1
IPL60R299CP
Rev.2.2,2017-09-06Final Data Sheet
ThinPAK8x8
Drain
Pin 5
Gate
Pin 1
Power
Source
Pin 3,4
Driver
Source
Pin 2
MOSFET
600VCoolMOSªCPPowerTransistor
TheCoolMOS™CPseriesoffersdeviceswhichprovideallbenefitsofa
fastswitchingSJMOSFETwhilenotsacrificingeaseofuse.Extremelylow
switchingandconductionlossesmakeswitchingapplicationsevenmore
efficient,morecompact,lighter,andcooler..
ThinPAK
ThinPAKisaanewleadlessSMDpackageforHVMOSFETs.Thenew
packagehasaverysmallfootprintofonly64mm²(vs.150mm²forthe
D²PAK)andaverylowprofilewithonly1mmheight(vs.4.4mmforthe
D²PAK).Thesignificantlysmallerpackagesize,combinedwithbenchmark
lowparasiticinductances,providesdesignerswithanewandeffectiveway
todecreasesystemsolutionsizeinpower-densitydrivendesigns.
Features
•Reducedboardspaceconsumption
•Increasedpowerdensity
•Shortcommutationloop
•Smoothswitchingwaveform
•easytouseproducts
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•QuallfiedaccordingtoJEDEC(J-STD20andJESD22)fortarget
applications(Server,Adapter)
•Pb-freeplating,Halogenfree
Potentialapplications
Server,Adapter
Table1KeyPerformanceParameters
Parameter Value Unit
Vds @ Tjmax 650 V
RDS(on),max 0.299 Ω
Qg,typ 22 nC
ID,pulse 34 A
Eoss @ 400V 4.2 µJ
Body diode diF/dt 200 A/µs
Type/OrderingCode Package Marking RelatedLinks
IPL60R299CP PG-VSON-4 6R299P see Appendix A
2
600VCoolMOSªCPPowerTransistor
IPL60R299CP
Rev.2.2,2017-09-06Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3
600VCoolMOSªCPPowerTransistor
IPL60R299CP
Rev.2.2,2017-09-06Final Data Sheet
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current1) ID-
-
-
-
11.1
7.0 ATC = 25°C
TC = 100°C
Pulsed drain current2) ID,pulse - - 34 A TC=25 °C
Avalanche energy, single pulse EAS - - 290 mJ ID =4.4 A; VDD = 50 V
Avalanche energy, repetitive3) EAR - - 0.44 mJ ID =4.4 A; VDD = 50 V
Avalanche current, repetitive3) IAR - - 4.4 A -
MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480V
Gate source voltage VGS -20
-30
-
-
20
30 Vstatic;
AC (f>1 Hz)
Power dissipation Ptot - - 96 W TC=25°C
Operating Temperature Tj-40 - 150 °C -
Storage Temperature Tstg -40 - 125 °C -
Continuous diode forward current IS- - 11.1 A TC=25°C
Diode pulse current2) IS,pulse - - 34 A TC = 25°C
Reverse diode dv/dt4) dv/dt - - 15 V/ns VDS=0...400V,ISD<=ID,Tj=25°C
see table 8
Maximum diode commutation speed diF/dt - - 200 A/µsVDS=0...400V,ISD<=ID,Tj=25°C
see table 8
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - case RthJC - - 1.3 °C/W -
Thermal resistance, junction - ambient5) RthJA - - 45 °C/W SMD version, device on PCB, 6cm²
cooling area
Soldering temperature, wavesoldering
only allowed at leads Tsold - - 260 °C reflow MSL2a
1) Limited by Tj max. Maximum duty cycle
2) Pulse width tp limited by Tj,max
3) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f; Pulse width tp limited by Tj,max
4)IdenticallowsideandhighsideswitchwithidenticalRG
5) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70?m) for drain connection. PCB
is vertical without air stream cooling.
