IRGB4061DPBF - INTERNATIONAL RECTIFIER

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

IRGB4061DPbF

1www.irf.com

09/06/07

n-channel

VCES = 600V

IC = 18A, TC = 100°C

tSC ≥ 5μs, TJ(max) = 175°C

VCE(on) typ. = 1.65V

Features

• Low VCE (ON) Trench IGBT Technology

• Low switching losses

• Maximum Junction temperature 175 °C

•5 μS short circuit SOA

• Square RBSOA

• 100% of the parts tested for 4X rated current (ILM)

• Positive VCE (ON) Temperature co-efficient

• Ultra fast soft Recovery Co-Pak Diode

• Tight parameter distribution

• Lead Free Package

Benefits

• High Efficiency in a wide range of applications

• Suitable for a wide range of switching frequencies due to

Low VCE (ON) and Low Switching losses

• Rugged transient Performance for increased reliability

• Excellent Current sharing in parallel operation

• Low EMI

GC E

Gate Collector Emitter

TO-220AB

GCE

Absolute Maximum Ratings

Parameter Max. Units

VCES Collector-to-Emitter Voltage 600 V

IC @ TC = 25°C Continuous Collector Current 36

IC @ TC = 100°C Continuous Collector Current 18

ICM Pulse Collector Current 72

ILM Clamped Inductive Load Current

72 A

IF @ TC = 25°C Diode Continous Forward Current 36

IF @ TC = 100°C Diode Continous Forward Current 18

IFM Diode Maximum Forward Current

VGE Continuous Gate-to-Emitter Voltage ±20 V

Transient Gate-to-Emitter Voltage ±30

PD @ TC = 25°C Maximum Power Dissipation 206 W

PD @ TC = 100°C Maximum Power Dissipation 103

TJOperating Junction and -55 to +175

TSTG Storage Temperature Range °C

Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter Min. Typ. Max. Units

RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.73 °C/W

RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 2.00

RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.50 –––

RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 80 –––

PD - 97189B

IRGB4061DPbF

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Notes:

VCC = 80% (VCES), VGE = 20V, L = 100μH, RG = 22Ω.

This is only applied to TO-220AB package.

Pulse width limited by max. junction temperature.

Refer to AN-1086 for guidelines for measuring V(BR)CES safely.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions Ref.Fig

V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 100μA

CT6

ΔV(BR)CES/ΔTJTemperature Coeff. of Breakdown Voltage —0.40—V/°C

VGE = 0V, IC = 1mA (25°C-175°C) CT6

—1.651.95 IC = 18A, VGE = 15V, TJ = 25°C 5,6,7

VCE(on) Collector-to-Emitter Saturation Voltage — 2.05 — V IC = 18A, VGE = 15V, TJ = 150°C 9,10,11

—2.15— IC = 18A, VGE = 15V, TJ = 175°C

VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 500μA9, 10,

ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — -18 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) 11, 12

gfe Forward Transconductance — 12 — S VCE = 50V, IC = 18A, PW = 80μs

ICES Collector-to-Emitter Leakage Current — 2.0 25 μAVGE = 0V, VCE = 600V

— 550 — VGE = 0V, VCE = 600V, TJ = 175°C

VFM Diode Forward Voltage Drop — 2.30 3.30 V IF = 18A 8

—1.6— IF = 18A, TJ = 175°C

IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Ref.Fig

QgTotal Gate Charge (turn-on) — 35 55 IC = 18A 24

Qge Gate-to-Emitter Charge (turn-on) — 10 15 nC VGE = 15V CT1

Qgc Gate-to-Collector Charge (turn-on) — 15 25 VCC = 400V

Eon Turn-On Switching Loss — 95 140 IC = 18A, VCC = 400V, VGE = 15V CT4

Eoff Turn-Off Switching Loss — 350 405 μJRG = 22Ω, L = 200μH, LS = 150nH

Etotal Total Switching Loss — 445 545 Energy losses include tail & diode reverse recovery

td(on) Turn-On delay time — 40 55 IC = 18A, VCC = 400V, VGE = 15V CT4

trRise time — 25 35 ns RG = 22Ω, L = 200μH, LS = 150nH

td(off) Turn-Off delay time — 105 120

tfFall time — 25 35

Eon Turn-On Switching Loss — 285 — IC = 18A, VCC = 400V, VGE=15V 13, 15

Eoff Turn-Off Switching Loss — 570 — μJRG=22Ω, L=200μH, LS=150nH, TJ = 175°C

f

CT4

Etotal Total Switching Loss — 855 — Energy losses include tail & diode reverse recovery WF1, WF2

