR) 200 V
BAV103 V(BR) 250 V
Diode capacitance VR = 0 V, f = 1 MHz,
VHF = 50 mV CD1.5 pF
Differential forward current IF = 10 mA rf5Ω
Reverse recovery time IF = IR = 30 mA,
iR = 3 mA, RL = 100 Ωtrr 50 ns
0 40 80 120 160
0.01
0.1
1
10
1000
I - Reverse Current (µA)
R
Tj- Junction Temperature (°C)
200
94 9084
100
Scattering Limit
V
R
= V
RRM
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I - Forward Current (mA)
F
VF- Forward Voltage (V)
2.0
94 9085
Scattering Limit
Tj = 25 °C