All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 17 Rev. 05, 2011-04-01
PTFA220081M
Confidential, Limited Internal Distribution
RF Characteristics
Two-tone Measurements (not subject to production test – veried by design / characterization in Inneon test xture)
VDD = 28 V, IDQ = 100 mA, POUT = 8 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps — 17 — dB
Drain Efciency hD — 38 — %
Intermodulation Distortion IMD — –31 — dBc
High Power RF LDMOS Field Effect Transistor
8 W, 700 – 2200 MHz
Description
The PTFA220081M an unmatched 8-watt LDMOS FET suitable for
power ampliers applications with frequencies from 700 MHz to 2200
MHz. This LDMOS transistor offers excellent gain, efciency and
linearity performance in a small overmolded plastic package.
PTFA220081M
Package PG-SON-10
Features
• Typical two-carrier WCDMA performance,
8 dB PAR
- POUT = 33 dBm Avg
- ACPR = –40 dBc
• Typical CW performance, 940 MHz, 28 V
- POUT = 40 dBm
- Efciency = 59%
- Gain = 20 dB
• Typical CW performance, 2140 MHz, 28 V
- POUT = 40 dBm
- Efciency = 50%
- Gain = 15 dB
• Capable of handling 10:1 VSWR @ 28 V, 8 W
(CW) output power
• Integrated ESD protection
• Excellent thermal stability
• Pb-free and RoHS compliant
0
10
20
30
40
50
-60
-50
-40
-30
-20
-10
34 35 36 37 38 39 40 41
Efficiency (%)
IMD (dBc)
Output Power, PEP (dBm)
Two-tone Drive-up
V
DD
= 28 V, I
DQ
= 100 mA,
ƒ
1
= 939.5 MHz, ƒ
2
= 940.5 MHz
Efficiency
IMD 3rd
IMD 5th
Data Sheet 2 of 17 Rev. 05, 2011-04-01
PTFA220081M
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (not subject to production test – veried by design / characterization in Inneon test xture)
VDD = 28 V, IDQ = 100 mA, POUT = 8 W PEP, ƒ = 940 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps — 20.7 — dB
Drain Efciency hD — 39 — %
Intermodulation Distortion IMD — –30 — dBc
Input Return Loss IRL — 20 — dB
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 µA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 A RDS(on) — 1.10 — W
Operating Gate Voltage VDS = 28 V, IDQ = 100 mA VGS 2.0 2.5 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ 175 °C
Storage Temperature Range TSTG –65 to +150 °C
Thermal Resistance (TCASE = 70°C, 8 W DC ) RqJC 4.2 °C/W
Moisture Sensitivity Level
Level Test Standard Package Temperature Unit
3 IPC/JEDEC J-STD-020 260 °C
Ordering Information
Type Package Outline Package Description Shipping
PTFA220081M V4 PG-SON-10 Molded plastic, SMD Tape & Reel, 500 pcs
PTFA220081M
Confidential, Limited Internal Distribution
Data Sheet 3 of 17 Rev. 05, 2011-04-01
Typical Performance, 940 MHz
Drain Efficiency (%)
IMD & ACPR (dBc)
Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 100 mA, ƒ = 940 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
Efficiency
ACPR
IMD Up
IMD Low
20
30
40
50
60
70
18.8
19.2
19.6
20.0
20.4
20.8
34 35 36 37 38 39 40 41
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
Power Sweep, CW
Gain & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 100 mA
Efficiency
920 MHz
940 MHz
960 MHz
Gain
Efficiency
920 MHz
940 MHz
960 MHz
Gain
10
20
30
40
50
60
19.0
19.5
20.0
20.5
21.0
21.5
29 30 31 32 33 34 35 36 37 38 39
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
Two-carrier WCDMA 3GPP
V
DD
= 28 V, I
DQ
= 100 mA, ƒ = 940 MHz
3GPP WCDMA, P/AR = 8:1, 10 MHz carrier
spacing, BW 3.84 MHz
Efficiency
Gain
10
20
30
40
50
18
19
20
21
22
33 34 35 36 37 38 39 40 41
Efficiency (%)
Gain (dB)
Output Power, PEP (dBm)
Two-tone Drive-up
V
DD
= 28 V, I
DQ
= 150 mA,
ƒ
1
= 939.5 MHz, ƒ
2
= 940.5 MHz
Efficiency
Gain
Data Sheet 4 of 17 Rev. 05, 2011-04-01
PTFA220081M
Confidential, Limited Internal Distribution
Typical Performance, 940 MHz (cont.)
