NSV20201LT1G - ON SEMICONDUCTOR

October, 2016 − Rev. 7

1Publication Order Number:

NSS20201L/D

NSS20201LT1G,

NSV20201LT1G

20 V, 4.0 A, Low VCE(sat)

NPN Transistor

ON Semiconductor’s e2PowerEdge family of low VCE(sat)

transistors are miniature surface mount devices featuring ultra low

saturation voltage (VCE(sat)) and high current gain capability. These

are designed for use in low voltage, high speed switching applications

where affordable efficient energy control is important.

Typical applications are DC−DC converters and power management

in portable and battery powered products such as cellular and cordless

phones, PDAs, computers, printers, digital cameras and MP3 players.

Other applications are low voltage motor controls in mass storage

products such as disc drives and tape drives. In the automotive

industry they can be used in air bag deployment and in the instrument

cluster. The high current gain allows e2PowerEdge devices to be

driven directly from PMU’s control outputs, and the Linear Gain

(Beta) makes them ideal components in analog amplifiers.

Features

•NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Device Package Shipping†

ORDERING INFORMATION

NSS20201LT1G SOT−23

(Pb−Free)

3,000 / Tape & Reel

MARKING DIAGRAM

SOT−23 (TO−236)

CASE 318

STYLE 6

www.onsemi.com

20 VOLTS 4.0 AMPS

NPN LOW VCE(sat) TRANSISTOR

EQUIVALENT RDS(on) 37 mW

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

VD M G

VD = Specific Device Code

M = Date Code*

G= Pb−Free Package

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

COLLECTOR

BASE

EMITTER

(Note: Microdot may be in either location)

NSV20201LT1G SOT−23

(Pb−Free)

3,000 / Tape & Reel

NSS20201LT1G, NSV20201LT1G

www.onsemi.com

MAXIMUM RATINGS (TA = 25°C)

Rating Symbol Max Unit

Collector-Emitter Voltage VCEO 20 Vdc

Collector-Base Voltage VCBO 20 Vdc

Emitter-Base Voltage VEBO 6.0 Vdc

Collector Current − Continuous IC2.0 A

Collector Current − Peak ICM 4.0 A

Electrostatic Discharge ESD HBM Class 3B

MM Class C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation

TA = 25°C

Derate above 25°C

PD (Note 1)

460

3.7

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA (Note 1)

270

°C/W

Total Device Dissipation

TA = 25°C

Derate above 25°C

PD (Note 2)

540

4.3

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA (Note 2)

230

°C/W

Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

1. FR−4 @ 100 mm2, 1 oz. copper traces.

2. FR−4 @ 500 mm2, 1 oz. copper traces.

NSS20201LT1G, NSV20201LT1G

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = 10 mAdc, IB = 0)

V(BR)CEO 20 − −

Vdc

Collector−Base Breakdown Voltage

(IC = 0.1 mAdc, IE = 0)

V(BR)CBO 20 − −

Vdc

Emitter−Base Breakdown Voltage

(IE = 0.1 mAdc, IC = 0)

V(BR)EBO 6.0 − −

Vdc

Collector Cutoff Current

(VCB = 20 Vdc, IE = 0)

ICBO

− − 0.1

mAdc

Emitter Cutoff Current

(VEB = 6.0 Vdc)

IEBO

− − 0.1

mAdc

ON CHARACTERISTICS

DC Current Gain (Note 3)

(IC = 10 mA, VCE = 2.0 V)

(IC = 500 mA, VCE = 2.0 V)

(IC = 1.0 A, VCE = 2.0 V)

(IC = 2.0 A, VCE = 2.0 V)

hFE 200

200

−

360

−

Collector−Emitter Saturation Voltage (Note 3)

(IC = 0.1 A, IB = 0.010 A)

(IC = 1.0 A, IB = 0.100 A)

(IC = 1.0 A, IB = 0.010 A)

(IC = 2.0 A, IB = 0.200 A)

VCE(sat)

−

0.004

0.037

0.060

0.072

0.010

0.050

0.090

0.100

Base −Emitter Saturation Voltage (Note 3)

