IPL60R299CP MOSFET 600VCoolMOSCPPowerTransistor ThinPAK8x8 TheCoolMOSTMCPseriesoffersdeviceswhichprovideallbenefitsofa fastswitchingSJMOSFETwhilenotsacrificingeaseofuse.Extremelylow switchingandconductionlossesmakeswitchingapplicationsevenmore efficient,morecompact,lighter,andcooler.. ThinPAK ThinPAKisaanewleadlessSMDpackageforHVMOSFETs.Thenew packagehasaverysmallfootprintofonly64mm(vs.150mmforthe DPAK)andaverylowprofilewithonly1mmheight(vs.4.4mmforthe DPAK).Thesignificantlysmallerpackagesize,combinedwithbenchmark lowparasiticinductances,providesdesignerswithanewandeffectiveway todecreasesystemsolutionsizeinpower-densitydrivendesigns. Drain Pin 5 Features *Reducedboardspaceconsumption *Increasedpowerdensity *Shortcommutationloop *Smoothswitchingwaveform *easytouseproducts *ExtremelylowlossesduetoverylowFOMRdson*QgandEoss *QuallfiedaccordingtoJEDEC(J-STD20andJESD22)fortarget applications(Server,Adapter) *Pb-freeplating,Halogenfree Gate Pin 1 Driver Source Pin 2 Power Source Pin 3,4 Potentialapplications Server,Adapter Table1KeyPerformanceParameters Parameter Value Unit Vds @ Tjmax 650 V RDS(on),max 0.299 Qg,typ 22 nC ID,pulse 34 A Eoss @ 400V 4.2 J Body diode diF/dt 200 A/s Type/OrderingCode Package Marking IPL60R299CP PG-VSON-4 6R299P Final Data Sheet 1 RelatedLinks see Appendix A Rev.2.2,2017-09-06 600VCoolMOSCPPowerTransistor IPL60R299CP TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.2,2017-09-06 600VCoolMOSCPPowerTransistor IPL60R299CP 1Maximumratings atTj=25C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Pulsed drain current2) Values Unit Note/TestCondition 11.1 7.0 A TC = 25C TC = 100C - 34 A TC=25 C Min. Typ. Max. ID - - ID,pulse - EAS - - 290 mJ ID =4.4 A; VDD = 50 V 3) EAR - - 0.44 mJ ID =4.4 A; VDD = 50 V 3) Avalanche current, repetitive IAR - - 4.4 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V Gate source voltage VGS -20 -30 - 20 30 V static; AC (f>1 Hz) Power dissipation Ptot - - 96 W TC=25C Operating Temperature Tj -40 - 150 C - Storage Temperature Tstg -40 - 125 C - Continuous diode forward current IS - - 11.1 A TC=25C Diode pulse current IS,pulse - - 34 A TC = 25C Reverse diode dv/dt4) dv/dt - - 15 V/ns VDS=0...400V,ISD<=ID,Tj=25C see table 8 Maximum diode commutation speed diF/dt - - 200 A/s VDS=0...400V,ISD<=ID,Tj=25C see table 8 Unit Note/TestCondition Avalanche energy, single pulse Avalanche energy, repetitive 2) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 1.3 C/W - Thermal resistance, junction - ambient5) RthJA - - 45 C/W SMD version, device on PCB, 6cm cooling area Soldering temperature, wavesoldering only allowed at leads - - 260 C reflow MSL2a Tsold 1) Limited by Tj max. Maximum duty cycle Pulse width tp limited by Tj,max 3) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f; Pulse width tp limited by Tj,max 4) IdenticallowsideandhighsideswitchwithidenticalRG 5) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70?m) for drain connection. PCB is vertical without air stream cooling. 2) Final Data Sheet 3 Rev.2.2,2017-09-06 600VCoolMOSCPPowerTransistor IPL60R299CP 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=0.25mA 3 3.5 V VDS=VGS,ID=0.44mA - 10 1 - A VDS=600V,VGS=0V,Tj=25C VDS=600V,VGS=0V,Tj=150C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.27 0.70 0.299 - VGS=10V,ID=6.6A,Tj=25C VGS=10V,ID=6.6A,Tj=150C Gate resistance RG - 1.9 - f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 600 - Gate threshold voltage V(GS)th 2.5 Zero gate voltage drain current IDSS Gate-source leakage curent Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1100 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 60 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 46 - pF VGS=0V,VDS=0...480V Effective output capacitance, time related2) Co(tr) - 120 - pF ID=constant,VGS=0V,VDS=0...480V Turn-on delay time td(on) - 10 - ns VDD=400V,VGS=13V,ID=6.6A, RG=4.3;seetable9 Rise time tr - 5 - ns VDD=400V,VGS=13V,ID=6.6A, RG=4.3;seetable9 Turn-off delay time td(off) - 40 - ns VDD=400V,VGS=13V,ID=6.6A, RG=4.3;seetable9 Fall time tf - 5 - ns VDD=400V,VGS=13V,ID=6.6A, RG=4.3;seetable9 Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 5 - nC