Broadband Circuit Impedance
Frequency Z Source W Z Load W
MHz R jX R jX
869 1.54 7.20 14.11 9.10
894 1.49 6.60 14.91 8.70
920 1.59 5.70 13.83 9.10
940 1.61 5.10 10.83 10.70
960 1.61 5.10 13.34 9.80
1930 1.91 –2.10 5.59 6.20
1990 2.11 –1.70 4.21 5.20
2110 2.45 –1.00 4.43 5.10
2170 2.30 –1.00 4.25 5.60
Z0 = 50 W
Z Source Z Load
G
S
D
-30
-27
-24
-21
-18
-15
-12
-9
-6
17.0
17.5
18.0
18.5
19.0
19.5
20.0
20.5
21.0
880 900 920 940 960 980 1000
Input Return Loss (dB)
Power Gain (dB)
Frequency (MHz)
Two-tone Gain & Input Return Loss
V
DD
= 28 V, IDQ = 100 mA, Spacing = 100 kHz,
PEP = 8 W
IRL
Gain
PTFA220081M
Confidential, Limited Internal Distribution
Data Sheet 5 of 17 Rev. 05, 2011-04-01
Reference Circuit, 920 – 960 MHz
Reference circuit input schematic for ƒ = 920 – 960 MHz
Reference circuit output schematic for ƒ = 920 – 960 MHz
12
3
TL101
R101
1300 Ohm
C101
1000 pF
R102
1200 Ohm
C102
1000 pF
R103
2000 Ohm
R104
10 Ohm
TL102
C103
1000 pF
TL103
TL104
TL105 TL106
TL107
TL108
TL109
1
2
3
4
TL110
PORT
3
C
B
E
1
2
3
4
S4
In Out
NC NC
1
2 3
45
6 7
8
S5
3
S3
1 2
3
4
S2
R105
1.3 Ohm
12
3
TL111
12
3
TL112
C104
16 pF
C105
68 pF
L1
22 nH
C106
5.6 pF
C107
16 pF
R106
510 Ohm
R107
10 Ohm
TL113 TL114
a080304m_960 MHz_bdin_06-03-2010
RF_IN GATE_DUT
VDD
RF_OUT
R201
0 Ohm
12
3
TL201
1
2
3
TL202
TL203
TL204
TL205
TL206
C201
3.6 pF
TL207
TL208
12
3
TL209 TL210
TL211
TL212
TL213
C202
68 pF
C203
68 pF
TL214
12
3
TL215
TL216
TL217
TL218
TL219 TL220
1 2
3
TL221
TL222
C204
10000000 pF
1
2
3
TL223
C205
4710000 pF
12
3
TL224
1
2
3
TL225
a080304m_960 MHz_bdout_06-03-2010
DRAIN_DUT
V
DD
Data Sheet 6 of 17 Rev. 05, 2011-04-01
PTFA220081M
Confidential, Limited Internal Distribution
Reference Circuit, 920 – 960 MHz (cont.)
