〈SMALL-SIGNAL TRANSISTOR〉
ISA1530AC1 ISA1603AM1
FOR LOW FREQUENCY AMPLIFY APPLICATION
.
SILICON PNP EPITAXIAL TYPE
DESCRIPTION OUTLINE DRAWING UNIT：mm
ISA1530AC1 ISA1603AM1
ISA1530AC1 ISA1603AM1 is super mini
package resin sealed silicon PNP epitaxial type
transistor.
These are designed for low frequency voltage
amplify application .
FEATURE
・Excellent linearity of DC forward current gain.
・Small collector to emitter saturation voltage
VCE(sat)=-0.3Vmax
APPLICATION
JEITA：SC-59
JEDEC：TO-236 resemblance
JEITA：SC-70
JEDEC：－
For small type machine low frequency voltage
amplify application.
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
MAXIMUM RATINGS（Ta=25℃）
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Limits
Symbol Parameter Test conditions Min Ave Max UNIT
Ｖ（ＢＲ）ＣＥＯ Collector to Emitter Breakdown voltage I C
=-100μA，RBE=∞ -50 V
Ｉ ＣＢＯ
Collector cut off current VCB=-60V，I E
=0 -0.1 μA
Ｉ EＢＯ
Emitter cut off current VEB=-4V，I C
=0 -0.1 μA
ｈＦＥ* DC forward current gain VCE=-6V，I C
=-1mA 120 560 －
ｈＦＥ DC forward current gain VCE=-6V，I C
=-0.1mA 70 －
ＶＣＥ（ｓａｔ） Collector to Emitter saturation voltage I C
=-100mA，I B
=-10mA -0.3 V
ｆＴ Gain bandwidth product VCE=-6V，I E
=10mA 200 MHz
Cob Collector output capacitance VCB=-6V，I E
=0,f=1MHz 4.0 pF
NF Noise figure VCE=-6V，I E
=0.3mA
f=100Hz，RG=10kΩ 20 dB
0.16
0.8
1.1
0.4
0.5
1.5
0.5
2.5
0.95 0.95
1.90
2.9
①
②③
0.15
0.7
0.9
0.3
1.250.425
2.1
0.65 0.65
1.3
2.0
①
② ③
0.425
0～0.1
0～0.1
Ratings
Symbol Parameter ISA1530AC1 ISA1603AM1 UNIT
ＶＣＢＯ Collector to Base voltage -60 V
ＶＥＢＯ Collector to Emitter voltage -6 V
ＶＣＥＯ Emitter to Base voltage -50 V
Ｉ Ｃ
Collector current -150 mA
ＰＣ Collector dissipation 200 mW
Ｔｊ Junction temperature +150 ℃
Ｔｓｔｇ Storage temperature -55～+150 ℃
MARKING
T R
.
*：It shows hFE classification in below table. Q R S
ｈFE 120～270 180～390 270～560
〈SMALL-SIGNAL TRANSISTOR〉
ISA1530AC1 ISA1603AM1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
ISAHAYA ELECTRONICS CORPORATION
GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT
0
100
200
300
400
0.1 1 10 100
EMITTER CURRENT IE[mA]
GAIN BAND WIDTH PRODUCT fT[MHz]
VCE=-6V
DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT
10
100
1000
-0.1 -1 -10 -100 -1000
COLLECTOR CURRENT IC[mA]
DC FORWARD CURRENT GAIN hFE
VCE=-6V
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
0
1
10
100
-0.1 -1 -10 -100
COLLECTOR TO BASE VOLTAGE VCB[V]
COLLECTOR OUTPUT CAPACITANCE Cob[pF]
COMMON EMITTER TRANSFER
-0
-10
-20
-30
-40
-50
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0
BASE TO EMITTER VOLTAGE VBE[V]
COLLECTOR CURRENT IC[mA]
VCE=-6V
COLLECTOR DISSIPATION VS AMBIENT TEMPERATURE
0
50
100
150
200
0 50 100 150
AMBIENT TEMPERATURE Ta[℃]
COLLECTOR DISSIPATION Pc[mW]
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
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mishap.
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herein.
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under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
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Jan.2007
