IAUA200N04S5N010
OptiMOS™-5 Power-Transistor
Features
• OptiMOS™ - power MOSFET for automotive applications
• N-channel - Enhancement mode - Normal Level
• AEC Q101 qualified
• MSL3 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
IDTC=25°C, VGS=10V1) 200 A
TC=100°C, VGS=10V2) 200
Pulsed drain current2) ID,pulse TC=25°C 800
Avalanche energy, single pulse2) EAS ID=100A 280 mJ
Avalanche current, single pulse
IAS -200 A
Gate source voltage
VGS - ±20 V
Power dissipation
Ptot TC=25°C 167 W
Operating and storage temperature
Tj, Tstg - -55 ... +175 °C
Value
VDS
40
V
RDS(on),max
1
mW
200
A
Product Summary
PG-HSOF-5
Type
Package
Marking
IAUA200N04S5N010
PG-HSOF-5
5N04N010
1
1
2
3
4
5
Rev. 1.1 page 1 2018-07-10
IAUA200N04S5N010
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics2)
Thermal resistance, junction - case
RthJC - - - 0.9 K/W
Thermal resistance, junction -
ambient
RthJA 6 cm2 cooling area3) - - 60
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS=0V, ID= 1mA 40 - - V
Gate threshold voltage
VGS(th) VDS=VGS, ID=100µA 2.2 2.8 3.4
Zero gate voltage drain current
IDSS
VDS=40V, VGS=0V,
Tj=25°C
- - 1 µA
VDS=40V, VGS=0V,
Tj=125°C2)
- - 100
Gate-source leakage current
IGSS VGS=20V, VDS=0V - - 100 nA
Drain-source on-state resistance
RDS(on) VGS=7V, ID=100A -0.9 1.2 mW
VGS=10V, ID=100A -0.8 1.0
Values
Rev. 1.1 page 2 2018-07-10
IAUA200N04S5N010
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics2)
Input capacitance
Ciss -5750 7650 pF
Output capacitance
Coss -1600 2130
Reverse transfer capacitance
Crss -80 120
Turn-on delay time
td(on) -11 -ns
Rise time
tr- 6 -
Turn-off delay time
td(off) -23 -
Fall time
tf-12 -
Gate Charge Characteristics2)
Gate to source charge
Qgs -28 37 nC
Gate to drain charge
Qgd -21 32
Gate charge total
Qg-99 132
Gate plateau voltage
Vplateau -4.7 - V
Reverse Diode
Diode continous forward current2) IS- - 200 A
Diode pulse current2) IS,pulse - - 800
Diode forward voltage
VSD
VGS=0V, IF=100A,
Tj=25°C
-0.8 1.1 V
Reverse recovery time2) trr
VR=20V, IF=50A,
diF/dt=100A/µs
-65 -ns
Reverse recovery charge2) Qrr -80 -nC
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1) Current is limited by package; with an RthJC = 0.9K/W the chip is able to carry 300A at 25°C.
TC=25°C
2) The parameter is not subject to production test- verified by design/characterization.
Values
VGS=0V, VDS=25V,
f=1MHz
VDD=20V, VGS=10V,
ID=200A, RG=3.5W
VDD=32V, ID=200A,
VGS=0 to 10V
Rev. 1.1 page 3 2018-07-10
IAUA200N04S5N010
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS = 10 V ID = f(TC); VGS = 10 V
3 Safe operating area 4 Max. transient thermal impedance
ID = f(VDS); TC = 25 °C; D = 0 ZthJC = f(tp)
parameter: tpparameter: D=tp/T
single pulse
0.01
0.05
0.1
0.5
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
ZthJC [K/W]
tp[s]
1 µs
10 µs
100 µs
150 µs
1
10
100
1000
0.1 1 10 100
ID[A]
VDS [V]
0
25
50
75
100
125
150
175
200
050 100 150 200
Ptot [W]
TC[°C]
0
25
50
75
100
125
150
175
200
225
050 100 150 200
ID[A]
TC[°C]
Rev. 1.1 page 4 2018-07-10
IAUA200N04S5N010
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID = f(VDS); Tj = 25 °C RDS(on) = f(ID); Tj = 25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
ID = f(VGS); VDS = 6V RDS(on) = f(Tj); ID = 100 A; VGS = 10 V
parameter: Tj
0.25
0.5
0.75
1
1.25
1.5
1.75
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj[°C]
5.5 V
7 V
10 V
0
100
200
300
400
500
600
700
800
0 1 2 3
ID[A]
VDS [V]
5V
4.5V
4.5 V 5 V
5.5 V
0
2
4
6
8
10
0100 200 300 400 500 600 700 800
RDS(on) [mW]
ID[A]
7V
10V
-55 °C
25 °C
175 °C
0
100
200
300
400
500
600
700
800
3 4 5 6
ID[A]
VGS [V]
Rev. 1.1 page 5 2018-07-10
IAUA200N04S5N010
9 Typ. gate threshold voltage 10 Typ. capacitances
VGS(th) = f(Tj); VGS = VDS C = f(VDS); VGS = 0 V; f = 1 MHz
parameter: ID
11 Typical forward diode characteristicis 12 Avalanche characteristics
IF = f(VSD)IA S= f(tAV)
parameter: Tjparameter: Tj(start)
25 °C
175 °C
100
101
102
103
0 0.2 0.4 0.6 0.8 1 1.2 1.4
IF[A]
VSD [V]
100 µA
1000 µA
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj[°C]
Ciss
Coss
Crss
102
103
104
010 20 30
C[pF]
VDS [V]
101
25 °C
100 °C
150 °C
1
10
100
1000
110 100 1000
IAV [A]
tAV [µs]
25 °C
175 °C
100
101
102
103
0 0.4 0.8 1.2
IF[A]
VSD [V]
Rev. 1.1 page 6 2018-07-10
IAUA200N04S5N010
13 Avalanche energy 14 Drain-source breakdown voltage
EAS = f(Tj)VBR(DSS) = f(Tj); ID = 1 mA
15 Typ. gate charge 16 Gate charge waveforms
VGS = f(Qgate); ID = 200 A pulsed
parameter: VDD
VGS
Qgate
Vgs(th)
Qg(th)
Qgs
Qgd
Qsw
Qg
36
38
40
42
44
46
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj[°C]
8 V 32 V
0
1
2
3
4
5
6
7
8
9
10
010 20 30 40 50 60 70 80 90 100 110
VGS [V]
Qgate [nC]
200 A
100 A
50 A
0
100
200
300
400
500
600
25 75 125 175
EAS [mJ]
Tj[°C]
Rev. 1.1 page 7 2018-07-10
IAUA200N04S5N010
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2017
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.1 page 8 2018-07-10
IAUA200N04S5N010
Revision History
Version
Revision 1.0
Revision 1.1
Date
package name, SOA 10µs curve
07.12.2017
10.07.2018
Final Data Sheet
Changes
Rev. 1.1 page 9 2018-07-10