MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2 1 of 7
www.diodes.com August 2012
© Diodes Incorporated
MMBT2222ALP4
40V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
• Low Collector-Emitter Saturation Voltage, VCE(sat)
• Ultra-Small Leadless Surface Mount Package
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X2-DFN1006-3
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.0009 grams (Approximate)
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
MMBT2222ALP4-7B 2S 7 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes In corpor ated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Top View
Device Schematic
C
E
B
Device Symbol
C
E
B
Bottom View
X2-DFN1006-3
2S = Product Type Marking Code
Bar Denotes Base and Emitter Side
Top View
e4
2S
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2 2 of 7
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© Diodes Incorporated
MMBT2222ALP4
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 75 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current - Continuous IC 600 mA
Peak Collector Current ICM 800 mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 460 mW
Power Dissipation (Note 6) PD 1 W
Thermal Resistance, Junction to Ambient (Note 5) R
θ
JA 272 °C/W
Thermal Resistance, Junction to Ambient (Note 6) R
θ
JA 120 °C/W
Thermal Resistance, Junction to Lead (Note 7) R
θ
JL 110 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
ESD Ratings (Note 8)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 5. For a device surface mounted on minimum recommended pad layout FR-4 PCB with single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as note 5, except device is surface mounted on 25mm X 25mm collector pad heatsink with 1oz copper.
7. Thermal resistance from junctio n to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2 3 of 7
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© Diodes Incorporated
MMBT2222ALP4
Thermal Characteristics
0.000001 0.0001 0.01 1 100 10,000
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
t1, PULSE DURAT ION TIME (sec)
Fig ur e 1 Tran sien t Thermal Resis t ance
R (t) = r(t) * R
R = 272°C/W
Duty Cycle, D = t1/ t2
θθ
θ
JA JA
JA
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
1,000
1E-06 0.0001 0.01 1 100 10,000
100
10
1
0.1
t1, PULSE DURATION TIME (sec)
Figure 2 Single Pulse Maximum Power Dissipation
P
,
P
EAK
T
R
ANSIEN
T
P
O
IWE
R
(W)
(PK)
Single Pulse
R = 272C/W
R = r * R
T - T = P * R
θ
θθ
θ
JA
JA(t) (t) JA
JA JA(t)
°
0 50 100 150 200
0
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(W)
D
0.1
0.2
0.3
0.4
0.5
T , AMBIENT TEMPERA TURE (°C)
Fig ur e 3 Po w er D issipat io n vs. Ambient Temperature
A
R = 272 C/W
θ
JA
°
MMBT2222ALP4
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© Diodes Incorporated
MMBT2222ALP4
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO 75 ⎯ ⎯ V IC = 100μA, IE = 0
Collector-Emitter Breakdown Voltage (Note 6) BVCEO 40 ⎯ ⎯ V IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO 6 ⎯ ⎯ V IE = 100μA, IC = 0
Collector Cutoff Current ICEX ⎯ 10 nA
VCE = 60V, VEB
(
off
)
= 3V
Collector Cutoff Current ICBO ⎯ ⎯ 10 nA
VCB = 60V, IE = 0
⎯ ⎯ 10 μA VCB = 60V, IE = 0, TA = +125°C
Emitter Cutoff Current IEBO ⎯ ⎯ 10 nA
VEB = 5V, IC = 0
Base Cutoff Current IBL ⎯ ⎯ 20 nA
VCE = 60V, VEB
(
off
)
= 3V
ON CHARACTERISTICS (Note 6)
DC Current Gain hFE
35 ⎯ ⎯ ⎯ V
CE = 10V, IC = 0.1mA
