Package Thermal Characterization
Introduction
Effective heat removal from the IC chip, through the pack-
age, to the adjacent environment is crucial to maintain an al-
lowable device junction temperature. The latter directly af-
fects the electrical circuit performance both at the
component and system levels. Aside from thermal enhance-
ment of individual packages by the IC manufacturers, proper
printed circuit board (PCB) layout and cabinet design by the
end users can also substantially reduce the overall package
thermal resistance.
The fundamentals of various heat transfer modes can be
found in any classic heat transfer textbook, and recent ad-
vances in heat transfer and fluid flow development can be re-
ferred from published technical papers. Thus, the intent of
this application note is threefold:
1. provide practical aspects of package thermal resistance
definition;
2. show how the data are generated; and,
3. discuss package mounting, board effect, and system ef-
fect on heat transfer.
This application note first covers the basics of package ther-
mal characterization to help the end user in interpreting the
package thermal data. Subsequently, the package mounting
effects, board effects, and system effects on package heat
transfer are outlined, along with some critical dimensions.
The last section is a summary of major guidelines for the end
user to obtain a better thermal design at the board and sys-
tem levels.
Package Thermal Characterization
Thermal properties of electronic packages are characterized
by θ
JA
and θ
JC
, which are widely used in the electronic in-
dustry. θ
JA
can be defined as an overall package thermal re-
sistance, which is the sum of package internal and external
thermal resistance. It can be expressed as:
θ
JA
=θ
JC
+θ
CA
=(T
J
−T
A
)/P
where
θ
JC
:(T
J
−T
C
)/P, junction-to-case conductive thermal resis-
tance (˚C/W)
θ
CA
:(T
C
−T
A
)/P, case-to-ambient convective thermal re-
sistance (˚C/W)
P: I (Current) x V (voltage), Device heat dissipation (W)
T
J
: Average device junction temperature (˚C)
T
A
: Average ambient temperature (˚C)
T
C
: Case temperature at a prescribed package surface
(˚C).
θ
JC
is dominated by the conductive thermal resistance within
layers of packaging materials, and is highly dependent on
the package configuration. If the heat flow is assumed to be
perpendicular to each layer of the packaging material, θ
JC
may be expressed as ∑t
i
/(k
i
A
i
)
where t, k, andAare the thickness, thermal conductivity, and
heat transfer surface area of each packaging material layer,
e.g., die attach material, lead frame, die coating, and encap-
sulant.
θ
CA
is the external convective thermal resistance. It is greatly
affected by adjacent ambient conditions, package boundary
conditions, and conjugate heat transfer.
Figures 1, 2, 3
and
Figure 4
describe the package thermal
experiments, TSP (Temperature Sensitive Parameter) diode
calibration procedure, θ
JC
and θ
JA
deriving methods, as
summarized by (1). Typically, T
A
and T
C
are physically mea-
sured by high precision thermocouple wires. T
J
is an indirect
measurement extracted from the TSP diode calibration
curve. The average device power is calculated by the prod-
uct of measured current flow and voltage across the power
and ground pins of a given package. All measured values
are recorded at the thermal equilibrium state of room tem-
perature and 1 atm. conditions. Details on the measure-
ments procedures can be found elsewhere (2), together with
data generated with a thermal test chip (3).
August 1999
Package Thermal Characterization
© 2000 National Semiconductor Corporation MS011816 www.national.com