G E SOLID STATE oi vef}sa7soa. ooizea7a ts f 3675081 GE SOLID STATE . O1E 17273. =D 7-33-27 Darlington Power Transistors File Number 1241 0815 8-Ampere N-P-N Darlington Power Transistors 45-60-80 Volts, 70 Watts Gain of 750 at 3A Applications: Features: m Power switching w Operates from IC without predriver # Hammer drivers uw Low leakage at high temperature Series and shunt regulators w= Audio ampliflers The RCA-BD643, 8D645, BD647, and BD648 are monolithic silicon n-p-n Darlington transistors designed for low- and medium-frequency power applica- tions. The high gain of these devices makes It possible for them to be driven directly from integrated circults. These devices are supplied in the JEDEG TO-220AB (VERSAWATT) plastic package. BD643, BD645, BD647, BD649 TERMINAL DESIGNATIONS __. (FLANGE) O TOP VIEW 92CS-39969 JEDEC TO-220AB i | | Oe coo - 7 | r | 8 | 4 ' { | Cc | | | | | b~wn4 I 10 ka 150 ko | Ke _ RESISTANCE VALUES ARE TYPICAL 92CS- 2069183 Fig. 1-Schematic diagram for all types. MAXIMUM RATINGS, Absolute-Maximum Values: BO643 BD645 BDG647 8D649 fe): 10 ee eee 45 60 80 100 Vv Voeo(sus) ber eoareecene eeeeus bce nuneoeennrnes 45 60 80 100 Vv VEBO- cere cet eee e etree nee teeter teenees ___- Vv lo 8 A lom 12 A Pr To < 26C ~$ 62.5 Ww Tg > 25C Derate linearlyO5 Ww wre Tsig: Ty 5to 150 __.. C L - At distances > 1/8 In. (3.17 mm) from case for 10S MAX... ce veneeves Seveenee Peeeeneeoee ee 295 ; E 275 B-12G E SOLID STATE Oh ve ff sazsoax OO172?74 4 i ja7s0ai GE SOLID STATE = SOCSsS:S:~CSE P27: CDI BST Darlington Power Transistors BD643, BD645, BD647, BD649 ELECTRICAL CHARACTERISTICS, At Case Temperature (To) = 25 Unless Otherwise Specified TEST CONDITIONS LIMITS CUR: CHARACTERISTIC VOLTAGE RENT BD643 BD645 UNITS Vde Adc Vosp) Yce | Vee! Ic Min, | Max.| Min. | Max. 20 = 0.5 el 0) 30 ~}||f| | 085 45 _- 0.2 - _ IoBo 60 _ _ _ 02 mA 45 - 2 - - To = 100C 60 _ _ _ 2 'EBO 5| o|;] |2| | 2 ViBRyCEO 0.18) 45) 60 | VippyCBO 0.005 45, 60 | Vv ViBRyEBO le = 2mA 5 8 3 0.59115000} |15000] ' KFE 3 38) 760] | 750 | 3 6a} 7500 7500 VBE 3 34, 2.5 - 2,5 V Voel(sat) gal 2 _ 2 Ip = 12mA tr f= 1 MHz 3 31 cb] | ae | | Mee Rasc | 2 })] [2 | *cw @ Pulsed; pulse duration = 200 ps, duly factor = 1%. b Typical value. NOTE- CURRENT DERATING AT CONSTANT k ACE '$ ONLY TO THE O:SSIFATION- Ba LIMITED PORTION ANO THE Igyy -LIMITED zi PORTION OF MAXIMUM OPERATING AREA fey GURVE. 00 NOT DERATE THE ge SPECIFIED VALUE FOR Tg MAX Zo T Bye f ZE toh { = ae? Hy $a. TEPHTHBRS gs 4} g Y & Se eR , a8 Ep 5 a Th - Ht Ht = L iii NTI) is OS 180 B00 CASE TEMPERATURE {Te] =! 9205-2085681 Fig, 2Derating curve for all types.ve G E SOLID STATE ou ve sazsoan oozes o ff ; 3875081 GE SOLID STATE o1E 17275. 0 1 3327 : Darlington Power Transistors j f BD643, BD645, BD647, BD649 ELECTRICAL CHARACTERISTICS, At Case Temperature (To) = 25C Unless Otherwise Specified TEST CONDITIONS LIMITS . CUR: CHARACTERISTIC VOLTAGE RENT 8D647 Boe49 UNITS Vide Ade Vos | Voce | Veel 'c | Min. | Max.| Min. | Max. | 40 - 0.5 - ~ CEO 50 _ _ _ 5 80 - jo2; - IcBo 400 ~ |||}o2] : FET: = To = 100C 100 ~ |_| |e leEBO 5} 0/j]2] / 2 ViBRYCEO 0.14 so} 100); ViBR)CEO 0.005] so| | 100] v ViBR)EBO _ _ Ig = 2mA 5 5 3 0.58|1500b | -- | 15000] -- NEE 3 34] 750 | ~ | 750} 3 6a| 750b | | 7500 VBE 3 gaf |25 | | 25 Voetsat) _ _ Vv tg = 12mA a 2 2 fy f=1 MHz ; st abl | al | Mee Rac ~ |2]) ]2 | eow Pulsed; pulse duration = 200 us, duty factor = 1%. Typicas value, 277 9817 B-14ane G E SOLID STATE OL ved 3875081 OOL727b 1 fT 3875081 GE SOLID STATE Darlington Power Transistors OE tra76 pT BB29 BD643, BD645, BD647, BD649 CASE TEMPERATURE(T)* 25C . (CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE) 5 ert Hic (MAX.) PULSE Te (MAX JCONTINUG OR SINGLE N REPETITIVE UL COLLECTOR CURRENT (I)A o Vceo MaX* 60 V (80647) focettiterttie COLLECTOR~ TO-EMITTER VOLTAGE (Vog} 92CN- 32698 Fig. 3Maximum operating area for ail types, 278 0818 - C-01