50 ⎯ ⎯ ⎯ VCE = 10V, IC = 1mA
75 ⎯ ⎯ ⎯ VCE = 10V, IC = 10mA
35 ⎯ ⎯ ⎯ VCE = 10V, IC = 10mA, TA = -55°C
100 ⎯ 300 ⎯ VCE = 10V, IC = 150mA
50 ⎯ ⎯ ⎯ VCE = 1V, IC = 150mA
40 ⎯ ⎯ ⎯ VCE = 10V, IC = 500mA
Collector-Emitter Saturation Voltage VCE(sat) ⎯
⎯ ⎯
⎯
0.3
1.0 V IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage VBE(sat) 0.6 ⎯ 1.2 V IC = 150mA, IB = 15mA
⎯ ⎯ 2.0 IC = 500mA, IB = 50mA
SMALL SIGNAL CHARACTERISTICS (Note 6)
Output Capacitance Cobo ⎯ ⎯ 8 pF
VCB = 10V, f = 1.0MHz, IE = 0
Input Capacitance Cibo
25 pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Current Gain-Bandwidth Product fT 300 ⎯ ⎯ MHz VCE = 20V, IC = 20mA, f = 100MHz
Noise Figure NF ⎯ ⎯ 4.0 dB
VCE = 10V, IC = 100µA, RS = 1.0kΩ,
f = 1.0kHz
Input Impedance hie 0.25 ⎯1.25 kΩ
IC = 10mA, VCE = 10V, f = 1.0kHz
Voltage Feedback Ratio hre ⎯ ⎯4.0 X 10−4
Small-Signal Current Gain hfe 75 ⎯375 ⎯
Output Admittance hoe 25 ⎯200 µS
SWICHING CHARACTERISTICS (Note 6)
Delay Time td ⎯ ⎯ 10
nS
VCC = 30V, VBE(off) = -0.5V,
IC = 150mA, IB1 = 15mA Rise Time t
r
⎯ ⎯ 25
Storage Time ts ⎯ ⎯ 225 VCC = 30V, IC = 150mA,
IB1 = IB2=15mA Fall Time tf⎯ ⎯ 60
Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤2%.
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2 5 of 7
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© Diodes Incorporated
MMBT2222ALP4
1
10
1,000
100
0.1 110 1,000
100
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
I , COLLECTOR CURRENT (mA)
Figure 4 T ypical DC Current Gain vs.
Collector Current
C
T = -25°C
A
T = +25°C
A
T = 125°C
A
V = 1.0V
CE
110 100 1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Figure 5 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
C
T = 25°C
A
T = -50°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
I
I
C
B
= 10
10.1 10 100
V , BASE - EMI
T
T
E
R
T
U
R
N-
O
N V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Figure 6 Typical Base-Emitter T urn-On Voltage
vs. C ollec tor Cu r r ent
C
0.2
0.3
0.4
0.6
0.5
0.8
0.7
1.0
0.9
V = 5V
CE
T = 25°C
A
T = -50°C
A
T = 150°C
A
CAPACITANCE (pF)
V , REVERSE VOLTAGE (V)
Fi gur e 7 Ty p i c al
R
Ca paci t a nce C ha r act er ist ics
Cibo
Cobo
f = 1MHz
1
10
100
1,000
110100
I , COLLECTOR CURRENT (mA)
Figure 8 Typical Gain-Bandwidth Product vs. Collector Current
C
f,
G
AI
N
-BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V = 5V
CE
0.001 0.01 1 10
0.1 100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
I , BASE CURRENT (mA)
Figure 9 T ypical Collector Saturation Region
B
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
V
O
L
T
A
G
E (V)
CE
I = 1mA
C
I = 10mA
C
I = 30mA
C
I = 100mA
C
I = 300mA
C
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2 6 of 7
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© Diodes Incorporated
MMBT2222ALP4
Package Outline Dimensions
Suggested Pad Layout
X2-DFN1006-3
Dim Min Max Typ
A ⎯0.40 ⎯
A1 0 0.05 0.03
b1 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.05 1.00
E 0.55 0.65 0.60
e ⎯ ⎯ 0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3 ⎯ ⎯ 0.40
All Dimensions in mm
Dimensions Value (in mm)
Z 1.1
G1 0.3
G2 0.2
X 0.7
X1 0.25
Y 0.4
C 0.7
Y
C
G1
G2
X
X
1
Z
L2
A1
Eb2
L1L3
D
e
b1
A
MMBT2222ALP4
Document number: DS35506 Rev. 3 - 2 7 of 7
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© Diodes Incorporated
MMBT2222ALP4
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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