(IC = 1.0 A, IB = 10 mA)

VBE(sat)

−0.760 0.900

Base −Emitter Turn−on Voltage (Note 3)

(IC = 1.0 A, VCE = 2.0 V)

VBE(on)

−0.760 0.900

Cutoff Frequency

(IC = 100 mA, VCE = 5.0 V, f = 100 MHz)

fT150 − −

MHz

Input Capacitance (VEB = 0.5 V, f = 1.0 MHz) Cibo − − 450 pF

Output Capacitance (VCB = 3.0 V, f = 1.0 MHz) Cobo − − 45 pF

SWITCHING CHARACTERISTICS

Delay (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) td− − 100 ns

Rise (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) tr− − 100 ns

Storage (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) ts− − 500 ns

Fall (VCC = 15 V, IC = 750 mA, IB1 = 15 mA) tf− − 110 ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.

NSS20201LT1G, NSV20201LT1G

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 1. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 2. Collector Emitter Saturation Voltage

vs. Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

1010.10.010.001

0.05

0.1

0.15

0.2

1010.10.010.001

0.05

0.1

0.15

0.2

0.25

Figure 3. DC Current Gain vs. Collector

Current

Figure 4. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

1010.10.010.001

150

200

300

450

500

550

600

1010.10.010.001

0.3

0.4

0.5

0.6

0.7

0.8

1.0

1.1

Figure 5. Base Emitter Turn−On Voltage vs.

Collector Current

Figure 6. Saturation Region

IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA)

1010.10.010.001

0.1

0.2

0.3

0.4

0.5

0.6

0.9

1.0

1001010.10.01

0.2

0.4

0.6

0.8

1.0

VCE(sat), COLLECTOR EMITTER

SATURATION VOLTAGE (V)

VCE(sat), COLLECTOR EMITTER

SATURATION VOLTAGE (V)

hFE, DC CURRENT GAIN

VBE(sat), BASE EMITTER

SATURATION VOLTAGE (V)

VBE(on), BASE EMITTER TURN−ON

VOLTAGE (V)

VCE, COLLECTOR−EMITTER VOLTAGE (V)

IC/IB = 10 150°C

25°C

−55°C

IC/IB = 100 150°C

25°C

−55°C

150°C (5.0 V)

150°C (2.0 V)

25°C (5.0 V)

25°C (2.0 V)

−55°C (5.0 V)

−55°C (2.0 V)

0.9

150°C

25°C

−55°C

150°C

25°C

−55°C

0.7

0.8

IC = 500 mA300 mA

100 mA

10 mA

IC/IB = 10

250

350

VCE = 2.0 V

NSS20201LT1G, NSV20201LT1G

www.onsemi.com

TYPICAL CHARACTERISTICS

100 ms

1 s 1 ms

Thermal Limit

Figure 7. Input Capacitance Figure 8. Output Capacitance

VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V)

6543210

175

200

225

275

300

325

375

425

16121086420

Figure 9. Safe Operating Area

VCE, COLLECTOR EMITTER VOLTAGE (V)

1001010.10.01

0.01

0.1

Cibo, INPUT CAPACITANCE (pF)

Cobo, OUTPUT CAPACITANCE (pF)

IC, COLLECTOR CURRENT (A)

250

350

Cibo(pF) Cobo(pF)

10 ms

400

Single Pulse Test

at Tamb = 25°C

NSS20201LT1G, NSV20201LT1G

www.onsemi.com

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF

THE BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

SOLDERING FOOTPRINT*

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.000

b0.37 0.44 0.50 0.015

c0.08 0.14 0.20 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.30 0.43 0.55 0.012

0.039 0.044

0.002 0.004

0.017 0.020

0.006 0.008

0.114 0.120

0.051 0.055

0.075 0.080

0.017 0.022

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.027

0−−− 10 0 −−− 10

T____

TOP VIEW

SIDE VIEW

END VIEW

2.90

0.80

DIMENSIONS: MILLIMETERS

0.90

PITCH

3X 0.95

RECOMMENDED

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

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NSS20201L/D

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