Electrical Characteristics at 960 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Input
TL101 0.004 λ, 51.98 W W1 = 1.087, W2 = 1.087, W3 = 0.813 W1 = 43, W2 = 43, W3 = 32
TL102 0.024 λ, 51.98 W W = 1.087, L = 4.445 W = 43, L = 175
TL103 0.011 λ, 51.98 W W = 1.087, L = 2.057 W = 43 L = 81
TL104 W = 1.524 W = 60
TL105 0.008 λ, 54.17 W W = 1.016, L = 1.524 W = 40, L = 60
TL106 0.027 λ, 41.75 W W = 1.524, L = 5.080 W = 60, L = 200
TL107 0.010 λ, 25.04 W W = 3.048, L = 1.778 W = 120, L = 70
TL108 0.003 λ, 41.75 W W = 1.524, L = 0.508 W = 60, L = 20
TL109 0.007 λ, 41.75 W W = 1.524, L = 1.270 W = 60, L = 50
TL110 W1 = 3.048, W2 = 0.762, W3 = 3.048, W4 = 0.762 W1 = 120, W2 = 30, W3 = 120, W4 = 30
TL111, TL112 0.005 λ, 51.98 W W1 = 1.087, W2 = 1.087, W3 = 1.016 W1 = 43, W2 = 43, W3 = 40
TL113 0.017 λ, 51.98 W W = 1.087, L = 3.264 W = 43, L = 129
TL114 0.070 λ, 51.98 W W = 1.087, L = 13.259 W = 43, L = 522
Output
TL201 0.008 λ, 41.75 W W1 = 1.524, W2 = 1.524, W3 = 1.524 W1 = 60, W2 = 60, W3 = 60
TL202, TL225 0.007 λ, 47.12 W W1 = 1.270, W2 = 1.270, W3 = 1.270 W1 = 50, W2 = 50, W3 = 50
TL203 0.060 λ, 47.12 W W = 1.270, L = 11.361 W = 50, L = 447
TL204 W1 = 0.020, W2 = 0.020, Offset = 0.007 W1 = 20, W2 = 780, Offset = 280
TL205 0.007 λ, 4.74 W W = 20.119, L = 1.270 W = 792, L = 50
TL206 W1 = 0.001, W2 = 0.001, Offset = 0.011 W1 = 1, W2 = 50, Offset = 416
TL207 0.003 λ, 41.75 W W = 1.524, L = 0.508 W = 60, L = 20
TL208 0.008 λ, 41.75 W W = 1.524, L = 1.524 W = 60, L = 60
TL209 0.004 λ, 25.04 W W1 = 3.048, W2 = 3.048, W3 = 0.762 W1 = 120, W2 = 120, W3 = 30
TL210 W1 = 1.087, W2 = 3.048 W1 = 43, W2 = 120
TL211 0.010 λ, 25.04 W W = 3.048, L = 1.778 W = 120, L = 70
TL212 0.007 λ, 63.89 W W = 0.762, L = 1.270 W = 30, L = 50
TL213 W1 = 0.001, W2 = 0.005, Offset = -0.002 W1 = 1, W2 = 208, Offset = -79
TL214 0.044 λ, 41.75 W W = 1.524, L = 8.204 W = 60, L = 323
TL215 0.007 λ, 41.75 W W1 = 1.524, W2 = 1.524, W3 = 1.270 W1 = 60, W2 = 60, W3 = 50
TL216 0.007 λ, 47.12 W W = 1.270, L = 1.267 W = 50, L = 50
TL217 0.032 λ, 47.12 W W = 1.270, L = 5.918 W = 50, L = 233
TL218 0.032 λ, 15.92 W W = 5.283, L = 5.687 W = 208, L = 224
TL219 0.016 λ, 51.98 W W = 1.087, L = 2.946 W = 43, L = 116
TL220 0.017 λ, 51.98 W W = 1.087, L = 3.264 W = 43, L = 129
TL221 0.004 λ, 51.98 W W1 = 1.087, W2 = 1.087, W3 = 0.813 W1 = 43, W2 = 43, W3 = 32
TL222 0.104 λ, 51.98 W W = 1.087, L = 19.736 W = 43, L = 777
TL223 0.011 λ, 47.12 W W1 = 1.270, W2 = 1.270, W3 = 2.032 W1 = 50, W2 = 50, W3 = 80
TL224 0.000 λ, 144.35 W W1 = 0.025, W2 = 0.025, W3 = 0.025 W1 = 1, W2 = 1, W3 = 1
PTFA220081M
Confidential, Limited Internal Distribution
Data Sheet 7 of 17 Rev. 05, 2011-04-01
Reference Circuit, 920 – 960 MHz (cont.)
