BPX38-3--4 - Infineon Technologies

BPX 38

NPN-Silizium-Fototransistor

Silicon NPN Phototransistor

2001-02-21 1

Features

• Especially suitable for applications from

450 nm to 1120 nm

• High linearity

• Hermetically sealed metal package (TO-18)

with base connection, suitable up to 125 °C

• Available in groups

Applications

• Photointerrupters

• Industrial electronics

• For control and drive circuits

Wesentliche Merkmale

• Speziell geeignet für Anwendungen im Bereich

von 450 nm bis 1120 nm

• Hohe Linearität

• Hermetisch dichte Metallbauform (TO-18) mit

Basisanschluß, geeignet bis 125 °C

• Gruppiert lieferbar

Anwendungen

• Lichtschranken für Gleich- und

Wechsellichtbetrieb

• Industrieelektronik

• „Messen/Steuern/Regeln“

Typ

Type Bestellnummer

Ordering Code Typ

Type Bestellnummer

Ordering Code

BPX 38 Q62702-P15 BPX 38-4 Q62702-P15-S4

BPX 38-2/3 Q62702-P3578 BPX 38-4/5 Q62702-P5197

BPX 38-3 Q62702-P15-S3 BPX 38-51)

1) Eine Lieferung in dieser Gruppe kann wegen Ausbeuteschwankungen nicht immer sichergestellt werden.

Wir behalten uns in diese m Fall die Lief erung einer E rsa tzgruppe vor.

1) Supplies out of this group cann ot alw ays be guaranteed due to unfo rs eeable spread of yi eld.

In this case we will reserve us the right of delivering a substitute group.

Q62702-P15-S5

BPX 38-3/4 Q62702-P3579

2001-02-21 2

BPX 38

Grenzwerte

Maximum Ratings

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Betriebs- und Lagertemperatur

Operating and storage temperature range Top; Tstg – 40 …+ 125 °C

Löttemperatur bei Tauchlötung

Lötstelle ≥ 2 mm vom Gehäuse,

Lötzeit t ≤ 5 s

Dip soldering temperature ≥ 2 mm distance

from case bottom, soldering time t ≤ 5 s

TS260 °C

Löttemperatur bei Kolbenlötung

Lötstelle ≥ 2 mm vom Gehäuse,

Lötzeit t ≤ 3 s

Iron soldering temperature ≥ 2 mm distance

from case bottom, soldering time t ≤ 3 s

TS300 °C

Kollektor-Emitterspannung

Collector-emitter voltage VCE 50 V

Kollektorstrom

Collector current IC50 mA

Kollektorspitzenstrom, τ < 10 µs

Collector surge current ICS 200 mA

Emitter-Basisspannung

Emitter-base voltage VEB 7V

Verlustleistung, TA = 25 °C

Total power dissipation Ptot 220 mW

Wärmewiderstand

Thermal resistance RthJA 450 K/W

BPX 38

2001-02-21 3

Kennwerte (TA = 25 °C, λ = 950 nm)

Characteristics

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einheit

Unit

Wellenlänge der max. Fotoempfindlichkeit

Wavelength of max. sensitivity λS max 880 nm

Spektraler Bereich der Fotoempfindlichkeit

S = 10% von Smax

Spectral range of sensitivity

S = 10% of Smax

λ450 …1120 nm

Bestrahlungsempfindl iche Fläche

Radiant sensitive area A0.675 mm2

Abmessung der Chipfläche

Dimensions of chip area L × B

L × W1×1mm × mm

Abstand Chipoberfläche zu Gehäuseoberfläche

Distance chip front to case surface H2.05 …2.35 mm

Halbwinkel

Half angle ϕ±40 Grad

deg.

