IXYS Date: 13.09.2004
Data Sheet Issue: 2
Dual Diode Modules MD# 600
Absolute Maximum Ratings
VRRM
VDRM
[V]
MDD
MDA
MDK
1200 600-12N1 600-12N1 600-12N1
1400 600-14N1 600-14N1 600-14N1
1600 600-16N1 600-16N1 600-16N1
1800 600-18N1 600-18N1 600-18N1
2000 600-20N1 600-20N1 600-20N1
2200 600-22N1 600-22N1 600-22N1
VOLTAGE RATINGS MAXIMUM
LIMITS UNITS
VRRM Repetitive peak reverse voltage 1) 1200-2200 V
VRSM Non-repetitive peak reverse voltage 1) 1300-2300 V
OTHER RATINGS MAXIMUM
LIMITS UNITS
IF(AV)M Maximum average forward current. Tcase = 111°C 2) 600 A
IF(AV)M Maximum average forward current. Tcase = 85°C 2) 883 A
IF(AV)M Maximum average forward current. Tcase = 100°C 2) 726 A
IF(RMS) Nominal RMS forward current. Tcase = 55°C 2) 1818 A
IF(d.c.) D.C. forward current. Tcase = 55°C 1158 A
ITSM Peak non-repetitive surge tp = 10 ms, VRM = 60%VRRM 3) 21.8 kA
ITSM2 Peak non-repetitive surge tp = 10 ms, VRM ≤ 10 V 3) 24.0 kA
I2t I2t capacity for fusing tp = 10 ms, VRM = 60%VRRM 3) 2.38×106A2s
I2t I2t capacity for fusing tp = 10 ms, VRM ≤ 10 V 3) 2.88×106A2s
Visol Isolation Voltage 4) 3500 V
Tj op Operating temperature range -40 to +125 °C
Tj max Maximum junction temperature +150 °C
Tstg Storage temperature range -40 to +125 °C
Notes:
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Single phase; 50 Hz, 180° half-sinewave.
3) Half-sinewave, 150°C Tj initial.
4) AC RMS voltage, 50 Hz, 1min test.
Data Sheet. MD#600-12N1 to 22N1 Issue 2 Page 1 of 9 September, 2004
IXYS Dual Diode Module Types MD#600-12N1 to MD#600-22N1
Data Sheet. MD#600-12N1 to 22N1 Issue 2 Page 2 of 9 September, 2004
Characteristics
PARAMETER TEST CONDITIONS 1) MIN. TYP. MAX. UNITS
VFM Maximum peak forward voltage ITM = 1800 A - - 1.15 V
VFM Maximum peak forward voltage ITM = 500 A - - 0.88
VT0 Threshold voltage - - 0.75 V
rTSlope resistance - - 0.2 mΩ
IRRM Peak reverse current Rated VRRM - - 50 mA
Qrr Recovered Charge ITM = 1000 A, tp = 1 ms,
di/dt = 10 A/µs, Vr = 50 V - 1800 - µC
Qra Recovered Charge, 50% chord - 1500 1750 µC
IRM Reverse recovery current - 165 - A
trr Reverse recovery time, 50% chord - 18 - µs
Single Diode - - 0.062 K/W
RthJC Thermal resistance, junction to case Whole Module - - 0.031 K/W
Single Diode - - 0.02 K/W
RthCK Thermal resistance, case to heatsink Whole Module - - 0.01 K/W
F1Mounting force (to heatsink) 4.25 - 5.75 Nm
F2Mounting force (to terminals) 2) 10.2 - 13.8 Nm
WtWeight - 1.2 - kg
Notes:
1) Unless otherwise indicated Tj = 150°C
2) Screws must be lubricated
IXYS Dual Diode Module Types MD#600-12N1 to MD#600-22N1
Data Sheet. MD#600-12N1 to 22N1 Issue 2 Page 3 of 9 September, 2004
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade VRRM
V VRSM
V VR
DC V
12 1200 1300 820
14 1400 1500 930
16 1600 1700 1040
18 1800 1900 1150
20 2000 2100 1260
22 2200 2300 1370
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
5.0 Computer Modelling Parameters
5.1 Device Dissipation Calculations
T
AVTTT
AV rff
WrffVV
I⋅⋅
⋅⋅⋅++−
=2
2
2
00 2
4 and:
Kj
th
AV
TTT
RT
W
−=∆
∆
=
max
Where VT0=0.75V, rT=0.2mΩ,
Rth = Supplementary thermal impedance, see table below and
ff = Form factor, see table below.
Supplementary Thermal Impedance
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave 0.0706
7 0.0679
1 0.0662
9 0.0652
5 0.0639
5 0.06277 0.062
Sine wave 0.0676
7 0.0653
6 0.0640
8 0.0633 0.062
Form Factors
Conduction Angle 30° 60° 90° 120° 180° 270° d.c.
Square wave 3.464 2.449 2 1.732 1.414 1.149 1
Sine wave 3.98 2.778 2.22 1.879 1.57
IXYS Dual Diode Module Types MD#600-12N1 to MD#600-22N1
Data Sheet. MD#600-12N1 to 22N1 Issue 2 Page 4 of 9 September, 2004
5.2 Calculating VF using ABCD Coefficients
The on-state characteristic IF vs. VF, on page 6 is represented in two ways;
(i) the well established VT0 and rT tangent used for rating purposes and
(ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VF in
terms of IF given below:
(
)
FFFF IDICIBAV ⋅+⋅+⋅+= ln
The constants, derived by curve fitting software, are given below for both hot and cold
characteristics. The resulting values for VF agree with the true device characteristic over a current
range, which is limited to that plotted.
