2N6040 2N6041 2N6042
MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6043 2N6044 2N6045 UNITS
Collector-Base Voltage VCBO 60 80 100 V
Collector-Emitter Voltage VCEO 60 80 100 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 8.0 A
Peak Collector Current ICM 16 A
Base Current IB 120 mA
Power Dissipation PD 75 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJC 1.67 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=Rated VCBO 20 µA
ICEV V
CE=Rated VCEO, VBE(OFF)=1.5V 20 µA
ICEV V
CE=Rated VCEO, VBE(OFF)=1.5V, TC=150°C 200 µA
ICEO V
CE=Rated VCEO 20 µA
IEBO V
EB=5.0V 2.0 mA
BVCEO I
C=100mA (2N6040, 2N6043) 60 V
BVCEO I
C=100mA (2N6041, 2N6044) 80 V
BVCEO I
C=100mA (2N6042, 2N6045) 100 V
VCE(SAT) I
C=4.0A, IB=16mA (2N6040, 2N6041, 2N6043, 2N6044) 2.0 V
VCE(SAT) I
C=3.0A, IB=12mA (2N6042, 2N6045) 2.0 V
VCE(SAT) I
C=8.0A, IB=80mA 4.0 V
VBE(SAT) I
C=8.0A, IB=80mA 4.5 V
VBE(ON) V
CE=4.0V, IC=4.0A 2.8 V
hFE V
CE=4.0V, IC=4.0A (2N6040, 2N6041, 2N6043, 2N6044) 1,000 20,000
hFE V
CE=4.0V, IC=3.0A (2N6042, 2N6045) 1,000 20,000
hFE V
CE=4.0V, IC=8.0A 100
2N6040 2N6041 2N6042 PNP
2N6043 2N6044 2N6045 NPN
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6040 and
2N6043 Series types are Complementary Silicon
Power Transistors, manufactured by the epitaxial
base process, designed for general purpose amplifier
applications.
MARKING: FULL PART NUMBER
TO-220 CASE
R1 (16-November 2009)
www.centralsemi.com