Fotostrom der Kollektor-Basis-Fotodiode

Photocurrent of collector-base photodiode

Ee = 0.5 mW/cm2, VCB = 5 V

Ev = 1000 Ix, Normlicht/standard light A,

VCB = 5 V

IPCB

1.8

5.5 µA

µA

Kapazität

Capacitance

VCE = 0 V, f = 1 MHz, E = 0

VCB = 0 V, f = 1 MHz, E = 0

VEB = 0 V, f = 1 MHz, E = 0

CCE

CCB

CEB

Dunkelstrom

Dark current

VCE = 25 V, E = 0

ICEO 20 (≤ 300) nA

2001-02-21 4

BPX 38

Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern

gekennzeichnet.

The phototransistors are grouped according to their spectral sensitivity and distinguished by

arabian figures.

Bezeichnung

Parameter Symbol

Symbol Wert

Value Einh.

Unit

-2 -3 -4 -5

Fotostrom, λ = 950 nm

Photocurrent

Ee = 0.5 mW/cm2, VCE = 5 V

Ev = 1000 Ix, Normlicht/standard light A,

VCE = 5 V

IPCE

0.2 …0.4

0.95 0.32 …0.63

1.5 0.5 …1.0

2.3 ≥ 0.8

3.6 mA

Anstiegszeit/Abfallzeit

Rise and fall time

IC = 1 mA, VCC = 5 V, RL = 1 kΩ

tr, tf912 1518µs

Kollektor-Emitter-Sättigungsspannung

Collector-emitter saturation voltage

IC = IPCEmin1) × 0.3

Ee = 0.5 mW/cm2

VCEsat 200 200 200 200 mV

Stromverstärkung

Current gain

Ee = 0.5 mW/cm2, VCE = 5 V

170 280 420 650 –

1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe.

1) IPCEmin is the min. phot oc urrent of the spe c ifie d group.

IPCE

IPCB

-----------

BPX 38

2001-02-21 5

Relati ve Sp ectral Sensi ti vi ty

Srel = f (λ)

Output Characteristics

IC = f (VCE), IB = Param eter

Photocurrent

IPCE/IPCE25o = f (TA), VCE = 5 V

Photocurrent

IPCE = f (Ee), VCE = 5 V

Output Characteristics

IC = f (VCE), IB = Parameter

Dark Current

ICEO/ICEO25o = f (TA), VCE = 25 V, E = 0

Total Powe r Dissip ation

Ptot = f (TA)

Dark Current

ICEO = f (VCE), E = 0

Collecto r-E mi tter Capacitan ce

CCE = f (VCE), f = 1 MHz, E = 0

BPX 38

2001-02-21 6

Collector-Base Ca p aci tan ce

CCB = f (VCB), f = 1 MHz, E = 0

Directional Chara cter i sti cs

Srel = f (ϕ)

Emitter-Base Capacitance

CEB = f (VEB), f = 1 MHz, E = 0

BPX 38

2001-02-21 7

Maßzeichnung

Package Outlines

Maße werden wi e fo lgt angegeben: m m (inc h) / Dim ensions are specified as follo w s: m m (inc h).

Published by OSRAM Opto Semiconductors GmbH & Co. OHG

Wernerwerkstrasse 2, D-93049 Regensburg

Attention please!

The inform at ion describe s the type of component and sha ll not be c ons idered as assur ed characteris tics .

Terms of delivery and rights to change design reserved. Due to technical requirements components may contain

dangerous substances. For information on the types in question please contact our Sales Organization.

Packing

Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.

By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing

material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs

incurred.

Components used in life-support devices or systems must be expressly authorized for such purpose! Critical

components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.

1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted

to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.

2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain

and sust ain human life. If th ey fail , it is rea so nable to assum e th at the health of the user may be endangered.

ø5.6 (0.220)

ø5.3 (0.209)

2.54 (0.100)

spacing

ø4.8 (0.189)

E C B

(2.7 (0.106))

5.3 (0.209)

5.0 (0.197)

14.5 (0.571)

12.5 (0.492)

ø0.45 (0.018)

Radiant

GMOY6018

Approx. weight 1.0 g

ø4.6 (0.181)

5.0 (0.197)

5.5 (0.217)

Chip position sensitive area

0.9 (0.035)

1.1 (0.043)

0.9 (0.035)