Reference circuit assembly diagram (not to scale)*
PTFA220081M_01_CUS 960 MHz
RO4350, .020 (73)
� � � �� �� � � � � � � � � � � � �� � � �� �
C105
RF_IN RF_OUT
VDD
C106
C102
C103
C104
C107
R105
R107
R102
R103
R201
R104
R106
S2
L1
R101
C101
C205
C204
C202
C201 C203
S3
DUT
S4
S5
* Gerber Files for this circuit available on request
Data Sheet 8 of 17 Rev. 05, 2011-04-01
PTFA220081M
Confidential, Limited Internal Distribution
Reference Circuit, 920 – 960 MHz (cont.)
Circuit Assembly Information
DUT PTFA220081M LDMOS Transistor
PCB LTN/PTFA220081M–9 0.508 mm [.020"] thick, er = 3.48 Rogers 4350, 1 oz. copper
Component Description Suggested Manufacturer P/N
Input
C101, C102, C103 Chip capacitor, 1000 pF Digi-Key PCC1772CT-ND
C104, C107 Chip capacitor, 16 pF ATC ATC100A160JW150X
C105 Chip capacitor, 68 pF ATC ATC100A680JW150X
C106 Chip capacitor, 5.6 pF ATC ATC100A5R6CW150X
L1 Inductor, 22 nH ATC ATC0805WL22JT
R101 Resistor, 1300 W Digi-Key P1.3KGCT-ND
R102 Resistor, 1200 W Digi-Key P1.2KGCT-ND
R103 Resistor, 2000 W Digi-Key P2.0KECT-ND
R104 Resistor, 10 W Digi-Key P10ECT-ND
R105 Resistor, 1.3 W Digi-Key P1.3GET-ND
R106 Resistor, 510 W Digi-Key P510ECT-ND
R107 Resistor, 10 W Digi-Key P10GCT-ND
S2 EMI lter, 2 - 4 A, 0.1 - 2.2 μF Murata NFM18PS105R0J3
S3 Potentiometer, 2k W Digi-Key 3224W-202ECT-ND
S4 Transistor Digi-Key BCP56
S5 Voltage Regulator National Semiconductor LM7805
Output
C201 Chip capacitor, 3.6 pF ATC ATC100A3R6CW150X
C202, C203 Chip capacitor, 68 pF ATC ATC100A680JW150X
C204 Capacitor, 10 μF Digi-Key 587-1352-1-ND
C205 Chip capacitor, 4.71 μF Digi-Key PCS3475CT-ND
R201 Resistor, 0 W Digi-Key P0.0ECT-ND
PTFA220081M
Confidential, Limited Internal Distribution
Data Sheet 9 of 17 Rev. 05, 2011-04-01
Typical Performance, 2140 MHz
20
25
30
35
40
45
50
55
60
65
13
14
15
16
17
18
19
20
21
22
32 33 34 35 36 37 38 39 40 41
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
CW
Gain & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 100 mA, ƒ = 2140 MHz
Gain +85°C
Gain +20°C
Gain -30°C
Efficiency +85°C
Efficiency +20°C
Efficiency -30°C
0
10
20
30
40
50
15.5
16.0
16.5
17.0
17.5
18.0
27 28 29 30 31 32 33 34 35 36
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
Two-carrier WCDMA 3GPP
V
DD
= 28 V, I
DQ
= 100 mA, ƒ = 2140 MHz,
3GPP WCDMA, P/AR = 8:1,
10 MHz carrier spacing, BW 3.84 MHz
Gain
Efficiency
0
10
20
30
40
50
-50
-40
-30
-20
-10
0
27 28 29 30 31 32 33 34 35 36
Drain Efficiency (%)
IMD & ACPR (dBc)
Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 100 mA, ƒ = 2140 MHz
3GPP WCDMA, P/AR = 8:1,
10 MHz carrier spacing, BW 3.84 MHz
Efficiency
ACPR
IMD Up
IMD Low
15
25
35
45
55
65
15.0
15.5
16.0
16.5
17.0
17.5
31 32 33 34 35 36 37 38 39 40 41
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
Power Sweep, CW
Gain & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 100 mA
Efficiency
Gain
2110 MHz
2140 MHz
2170 MHz
Data Sheet 10 of 17 Rev. 05, 2011-04-01
PTFA220081M
Confidential, Limited Internal Distribution
Typical Performance, 2140 MHz (cont.)
