DSP25-12AT
Phase leg
Standard Rectifier
12/4 3
Part number
DSP25-12AT
Backside: anode/cathode
FAV
F
VV1.16
RRM
25
1200
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
TO-268AA (D3Pak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20121218aData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
DSP25-12AT
V = V
A²s
A²s
A²s
A²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.23
R0.9 K/W
R
min.
25
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
135
P
tot
160 WT = 25°C
C
RK/W
25
1200
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Unit
1.47
T = 25°C
VJ
150
V
F0
V0.81T = °C
VJ
175
r
F
13.8 mΩ
V1.16T = °C
VJ
I = A
F
V
25
1.50
I = A
F
50
I = A
F
50
threshold voltage
slope resistance for power loss calculation only
µA
150
V
RRM
V1200
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
10
j
unction capacitance V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
175
300
325
325
315
A
A
A
A
255
275
450
440
1200
FAV
180° sine
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1300
0.15
IXYS reserves the right to change limits, conditions and dimensions. 20121218aData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
DSP25-12AT
Ratings
Product Mar
k
i
n
g
Date Code
Part No.
Logo
abcd
IXYS
Assembly Code
Assembly Line
YYWW Z
DSP25-16AT TO-268AA (D3Pak) (2) 1600
Package
T
VJ
°C
T
stg
°C150
storage temperature -55
Weight g5
Symbol Definition typ. max.min.Conditions
virt ua l j un ctio n temp eratu re
Unit
F
C
N120
mount ing for ce w i th cli p 20
I
RMS
RMS current 70 A
per terminal
175-40
DSP25-16A
DSP25-16AR
TO-247AD (3)
ISOPLUS247 (3)
1600
1600
TO-268AA
(
D3Pak
)
Similar Part Package Voltage class
DSP25-12A TO-247AD (3) 1200
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
DSP25-12AT 403089Tube 30DSP25-12ATStandard
threshold voltage V0.81
mΩ
V
0 max
R
0 max
slope resistance * 11.2
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
175°C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20121218aData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
DSP25-12AT
min max min max
A 4.90 5.10 0.193 0.201
A1 2.70 2.90 0.106 0.114
A2 0.02 0.25 0.001 0.100
b 1.15 1.45 0.045 0.057
b2 1.90 2.10 0.075 0.083
C 0.40 0.65 0.016 0.026
C2 1.45 1.60 0.057 0.063
D 13.80 14.00 0.543 0.551
D1 12.40 12.70 0.488 0.500
E 15.85 16.05 0.624 0.632
E1 13.30 13.60 0.524 0.535
e
H 18.70 19.10 0.736 0.752
L 2.40 2.70 0.094 0.106
L1 1.20 1.40 0.047 0.055
L2 1.00 1.15 0.039 0.045
L3
L4 3.80 4.10 0.150 0.161
0.25 BSC 0.100 BSC
Dim.
Millimeter Inches
5.45 BSC 0.215 BSC
12/4 3
Outlines TO-268AA (D3Pak)
IXYS reserves the right to change limits, conditions and dimensions. 20121218aData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
DSP25-12AT
0.001 0.01 0.1 1
100
200
300
23456789011
10
1
10
2
10
3
0.5 1.0 1.5
0
10
20
30
40
50
60
0 5 10 15 20 25 30
0
10
20
30
40
0 50 100 150 200
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
1.0
0 50 100 150 200
0
20
40
60
80
50 Hz, 80% V
RRM
T
VJ
= 45°C
T
VJ
= 45°C
T
VJ
=150°C
T
VJ
= 150°C
V
R
=0 V
I
F
[A]
V
F
[V]
I
FSM
[A]
t[s]
I
2
t
[A
2
s]
t [ms]
P
tot
[W]
I
F(AV)M
T]A[
amb
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJ
[K/W]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs.
case temperature
Fig. 6 Transient thermal impedance junction to case
t[ms]
Constants for Z
thJC
calculation:
iR
thi
(K/W) t
i
(s)
10.03 0.0004
20.08 0.002
3 0.2 0.003
40.39 0.03
50.2 0.29
T
VJ
= 25°C
R
thJA
:
0.6 KW
0.8 KW
1 KW
2 KW
4 KW
8 KW
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
= 125°C
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20121218aData according to IEC 60747and per semiconductor unless otherwise specified
© 2012 IXYS all rights reserved
