© 2010 IXYS All rights reserved 1 - 3
MDD 312
20100203a
IXYS reserves the right to change limits, test conditions and dimensions.
VRSM VRRM Type
VV
1300 1200 MDD 312-12N1
1500 1400 MDD 312-14N1
1700 1600 MDD 312-16N1
1900 1800 MDD 312-18N1
2100 2000 MDD 312-20N1
2300 2200 MDD 312-22N1
IFRMS = 2x520 A
IFAVM = 2x310 A
VRRM = 1200-2200 V
Features
• International standard package
• Direct copper bonded Al2O3-ceramic
with copper base plate
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered E 72873
Applications
• Supplies for DC power equipment
• DC supply for PWM inverter
• Field supply for DC motors
• Battery DC power supplies
Advantages
• Simple mounting
• Improved temperature and power cycling
• Reduced protection circuits
Symbol Conditions Maximum Ratings
IFRMS TVJ = TVJM 520 A
IFAVM TC = 100°C; 180° sine 310 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz) 10500 A
VR = 0 t = 8.3 ms (60 Hz) 11200 A
TVJ = TVJM t = 10 ms (50 Hz) 9200 A
VR = 0 t = 8.3 ms (60 Hz) 9800 A
∫∫
∫∫
∫i2dt TVJ = 45°C t = 10 ms (50 Hz) 551000 A2s
VR = 0 t = 8.3 ms (60 Hz) 527000 A2s
TVJ = TVJM t = 10 ms (50 Hz) 423 000 A2s
VR = 0 t = 8.3 ms (60 Hz) 403 000 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL ≤ 1 mA t = 1 s 3600 V~
MdMounting torque (M6) 4.5-7/40-62 Nm/lb.in.
Terminal connection torque (M8) 11-13/97-115 Nm/lb.in.
Weight Typical including screws 750 g
Symbol Conditions Characteristic Values
IRRM TVJ = TVJM; VR = VRRM 30 mA
VFIF = 600 A; TVJ = 25°C 1.32 V
VT0 For power-loss calculations only 0.8 V
rTTVJ = TVJM 0.6 mΩ
RthJC per diode; DC current 0.12 K/W
per module 0.06 K/W
RthJK per diode; DC current 0.16 K/W
per module 0.08 K/W
QSTVJ = 125°C; IF = 400 A; -di/dt = 50 A/μs 700 μC
IRM 260 A
dSCreeping distance on surface 12.7 mm
dACreepage distance in air 9.6 mm
aMaximum allowable acceleration 50 m/s2
High Power
Diode Modules
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
31 2
Dimensions in mm (1 mm = 0.0394")
1
2
3
http://store.iiic.cc/
© 2010 IXYS All rights reserved 2 - 3
MDD 312
20100203a
IXYS reserves the right to change limits, test conditions and dimensions.
0 2550751001251500 100 200 300 400 500
0
100
200
300
400
500
600
0 25 50 75 100 125 150
110
105
106
0.001 0.01 0.1 1
0
2000
4000
6000
8000
10000
0 100 200 300 400 500 600
0
250
500
750
1000
1250
1500
1750
I2t
IFAVM
IdAVM
A
Ptot W
TA
TC
s
t
ms
t
A2s
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
400
450
500
550
IFSM A
A
IFAVM
W
Ptot
A
TA
180° sin
120°
60°
30°
DC
RL
80 % VRRM
TVJ = 45°C
TVJ = 150°C
50 Hz
TVJ = 150°C
VR = 0 V
TVJ = 45°C
180° sin
120°
60°
30°
DC
0.6
0.8
0.1
0.2
0.3
0.4
RthKA K/W
0.06
2 x MDD312
Circuit
B2U
0.12
0.06
0.04
RthKA K/W
0.5
0.08
0.2
0.3
50 1500 100 200
100
300
500
0
200
400
600
50 1500 100 200
0
5
10
15
20
25
TVJ = 125°C
VR = 600 V
TVJ = 125°C
VR = 600 V
IF = 400 A
IF = 400 A
IRM
diF/dt
A/µs
A
trr
diF/dt
A/µs
µs
Fig. 1 Surge overload current
IFSM: Crest value, t: duration
Fig. 2 I2t versus time (1-10 ms) Fig. 3 Maximum forward current
at case temperature
Fig. 4 Power dissipation vs. forward current and ambient temperature (per diode)
Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current
and ambient temperature R = resistive load, L = inductive load
Fig. 5 Typ. peak reverse current
IRM versus -diF/dt
Fig. 7 Typ. recovery time trr
versus -diF/dt
http://store.iiic.cc/
© 2010 IXYS All rights reserved 3 - 3
MDD 312
20100203a
IXYS reserves the right to change limits, test conditions and dimensions.
t
ZthJK
s
t
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
0.20
0.25
K/W
ZthJC
IdAVM
Ptot
0 25 50 75 100 125 1500 200 400 600 800
0
500
1000
1500
2000
2500
3000
A
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
0.20
TA
W
K/W
s
3 x MDD312
Circuit
B6U
0.3
0.2
0.15
0.1
0.06
0.03
0.4
RthKA K/W
DC
180°
120°
60°
30°
DC
30°
60°
120°
180°
Fig. 8 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
Fig. 9 Transient thermal impedance junction to case (per diode)
Fig. 10Transient thermal impedance junction to heatsink (per diode)
RthJC for various conduction angles d:
dR
thJC (K/W)
DC 0.120
180°C 0.128
120°C 0.135
60°C 0.153
30°C 0.185
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.0058 0.00054
2 0.031 0.098
3 0.072 0.54
4 0.0112 12
RthJK for various conduction angles d:
dR
thJK (K/W)
DC 0.160
180°C 0.168
120°C 0.175
60°C 0.193
30°C 0.225
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.0058 0.00054
2 0.031 0.098
3 0.072 0.54
4 0.0112 12
5 0.04 12
http://store.iiic.cc/