10
20
30
40
50
-50
-40
-30
-20
-10
33 34 35 36 37 38 39 40 41
Efficiency (%)
IMD (dBc)
Output Power, PEP (dBm)
Two-tone Drive-up
V
DD
= 28 V, I
DQ
= 100 mA,
ƒ
1
= 2139.5 MHz, ƒ
2
= 2140.5 MHz
Efficiency
IMD3
20
25
30
35
40
45
50
15.0
15.5
16.0
16.5
17.0
17.5
18.0
35 36 37 38 39 40 41
Efficiency (%)
Gain (dB)
Output Power, PEP (dBm)
Two-tone Drive-up
V
DD
= 28 V, I
DQ
= 100 mA,
ƒ
1
= 2139.5 MHz, ƒ
2
= 2140.5 MHz
Efficiency
Gain
-50
-45
-40
-35
-30
-25
-20
-15
10
15
20
25
30
35
40
45
2040 2080 2120 2160 2200 2240
IMD (dBc)
Efficiency (%)
Frequency (MHz)
Two-tone Broadband
Efficiency & IMD vs. Frequency
V
DD
= 28 V, I
DQ
= 100 mA, Average PEP = 8 W,
Spacing = 100 kHz
Efficiency
IMD3
IMD5
-12
-10
-8
-6
-4
-2
0
12
13
14
15
16
17
18
2040 2080 2120 2160 2200 2240
Return Loss (dB)
Gain (dB)
Frequency (MHz)
Two-tone Broadband
Gain & Return Loss vs. Frequency
V
DD
= 28 V, I
DQ
= 100 mA, Average PEP = 8 W,
Spacing = 100 kHz
Gain
RL
PTFA220081M
Confidential, Limited Internal Distribution
Data Sheet 11 of 17 Rev. 05, 2011-04-01
Typical Performance, 2140 MHz (cont.)
16.0
16.5
17.0
17.5
18.0
33 34 35 36 37 38 39 40 41
Power Gain (dB)
Output Power (dBm)
Two-tone Gain vs. Output Power
V
DD
= 28 V, ƒ
1
= 2139.5 MHz, ƒ
2
= 2140.5 MHz
I
DQ
= 80 mA
I
DQ
= 120 mA
I
DQ
= 100 mA
-60
-50
-40
-30
-20
35 36 37 38 39 40 41
IMD (dBc)
Output Power, PEP (dBm)
Intermodulation Distortion vs.
Output Power
V
DD
= 28 V, I
DQ
= 100 mA,
ƒ
1
= 2139.5 MHz, ƒ
2
= 2140.5 MHz
3rd Order
7th
5th
IMD (dBc)
Tone Spacing (MHz)
Intermodulation Distortion vs.