td(on) Turn-On delay time — 40 — IC = 18A, VCC = 400V, VGE = 15V 14, 16

trRise time — 25 — ns RG = 22Ω, L = 200μH, LS = 150nH CT4

td(off) Turn-Off delay time — 120 — TJ = 175°C WF1

tfFall time — 40 — WF2

Cies Input Capacitance — 1043 — pF VGE = 0V 23

Coes Output Capacitance — 87 — VCC = 30V

Cres Reverse Transfer Capacitance — 32 — f = 1.0Mhz

TJ = 175°C, IC = 72A 4

RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2

Rg = 22Ω, VGE = +15V to 0V

SCSOA Short Circuit Safe Operating Area 5 — — μsVCC = 400V, Vp =600V 22, CT3

Rg = 22Ω, VGE = +15V to 0V WF4

Erec Reverse Recovery Energy of the Diode — 260 — μJTJ = 175°C 17, 18, 19

trr Diode Reverse Recovery Time — 100 — ns VCC = 400V, IF = 18A 20, 21

Irr Peak Reverse Recovery Current — 23 — A VGE = 15V, Rg = 22Ω, L =200μH, Ls = 150nH WF3

Conditions

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Fig. 1 - Maximum DC Collector Current vs.

Case Temperature

Fig. 2 - Power Dissipation vs. Case

Temperature

Fig. 3 - Forward SOA

TC = 25°C, TJ ≤ 175°C; VGE =15V

Fig. 4 - Reverse Bias SOA

TJ = 175°C; VGE =15V

Fig. 5 - Typ. IGBT Output Characteristics

TJ = -40°C; tp = 80μs

Fig. 6 - Typ. IGBT Output Characteristics

TJ = 25°C; tp = 80μs

020 40 60 80 100 120 140 160 180

TC (°C)

IC (A)

0 20 40 60 80 100 120 140 160 180

TC (°C)

100

150

200

250

Ptot (W)

10 100 1000

VCE (V)

100

IC (A)

012345678

VCE (V)

ICE (A)

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

012345678

VCE (V)

ICE (A)

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

1 10 100 1000 10000

VCE (V)

0.1

100

IC (A)

1msec

10μsec

100μsec

Tc = 25°C

Tj = 175°C

Single Pulse

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Fig. 7 - Typ. IGBT Output Characteristics

TJ = 175°C; tp = 80μs

Fig. 8 - Typ. Diode Forward Characteristics

tp = 80μs

Fig. 10 - Typical VCE vs. VGE

TJ = 25°C

Fig. 11 - Typical VCE vs. VGE

TJ = 175°C

012345678

VCE (V)

ICE (A)

VGE = 18V

VGE = 15V

VGE = 12V

VGE = 10V

VGE = 8.0V

Fig. 12 - Typ. Transfer Characteristics

VCE = 50V; tp = 10μs

5 101520

VGE (V)

VCE (V)

ICE = 9.0A

ICE = 18A

ICE = 36A

Fig. 9 - Typical VCE vs. VGE

TJ = -40°C

5101520

VGE (V)

VCE (V)

ICE = 9.0A

ICE = 18A

ICE = 36A

5 101520

VGE (V)

VCE (V)

ICE = 9.0A

ICE = 18A

ICE = 36A

0 5 10 15 20

VGE (V)

100

120

140

160

180

ICE (A)

TJ = 25°C

TJ = 175°C

0.0 1.0 2.0 3.0 4.0 5.0

VF (V)

100

IF (A)

-40°c

25°C

175°C

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Fig. 13 - Typ. Energy Loss vs. IC

TJ = 175°C; L = 200μH; VCE = 400V, RG = 22Ω; VGE = 15V

Fig. 14 - Typ. Switching Time vs. IC

TJ = 175°C; L = 200μH; VCE = 400V, RG = 22Ω; VGE = 15V

Fig. 15 - Typ. Energy Loss vs. RG

TJ = 175°C; L = 200μH; VCE = 400V, ICE = 18A; VGE = 15V

Fig. 16 - Typ. Switching Time vs. RG

TJ = 175°C; L = 200μH; VCE = 400V, ICE = 18A; VGE = 15V

5 10152025303540

IC (A)

200

400

600

800

1000

1200

1400

Energy (μJ)

EOFF

EON

510 15 20 25 30 35 40 45

IC (A)

100

1000

Swiching Time (ns)

tdOFF

tdON

0 25 50 75 100 125

Rg (Ω)

100

200

300

400

500

600

700

800

900

Energy (μJ)

EOFF

EON

025 50 75 100 125

RG (Ω)

