BPV20F
Document Number 81506
Rev. 1.5, 13-Nov-06
Vishay Semiconductors
www.vishay.com
1
948387
Silicon PIN Photodiode
Description
BPV20F is a high speed and high sensitive PIN pho-
todiode in a plastic package with a cylindrical side
view lens. The epoxy package itself is an IR filter,
spectrally matched to GaAs or GaAs/GaAlAs IR emit-
ters (λ p = 950 nm).
Lens radius and chip position are perfectly matched
to the chip size, giving high sensitivity without com-
promising the viewing angle.
In comparison with flat packages the cylindrical lens
package achieves a sensitivity improvement of 20 %.
Features
• Large radiant sensitive area (A = 7.5 mm2)
• Wide viewing angle ϕ = ± 65°
• Improved sensitivity
• Fast response times
• TO-92 plastic package with IR filter
• Filter designed for 950 nm transmission
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Infrared remote control and free air transmission sys-
tems in combination with IR emitter diodes (TSU...- or
TSI...-Series).
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
e4
Parameter Test condition Symbol Value Unit
Reverse Voltage VR60 V
Power Dissipation Tamb ≤ 25 °C PV215 mW
Junction Temperature Tj100 °C
Operating Temperature Range Tamb - 55 to + 100 °C
Storage Temperature Range Tstg - 55 to + 100 °C
Soldering Temperature t ≤ 5 s Tsd 260 °C
Thermal Resistance Junction/
Ambient
RthJA 350 K/W
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Document Number 81506
Rev. 1.5, 13-Nov-06
BPV20F
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Min Typ. Max Unit
Forward Voltage IF = 50 mA VF11.3V
Breakdown Voltage IR = 100 μA, E = 0 V(BR) 60 V
Reverse Dark Current VR = 10 V, E = 0 Iro 230nA
Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD70 pF
Serial Resistance VR = 12 V, f = 1 MHz RS400 Ω
Parameter Test condition Symbol Min Typ. Max Unit
Open Circuit Voltage Ee = 1 mW/cm2, λ = 950 nm Vo360 mV
Temp. Coefficient of VoEe = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K
Short Circuit Current Ee = 1 mW/cm2, λ = 950 nm Ik55 μA
Reverse Light Current Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
Ira 40 60 μA
Temp. Coefficient of Ira Ee = 1 mW/cm2, λ = 950 nm,
VR = 10 V
TKIra 0.1 %/K
Absolute Spectral Sensitivity VR = 5 V, λ = 870 nm s(λ) 0.35 A/W
VR = 5 V, λ = 950 nm s(λ)0.6A/W
Angle of Half Sensitivity ϕ± 6 5 deg
Wavelength of Peak Sensitivity λp950 nm
Range of Spectral Bandwidth λ0.5 870 to 1050 nm
Quantum Efficiency λ = 950 nm η90 %
Noise Equivalent Power VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/√ Hz
Detectivity VR = 10 V, λ = 950 nm D*6 x 1012 cm√Hz/W
Rise Time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr100 ns
Fall Time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf100 ns
Cut-Off Frequency VR = 12 V, RL = 1 kΩ, λ = 870 nm fc4MHz
VR = 12 V, RL = 1 kΩ, λ = 950 nm fc1MHz
BPV20F
Document Number 81506
Rev. 1.5, 13-Nov-06
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics
Tamb = 25 °C unless otherwise specified
Figure 1. Reverse Dark Current vs. Ambient Temperature
Figure 2. Relative Reverse Light Current vs. Ambient Temperature
Figure 3. Reverse Light Current vs. Irradiance
20 40 60 80
1
10
100
1000
100
94 8403
V
R
= 10 V
Tamb - Ambient Temperature (°C)
I
ro
- Reverse Dark Current (nA)
0.6
0.8
1.0
1.2
1.4
94 8409
VR=5V
λ = 950 nm
100806040200
I - Relative Reverse Light Current
T - Ambient Temperature (°C)
amb
ra rel
0.01 0.1 1
0.1
1
10
100
1000
I–Reverse Light Current (µA)
ra
E
e
– Irradiance ( mW/cm
2
)
10
94 8404
V
R
=5V
λ= 950 nm
Figure 4. Reverse Light Current vs. Reverse Voltage
Figure 5. Diode Capacitance vs. Reverse Voltage
Figure 6. Relative Spectral Sensitivity vs. Wavelength
0.1 1 10
1
10
100
V
R
–Reverse Voltage (V)
100
94 8410
I–Reverse Light Current (µA)
ra
1mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
0.02 mW/cm
2
λ= 950 nm
0
20
40
60
80
948407
E=0
f = 1 MHz
CD - Diode Capacitance (pF)
VR - Reverse Voltage (V)
0.1 100
110
750 850 950 1050
0
0.2
0.4
0.6
0.8
1.2
S ( ) - Relative Spectral Sensitivity
rel
- Wavelength (nm)
1150
94 8408
1.0
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Document Number 81506
Rev. 1.5, 13-Nov-06
BPV20F
Vishay Semiconductors
Package Dimensions in mm
Figure 7. Relative Radiant Sensitivity vs. Angular Displacement
0.4 0.2 0 0.2 0.4
S - Relative Sensitivity
rel
0.6
94 8406
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
9612202
BPV20F
Document Number 81506
Rev. 1.5, 13-Nov-06
Vishay Semiconductors
www.vishay.com
5
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It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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