Tone Spacing
V
DD
= 28 V, I
DQ
= 100 mA, ƒ = 2140 MHz,
PEP = 8 W
3rd Order
7th
5th
Data Sheet 12 of 17 Rev. 05, 2011-04-01
PTFA220081M
Confidential, Limited Internal Distribution
Reference Circuit, 2110 – 2170 MHz
Reference circuit input schematic for ƒ = 2110 – 2170 MHz
Reference circuit output schematic for ƒ = 2110 – 2170 MHz
TL103
C104
6.2 pF
C105
6.2 pF
TL105
TL107
TL108
TL109
1
2
3
4
TL110
C110
6.2 pF
C109
0.6 pF
12
3
TL113TL114
C107
3.6 pF
12
3
TL111
C106
12 pF
R106
510 Ohm
L1
22 nH
C101
1000 pF
R103
1200 Ohm
C102
1000 pF
C103
1000 pF
R101
1300 Ohm
R104
2000 Ohm
R102
10 Ohm
R105
10 Ohm
TL101 TL102
PORT
3
RF_IN
C
B
E
1
2
3
4
S4
In Out
NC NC
1
2 3
45
6 7
8
S5
3
S3
1 2
3
4
S2
C108
4.1 pF
1
2
3
4
TL112
1
2
3
4
TL115
C111
6.2 pF
TL104
TL106
a080304m_2170 MHz_bdin_06-03-2010
GATE_DUT
V
DD
12
3
TL202 TL203
TL201
TL222
1
2
3
TL213
TL214
TL215
TL216
TL217
TL218
12
3
TL220
TL219
TL204
TL205
TL206 TL207
1 2
3
TL208
TL209
C203
3.6 pF
TL210
TL211
C205
10000000 pF
TL225
1
2
3
TL226
C204
10 pF
C201
12 pF
C202
0.3 pF
12
3
TL221
TL223
1
2
3
TL224
R201
0 Ohm
12
3
TL212
a080304m_2170 MHz_bdout_06-03-2010
RF_OUT
DRAIN_DUT
VDD
PTFA220081M
Confidential, Limited Internal Distribution
Data Sheet 13 of 17 Rev. 05, 2011-04-01
Reference Circuit, 2110 – 2170 MHz (cont.)
Electrical Characteristics at 2170 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Input
TL101 0.054 λ, 51.98 W W = 1.087, L = 4.509 W = 43, L = 178
TL102 0.150 λ, 51.98 W W = 1.087, L = 12.548 W = 43, L = 494
TL103 0.027 λ, 51.98 W W = 1.087, L = 2.261 W = 43, L = 89
TL104 W = 1.524 W = 60
TL105 0.062 λ, 41.75 W W = 1.524, L = 5.080 W = 60, L = 200
TL106 0.018 λ, 54.17 W W = 1.016, L = 1.524 W = 40, L = 60
TL107 0.022 λ, 25.04 W W = 3.048, L = 1.778 W = 120, L = 70
TL108 0.006 λ, 41.75 W W = 1.524, L = 0.508 W = 60, L = 20
TL109 0.015 λ, 41.75 W W = 1.524, L = 1.270 W = 60, L = 50
TL110 W1 = 3.048, W2 = 0.762, W3 = 3.048, W4 = 0.762 W1 = 120, W2 = 30, W3 = 120, W4 = 30
TL111, TL113 0.012 λ, 51.98 W W1 = 1.087, W2 = 1.087, W3 = 1.016 W1 = 43, W2 = 43, W3 = 40
TL112 W1 = 1.087, W2 = 1.016, W3 = 1.087, W4 = 1.016 W1 = 43, W2 = 40, W3 = 43, W4 = 40
TL114 0.028 λ, 51.98 W W = 1.087, L = 2.311 W = 43, L = 91
TL115 W1 = 1.087, W2 = 1.016, W3 = 1.087, W4 = 1.016 W1 = 43, W2 = 40, W3 = 43, W4 = 40
Output
TL201 0.022 λ, 25.04 W W = 3.048, L = 1.778 W = 120, L = 70
TL202 0.010 λ, 25.04 W W1 = 3.048, W2 = 3.048, W3 = 0.762 W1 = 120, W2 = 120, W3 = 30