VDD=480V,ID=6.6A,VGS=0to10V Gate to drain charge Qgd - 8 - nC VDD=480V,ID=6.6A,VGS=0to10V Gate charge total Qg - 22 - nC VDD=480V,ID=6.6A,VGS=0to10V Gate plateau voltage Vplateau - 5.0 - V VDD=480V,ID=6.6A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS 2) Final Data Sheet 4 Rev.2.2,2017-09-06 600VCoolMOSCPPowerTransistor IPL60R299CP Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=6.6A,Tj=25C 300 - ns VR=400V,IF=6.6diF/dt=100A/s see table 8 - 3.9 - C VR=400V,IF=6.6diF/dt=100A/s see table 8 - 26 - A VR=400V,IF=6.6diF/dt=100A/s see table 8 Min. Typ. Max. VSD - 0.9 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 5 Rev.2.2,2017-09-06 600VCoolMOSCPPowerTransistor IPL60R299CP 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 120 1 s 100 10 s 10 1 10 0 100 s 1 ms ID[A] Ptot[W] 80 60 10 ms DC 40 10-1 20 0 0 25 50 75 100 125 10-2 150 100 101 TC[C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 1 s 10 s 101 100 ZthJC[K/W] ID[A] 100 s 1 ms 100 10 ms 0.5 0.2 0.1 10-1 DC 0.05 0.02 0.01 10-1 single pulse 10-2 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.2,2017-09-06 600VCoolMOSCPPowerTransistor IPL60R299CP Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 50 25 20 V 45 10 V 8V 7V 20 V 40 20 10 V 8V 35 6V 7V 15 5.5 V ID[A] ID[A] 30 25 6V 20 10 5V 15 5.5 V 10 4.5 V 5 5V 5 0 4.5 V 0 5 10 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25C;parameter:VGS ID=f(VDS);Tj=125C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 0.80 5V 1.90 5.5 V 6V 6.5 V 7V 0.70 1.70 0.60 RDS(on)[] RDS(on)[] 1.50 1.30 1.10 10 V typ 0.40 0.30 0.90 0.20 0.70 0.50 98% 0.50 0 5 10 15 20 25 30 0.10 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[C] RDS(on)=f(Tj);ID=6.6A;VGS=10V 7 Rev.2.2,2017-09-06 600VCoolMOSCPPowerTransistor IPL60R299CP Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 50 10 9 25 C 40 8 35 7 30 6 VGS[V] ID[A] 45 25 20 120 V 480 V 5 4 150 C 15 3 10 2 5 1 0 0 2 4 6 8 0 10 0 5 VGS[V] 10 15 20 25 125 150 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=6.6Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 300 250 101 IF[A] 125 C EAS[mJ] 200 25 C 100 150 100 50 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 Tj[C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=4.4A;VDD=50V 8 Rev.2.2,2017-09-06 600VCoolMOSCPPowerTransistor IPL60R299CP Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 105 680 660 104 640 Ciss 620 C[pF] VBR(DSS)[V] 103 Coss 102 600 101 580 Crss 100 560 540 -60 -20 20 60 100 140 180 10-1 0 100 200 Tj[C] 300 400 500 600 VDS[V] VBR(DSS)=f(Tj);ID=0.25mA C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 8 7 6 Eoss[J] 5 4 3 2 1 0 0 100 200 300 400 500 600 VDS[V] Eoss=f(VDS) Final Data Sheet 9 Rev.2.2,2017-09-06 600VCoolMOSCPPowerTransistor IPL60R299CP 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform Rg1 VDS Rg 2 IF Rg1 = Rg 2 Table9switchingtimes(ss) Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload(ss) Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 10 ID VDS Rev.2.2,2017-09-06 600VCoolMOSCPPowerTransistor IPL60R299CP 6PackageOutlines Figure1OutlinePG-VSON-4,dimensionsinmm/inches Final Data Sheet 11 Rev.2.2,2017-09-06 600VCoolMOSCPPowerTransistor IPL60R299CP 7AppendixA Table11RelatedLinks * IFXCoolMOSWebpage:www.infineon.com * IFXDesigntools:www.infineon.com Final Data Sheet 12 Rev.2.2,2017-09-06 600VCoolMOSCPPowerTransistor IPL60R299CP RevisionHistory IPL60R299CP Revision:2017-09-06,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.2 2017-09-06 Updated MSL; style updated TrademarksofInfineonTechnologiesAG AURIXTM,C166TM,CanPAKTM,CIPOSTM,CoolGaNTM,CoolMOSTM,CoolSETTM,CoolSiCTM,CORECONTROLTM,CROSSAVETM,DAVETM,DI-POLTM,DrBladeTM, EasyPIMTM,EconoBRIDGETM,EconoDUALTM,EconoPACKTM,EconoPIMTM,EiceDRIVERTM,eupecTM,FCOSTM,HITFETTM,HybridPACKTM,InfineonTM, ISOFACETM,IsoPACKTM,i-WaferTM,MIPAQTM,ModSTACKTM,my-dTM,NovalithICTM,OmniTuneTM,OPTIGATM,OptiMOSTM,ORIGATM,POWERCODETM, PRIMARIONTM,PrimePACKTM,PrimeSTACKTM,PROFETTM,PRO-SILTM,RASICTM,REAL3TM,ReverSaveTM,SatRICTM,SIEGETTM,SIPMOSTM,SmartLEWISTM, SOLIDFLASHTM,SPOCTM,TEMPFETTM,thinQTM,TRENCHSTOPTM,TriCoreTM. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.2,2017-09-06