II. Manufacturing Information
A. Description/Function: 12-Channel Prog rammable Gamma Reference System
B. Process: S4
C. Number of Device Transistors: 22084
D. Fabri cation Location: Texas
E. Assembly Location: UTL Thailand
F. Date of Initial Production: January 24, 2009
III. Packaging Information
A. Package Type: 28-pin TQFN 5x5
B. Lead Frame: Copper
C. Lead Finish: 100% matte Tin
D. Die Attach: Conductive Epoxy
E. Bondwire: Au (1.3 mil dia.)
F. Mold Material: Epoxy with silica filler
G. Assembly Diagram: #
H. Flammability Rating: Class UL94-V0
MAX9697ATI+
I. Classification of Moisture Sensitivity per
JEDEC standard J-STD-020-C
Level 1
J. Singl e Layer The ta Ja: 47°C/W
K. Single Layer Theta Jc: 2.1°C/W
L. Multi Layer Theta Ja: 29°C/W
M. Multi Layer Theta Jc: 2.1°C/W
IV. Die Information
A. Dimensions: 89 X 85 mils
B. Passivation: Si3N4/SiO2 (Silicon nitride/ Silicon dioxide
C. Interconnect: Aluminum/Si (Si = 1%)
D. Backside Metallization: None
E. Minimum Metal Width: Metal1 = 0.5 / Metal2 = 0.6 / Metal3 = 0.6 microns (as drawn)
F. Minimum Metal Spacing: Metal1 = 0.45 / Metal2 = 0.5 / Metal3 = 0.6 microns (as drawn)
G. Bondpad Dimensions: 5 mil. Sq.
H. Isolation Dielectri c: SiO2
I. Die Separation Method: Wafer Saw
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