TL203 W1 = 1.087, W2 = 3.048 W1 = 43, W2 = 120
TL204 0.071 λ, 47.12 W W = 1.270, L = 5.918 W = 50, L = 233
TL205 0.072 λ, 15.92 W W = 5.283, L = 5.687 W = 208, L = 224
TL206 0.230 λ, 51.98 W W = 1.087, L = 19.202 W = 43, L = 756
TL207 0.039 λ, 51.98 W W = 1.087, L = 3.264 W = 43, L = 129
TL208 0.012 λ, 51.98 W W1 = 1.087, W2 = 1.087, W3 = 1.016 W1 = 43, W2 = 43, W3 = 40
TL209 0.032 λ, 51.98 W W = 1.087, L = 2.642 W = 43, L = 104
TL210 0.006 λ, 41.75 W W = 1.524, L = 0.508 W = 60, L = 20
TL211 0.018 λ, 41.75 W W = 1.524, L = 1.524 W = 60, L = 60
TL212 0.018 λ, 41.75 W W1 = 1.524, W2 = 1.524, W3 = 1.524 W1 = 60, W2 = 60, W3 = 60
TL213 0.015 λ, 47.12 W W1 = 1.270, W2 = 1.270, W3 = 1.270 W1 = 50, W2 = 50, W3 = 50
TL214 0.035 λ, 47.12 W W = 1.270, L = 2.896 W = 50, L = 114
TL215 W1 = 0.020, W2 = 0.020, Offset = 0.007 W1 = 20, W2 = 780, Offset = 280
TL216 0.017 λ, 4.74 W W = 20.119, L = 1.270 W = 792, L = 50
TL217 W1 = 0.001, W2 = 0.005, Offset = -0.002 W1 = 1, W2 = 208, Offset = -79
TL218 0.099 λ, 41.75 W W = 1.524, L = 8.204 W = 60, L = 323
TL219 0.015 λ, 47.12 W W = 1.270, L = 1.267 W = 50, L = 50
TL220 0.015 λ, 41.75 W W1 = 1.524, W2 = 1.524, W3 = 1.270 W1 = 60, W2 = 60, W3 = 50
TL221 0.008 λ, 51.98 W W1 = 1.087, W2 = 1.087, W3 = 0.635 W1 = 43, W2 = 43, W3 = 25
TL222 0.015 λ, 63.89 W W = 0.762, L = 1.270 W = 30, L = 50
TL223 W1 = 0.001, W2 = 0.001, Offset = 0.011 W1 = 1, W2 = 50, Offset = 416
Table continued next page
Data Sheet 14 of 17 Rev. 05, 2011-04-01
PTFA220081M
Confidential, Limited Internal Distribution
Reference Circuit, 2110 – 2170 MHz (cont.)
Reference circuit assembly diagram (not to scale)*
PTFA220081M_01_CUS 2170 MHz RO4350, .020 (73)
� � � � �� � � � � � � � � � �� � � � � �� �
1
DUT
C202
C203 C201
R201
C204
C205
S5
S3
S4
C101
R101
C109 C105
R104
C103 C102
R103
R102
R106
C107
C104 C111
C110
C108
R105
C106
RF_IN RF_OUT
V
DD
S2
Reference Circuit, 2110 – 2170 MHz (cont.)
Electrical Characteristics at 2170 MHz (cont.)
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
TL224 0.015 λ, 47.12 W W1 = 1.270, W2 = 1.270, W3 = 1.270 W1 = 50, W2 = 50, W3 = 50
TL225 0.111 λ, 47.12 W W = 1.270, L = 9.225 W = 50, L = 363
TL226 0.015 λ, 47.12 W W1 = 1.270, W2 = 1.270, W3 = 1.270 W1 = 50, W2 = 50, W3 = 50
* Gerber Files for this circuit available on request
PTFA220081M
Confidential, Limited Internal Distribution
Data Sheet 15 of 17 Rev. 05, 2011-04-01
Reference Circuit, 2110 – 2170 MHz (cont.)