100

1000

Swiching Time (ns)

tdOFF

tdON

Fig. 17 - Typ. Diode IRR vs. IF

TJ = 175°C

Fig. 18 - Typ. Diode IRR vs. RG

TJ = 175°C

010 20 30 40

IF (A)

IRR (A)

RG = 10Ω

RG = 22Ω

RG = 47Ω

RG = 100Ω

025 50 75 100 125

RG (Ω)

IRR (A)

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Fig. 19 - Typ. Diode IRR vs. diF/dt

VCC = 400V; VGE = 15V; IF = 18A; TJ = 175°C

Fig. 20 - Typ. Diode QRR vs. diF/dt

VCC = 400V; VGE = 15V; TJ = 175°C

0500 1000 1500

diF /dt (A/μs)

IRR (A)

Fig. 23 - Typ. Capacitance vs. VCE

VGE= 0V; f = 1MHz

Fig. 24 - Typical Gate Charge vs. VGE

ICE = 18A; L = 600μH

0 500 1000 1500

diF /dt (A/μs)

400

600

800

1000

1200

1400

1600

QRR (μC)

10Ω

22Ω

100Ω

47Ω

18A

36A

9.0A

Fig. 21 - Typ. Diode ERR vs. IF

TJ = 175°C

010 20 30 40

IF (A)

100

150

200

250

300

350

400

Energy (μJ)

RG = 10Ω

RG = 22Ω

RG = 47Ω

RG = 100Ω

Fig. 22 - VGE vs. Short Circuit Time

VCC = 400V; TC = 25°C

8 1012141618

VGE (V)

Time (μs)

100

110

120

Current (A)

020 40 60 80 100

VCE (V)

100

1000

10000

Capacitance (pF)

Cies

Coes

Cres

0 5 10 15 20 25 30 35

Q G, Total Gate Charge (nC)

VGE, Gate-to-Emitter Voltage (V)

VCES

= 300V

VCES

= 400V

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Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

Thermal Response ( Z thJC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE ) Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) τi (sec)

0.244 0.000084

1.102 0.001770

0.655 0.013544

τJ

τ1

τ2

τ2τ3

τ3

R1R2

R2R3

τC

Ci τi/Ri

Ci= τi/Ri

1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

Thermal Response ( Z thJC )

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE ) Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Ri (°C/W) τi (sec)

0.3193 0.000273

0.4104 0.004525

τJ

τ1

τ2

R1R2

τC

Ci i/Ri

Ci= τi/Ri

IRGB4061DPbF

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VC C

DUT

80 V DUT

4 80V

DUT

360V

VCC

diode clamp /

DUT

DUT /

DRIVER

- 5V

VCC

DUT

R =

Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit

Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit

Fig.C.T.5 - Resistive Load Circuit

C f orce

400μH

G force DUT

D1 10K

C sense

0.0075μ

E sense

E force

Fig.C.T.6 - BVCES Filter Circuit

IRGB4061DPbF

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-40

-30

-20

-10

-0.05 0.05 0.15

time (μS)

(A)

Peak

10%

Peak

Fig. WF3 - Typ. Diode Recovery Waveform

@ TJ = 175°C using Fig. CT.4

Fig. WF1 - Typ. Turn-off Loss Waveform

@ TJ = 175°C using Fig. CT.4

Fig. WF2 - Typ. Turn-on Loss Waveform

@ TJ = 175°C using Fig. CT.4

-100

100

200

300

400

500

600

-5.70 -5.20 -4.70 -4.20

Time(μs)

(V)

-5

OFF

Loss

5% V

5% I

90% I

-100

100

200

300

400

500

600

-0.15 -0.05 0.05 0.15 0.25

Time (μs)

(V)

-10

TEST

90% test

10% test

5% V

-100

100

200

300

400

500

-5.00 0.00 5.00 10.00

time (μS)

(V)

-50

100

150

200

250

(A)

Fig. WF4 - Typ. S.C. Waveform

@ TJ = 25°C using Fig. CT.3

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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 09/07

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial market.

Qualification Standards can be found on IR’s Web site.

TO-220AB packages are not recommended for Surface Mount Application.

TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB Part Marking Information

INTERNAT IONAL PART NUMBER

RECTIFIER

LOT CODE

ASSEMBLY

LOGO

YEAR 0 = 2000

DAT E CODE

WEEK 19

LINE C

LOT CODE 1789

EXAMPLE: T HIS IS AN IRF1010

Note: "P" in as s embly line pos ition

indi cates "L ead - F r ee"

IN THE ASSEMBLY LINE "C"

AS S EMBLED ON WW 19, 2000

10- For the most current drawing please refer to IR website

at http://www.irf.com/package/pkigbt.html