25°C Coefficients 150°C Coefficients
A 0.46164273 A 0.435837127
B 0.1048225 B 0.06435749
C 1.6116×10-4 C 1.84243×10-4
D -7.48063×10-3 D -2.353947×10-3
IXYS Dual Diode Module Types MD#600-12N1 to MD#600-22N1
Data Sheet. MD#600-12N1 to 22N1 Issue 2 Page 5 of 9 September, 2004
5.3 D.C. Thermal Impedance Calculation
∑
=
=
−
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛−⋅= np
p
t
pt p
err 11
τ
Where p = 1 to n, n is the number of terms in the series and:
t = Duration of heating pulse in seconds.
rt= Thermal resistance at time t.
rp= Amplitude of pth term.
τp= Time Constant of rth term.
The coefficients for this device are shown in the tables below:
D.C.
Term 1 2 3 4
rp0.05428 4.4894×10-3 2.3382×10-3 0.8759×10-3
τ
p2.69428 0.126017 0.013878 1.435×10-3
6.0 Reverse recovery ratings
(i) Qra is based on 50% IRM chord as shown in Fig. 1
Fig. 1
(ii) Qrr is based on a 150 µs integration time i.e. ∫
=
s
rrrr dtiQ
µ
150
0
.
(iii)
2
1
t
t
FactorK =
IXYS Dual Diode Module Types MD#600-12N1 to MD#600-22N1
Data Sheet. MD#600-12N1 to 22N1 Issue 2 Page 6 of 9 September, 2004
Curves
Figure 1 - Forward characteristics of Limit device
100
1000
10000
0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6
Instantaneous On-state voltage - VTM (V)
Instantaneous On-state current - ITM (A)
Tj = 150°CTj = 25°C
Figure 2 - Transient thermal impedance
0.00001
0.0001
0.001
0.01
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Time (s)
Thermal impedance (K/W)
Single Diode
MD#600-12N1 to 22N1
Issue 2
MD#600-12N1 to 22N1
Issue 2
IXYS Dual Diode Module Types MD#600-12N1 to MD#600-22N1
Data Sheet. MD#600-12N1 to 22N1 Issue 2 Page 7 of 9 September, 2004
Figure 3 - Total recovered charge, Qrr Figure 4 - Recovered charge, Qra (50% chord)
1000
10000
1 10 100 1000
di/dt (A/µs)
Recovered charge - Qrr (µC)
Tj=150°C
1500A
2000A
1000A
500A
1000
10000
1 10 100 1000
di/dt (A/µs)
Recovered charge - Qra, 50% chord (µC)
500A
Tj=150°C
1000A
2000A
1500A
Figure 5 - Peak reverse recovery current, Irm Figure 6 - Maximum recovery time, trr (50% chord)
100
1000
10000
1 10 100 1000
di/dt (A/µs)
Reverse recovery current - Irm (A)
2000A
1500A
1000A
500A
Tj=150°C
1
10
100
1 10 100 1000
di/dt (A/µs)
Reverse recovery time - trr, (50% chord) - (µs)
2000A
1500A
1000A
500A
Tj=150°C
MD#600-12N1 to 22N1
Issue 2 MD#600-12N1 to 22N1
Issue 2
MD#600-12N1 to 22N1
Issue 2
MD#600-12N1 to 22N1
Issue 2
IXYS Dual Diode Module Types MD#600-12N1 to MD#600-22N1
Data Sheet. MD#600-12N1 to 22N1 Issue 2 Page 8 of 9 September, 2004
Figure 7 – Forward current vs. Power dissipation Figure 8 – Forward current vs. Heatsink
temperature
0
500
1000
1500
2000
2500
0 500 1000 1500 2000
Mean Forward Current (A ) (W ho le cy cle averaged)
Maximum Forward Dissipation (W)
6ø 3ø ½ wave d.c.
0
20
40
60
80
100
120
140
160
0 500 1000 1500 2000
Mean forward current (A) (Whole cycle averaged)
Maximum permissible heatsink temperature (°C)
6ø 3ø ½ wave d.c.
MD#600-12N1 to 22N1
Issue 2 MD#600-12N1 to 22N1
Issue 2
Figure 9 - Maximum surge Rating
1000
10000
100000
Total peak half sine surge current (A)
1.00E+06
1.00E+07
1.00E+08
Maximum I2t (A2s)
135101 5 10 50 100
Duration of surge (ms) Duration of surge (cycles @ 50Hz)
I2t: 60% VRRM
ITSM: 60% VRRM
I2t: VRRM ≤10V
ITSM: VRRM ≤10V
Tj (initial) = 150°C
Gate may temporarily lose control of conduction angle
MD#600-12N1 to 22N1
Issue 2
IXYS Dual Diode Module Types MD#600-12N1 to MD#600-22N1
Data Sheet. MD#600-12N1 to 22N1 Issue 2 Page 9 of 9 September, 2004
Outline Drawing & Ordering Information
ORDERING INFORMATION (Please quote 11 digit code as below)
M D# 600 N 1
Fixed
Type Code Configuration code
DD, DA, DK Average Current
Rating
Voltage code
VDRM/100
12-22 Standard diode Fixed
Version Code
Order code: MDD600-14N1– MDD configuration, 1400V VDRM, VRRM
IXYS
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E-mail: sales@ixys.net
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The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed
except with the written permission of and in the manner permitted by the proprietors IXYS Semiconductors GmbH.
In the interest of product improvement, IXYS reserves the right to change specifications at any time without prior notice.
© W e stcode Semiconductors Ltd.
3 1 2
MDD
3 1 2
MDA
3 1 2
MDK