Circuit Assembly Information
DUT PTFA220081M LDMOS Transistor
PCB LTN/PTFA220081M 0.508 mm [.020"] thick, er = 3.48 Rogers 4350, 1 oz. copper
Component Description Suggested Manufacturer P/N
Input
C101, C102, C103 Chip capacitor, 1000 pF ATC PCC1772CT-ND
C104, C105, C110, C111 Chip capacitor, 6.2 pF ATC ATC100A6R2CW150X
C106 Chip capacitor, 12 pF ATC ATC100A120FJW150X
C107 Chip capacitor, 3.6 pF ATC ATC100A3R6CW150X
C108 Chip capacitor, 4.1 pF ATC ATC100A4R1CW150X
C109 Chip capacitor, 0.6 pF ATC ATC100A0R6CW150X
L1 Inductor, 22 nH ATC ATC0805WL22JT
R101 Resistor, 1300 W Digi-Key P1.3KGCT-ND
R102 Resistor, 10 W Digi-Key P10ECT-ND
R103 Resistor, 1200 W Digi-Key P1.2KGCT-ND
R104 Resistor, 2000 W Digi-Key P2.0KECT-ND
R105 Resistor, 10 W Digi-Key P10GCT-ND
R106 Resistor, 510 W Digi-Key P510ECT-ND
S2 EMI lter, 2 - 4 A, 0.1 - 2.2 μF Digi-Key NFM18PS105R0J3
S3 Potentiometer, 2k W Digi-Key 3224W-202ECT-ND
S4 Transistor Digi-Key BCP56
S5 Voltage Regulator National Semiconductor LM7805
Output
C201 Chip capacitor, 12 pF ATC ATC100A120CW150X
C202 Chip capacitor, 0.3 pF ATC ATC100A0R3CW150X
C203 Chip capacitor, 3.6 pF ATC ATC100A3R6CW150X
C204 Chip capacitor, 10 pF ATC ATC100A100CW150X
C205 Capacitor, 10 μF Digi-Key 587-1352-1-ND
R201 Resistor, 0 W Digi-Key P0.0ECT-ND
Data Sheet 16 of 17 Rev. 05, 2011-04-01
PTFA220081M
Confidential, Limited Internal Distribution
Package Outline Specications
Package PG-SON-10
Diagram Notes—unless otherwise specied:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.1 [.004] unless specied otherwise.
4. Package dimension: 4.00 mm x 4.00 mm x 1.42 mm.
5. Pins: S = source, 1 – 5 = gate, 6 – 10 = drain.
6. NiPdAu plating (gold top layer): 0.025 – 0.127 micron [1 – 5 microinch].
Find the latest and most complete information about products and packaging at the Inneon Internet page
TOP VIEW
4.00
[.157]
4.00
[.157]
INDEX
MARKING
BOTTOM VIEW
5 4 3 2 1
6 7 8 9 10
5X .515
[.0203] 2 PLACES
2.37
[.093]
0.54
[.021] 2 PLACES
5X .320
[.0126] 2 PLACES
.815
[.0321]
0.30
[.012]
3.40
[.134]
INDEX
MARKING
4X 0.65
[.026] 2 PLACES
2.97
[.117]
S
SIDE VIEW
0.38
[.015] BOTH SIDES
1.42
[.056]
0.05 [.002]
PG-SON-10_po_02-19-2010
Data Sheet 17 of 17 Rev. 05, 2011-04-01
Edition 2011-04-01
Published by
Inneon Technologies AG
81726 Munich, Germany
© 2010 Inneon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Inneon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Inneon Technologies Ofce (www.inneon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Inneon Technologies Ofce.
Inneon Technologies components may be used in life-support devices or systems only with the express written approval of
Inneon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended
to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@inneon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
PTFA220081M V4
Condential, Limited Internal Distribution
Revision History: 2011-04-01 Data Sheet
Previous Version: 2010-06-09, Data Sheet
Page Subjects (major changes since last revision)
1 Updated ESD protection feature
3, 9 Removed CW performance at selected drain voltages graphs