4
600VCoolMOSªCPPowerTransistor
IPL60R299CP
Rev.2.2,2017-09-06Final Data Sheet
3Electricalcharacteristics
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=0.25mA
Gate threshold voltage V(GS)th 2.5 3 3.5 V VDS=VGS,ID=0.44mA
Zero gate voltage drain current IDSS -
-
-
10
1
-µAVDS=600V,VGS=0V,Tj=25°C
VDS=600V,VGS=0V,Tj=150°C
Gate-source leakage curent IGSS - - 100 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
0.27
0.70
0.299
-ΩVGS=10V,ID=6.6A,Tj=25°C
VGS=10V,ID=6.6A,Tj=150°C
Gate resistance RG- 1.9 - Ωf=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 1100 - pF VGS=0V,VDS=100V,f=1MHz
Output capacitance Coss - 60 - pF VGS=0V,VDS=100V,f=1MHz
Effective output capacitance, energy
related1) Co(er) - 46 - pF VGS=0V,VDS=0...480V
Effective output capacitance, time
related2) Co(tr) - 120 - pF ID=constant,VGS=0V,VDS=0...480V
Turn-on delay time td(on) - 10 - ns VDD=400V,VGS=13V,ID=6.6A,
RG=4.3Ω;seetable9
Rise time tr- 5 - ns VDD=400V,VGS=13V,ID=6.6A,
RG=4.3Ω;seetable9
Turn-off delay time td(off) - 40 - ns VDD=400V,VGS=13V,ID=6.6A,
RG=4.3Ω;seetable9
Fall time tf- 5 - ns VDD=400V,VGS=13V,ID=6.6A,
RG=4.3Ω;seetable9
Table6Gatechargecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 5 - nC VDD=480V,ID=6.6A,VGS=0to10V
Gate to drain charge Qgd - 8 - nC VDD=480V,ID=6.6A,VGS=0to10V
Gate charge total Qg- 22 - nC VDD=480V,ID=6.6A,VGS=0to10V
Gate plateau voltage Vplateau - 5.0 - V VDD=480V,ID=6.6A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS
5
600VCoolMOSªCPPowerTransistor
IPL60R299CP
Rev.2.2,2017-09-06Final Data Sheet
Table7Reversediodecharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=6.6A,Tj=25°C
Reverse recovery time trr - 300 - ns VR=400V,IF=6.6diF/dt=100A/µs
see table 8
Reverse recovery charge Qrr - 3.9 - µC VR=400V,IF=6.6diF/dt=100A/µs
see table 8
Peak reverse recovery current Irrm - 26 - A VR=400V,IF=6.6diF/dt=100A/µs
see table 8
6
600VCoolMOSªCPPowerTransistor
IPL60R299CP
Rev.2.2,2017-09-06Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W]
0 25 50 75 100 125 150
0
20
40
60
80
100
120
Ptot=f(TC)
Diagram2:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
100101102103
10-2
10-1
100
101
102
1 µs
10 µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=80°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K/W]
10-5 10-4 10-3 10-2 10-1
10-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tP);parameter:D=tp/T
7
600VCoolMOSªCPPowerTransistor
IPL60R299CP
Rev.2.2,2017-09-06Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
5
10
15
20
25
30
35
40
45
50
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.outputcharacteristics
VDS[V]
ID[A]
0 5 10 15 20
0
5
10
15
20
25
20 V
10 V
8 V
7 V
6 V
5.5 V
5 V
4.5 V
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
ID[A]
RDS(on)[Ω]
0 5 10 15 20 25 30
0.50
0.70
0.90
1.10
1.30
1.50
1.70
1.90 5 V 5.5 V 6 V 6.5 V 7 V
10 V
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Diagram8:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[Ω]
-50 -25 0 25 50 75 100 125 150
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
98%
typ
RDS(on)=f(Tj);ID=6.6A;VGS=10V
8
600VCoolMOSªCPPowerTransistor
IPL60R299CP
Rev.2.2,2017-09-06Final Data Sheet
Diagram9:Typ.transfercharacteristics
VGS[V]
ID[A]
0246810
0
5
10
15
20
25
30
35
40
45
50
150 °C
25 °C
ID=f(VGS);VDS=20V;parameter:Tj
Diagram10:Typ.gatecharge
Qgate[nC]
VGS[V]
0 5 10 15 20 25
0
1
2
3
4
5
6
7
8
9
10
120 V 480 V
VGS=f(Qgate);ID=6.6Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.5 1.0 1.5 2.0
10-1
100
101
102
125 °C 25 °C
IF=f(VSD);parameter:Tj
Diagram12:Avalancheenergy
Tj[°C]
EAS[mJ]
25 50 75 100 125 150
0
50
100
150
200
250
300
EAS=f(Tj);ID=4.4A;VDD=50V
9
600VCoolMOSªCPPowerTransistor
IPL60R299CP
Rev.2.2,2017-09-06Final Data Sheet
Diagram13:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-60 -20 20 60 100 140 180
540
560
580
600
620
640
660
680
VBR(DSS)=f(Tj);ID=0.25mA
Diagram14:Typ.capacitances
VDS[V]
C[pF]
0 100 200 300 400 500 600
10-1
100
101
102
103
104
105
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram15:Typ.Cossstoredenergy
VDS[V]
Eoss[µJ]
0 100 200 300 400 500 600
0
1
2
3
4
5
6
7
8
Eoss=f(VDS)
10
600VCoolMOSªCPPowerTransistor
IPL60R299CP
Rev.2.2,2017-09-06Final Data Sheet
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform
VDS
IF
Rg1
Rg 2
Rg1 = Rg 2
Table9switchingtimes(ss)
Switching times test circuit for inductive load Switching times waveform
VDS
VGS
td(on) td(off)
tr
ton
tf
toff
10%
90%
VDS
VGS
Table10Unclampedinductiveload(ss)
Unclamped inductive load test circuit Unclamped inductive waveform
VDS
V(BR)DS
ID
VDS
VDS
ID
11
600VCoolMOSªCPPowerTransistor
IPL60R299CP
Rev.2.2,2017-09-06Final Data Sheet
6PackageOutlines
Figure1OutlinePG-VSON-4,dimensionsinmm/inches
12
600VCoolMOSªCPPowerTransistor
IPL60R299CP
Rev.2.2,2017-09-06Final Data Sheet
7AppendixA
Table11RelatedLinks
•IFXCoolMOSWebpage:www.infineon.com
•IFXDesigntools:www.infineon.com
13
600VCoolMOSªCPPowerTransistor
IPL60R299CP
Rev.2.2,2017-09-06Final Data Sheet
RevisionHistory
IPL60R299CP
Revision:2017-09-06,Rev.2.2
Previous Revision
Revision Date Subjects (major changes since last revision)
2.2 2017-09-06 Updated MSL; style updated
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(“Beschaffenheitsgarantie”).
Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe
product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation
warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
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productofInfineonTechnologiesincustomer’sapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s
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informationgiveninthisdocumentwithrespecttosuchapplication.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
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Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.