2N3798 2N3798A
2N3799 2N3799A
SILICON
PNP TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3798, 2N3799
series devices are silicon PNP epitaxial planar transistors
designed for low noise amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) 2N3798 2N3798A
SYMBOL 2N3799 2N3799A UNITS
Collector-Base Voltage VCBO 60 90 V
Collector-Emitter Voltage VCEO 60 90 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 50 mA
Power Dissipation PD 360 mW
Power Dissipation (TC=25°C) PD 1.2 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance JA 0.49 °C/mW
Thermal Resistance JC 150 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=50V 10 nA
ICBO V
CB=50V, TA=150°C 10 A
IEBO V
EB=4.0V 20 nA
BVCBO I
C=10µA (2N3798, 2N3799) 60 V
BVCBO I
C=10µA (2N3798A, 2N3799A) 90 V
BVCEO I
C=10mA (2N3798, 2N3799) 60 V
BVCEO I
C=10mA (2N3798A, 2N3799A) 90 V
BVEBO I
E=10µA 5.0 V
VCE(SAT) I
C=100µA, IB=10µA 0.20 V
VCE(SAT) I
C=1.0mA, IB=100µA 0.25 V
VBE(SAT) I
C=100µA, IB=10µA 0.70 V
VBE(SAT) I
C=1.0mA, IB=100µA 0.80 V
VBE(ON) V
CE=5.0V, IC=100A 0.70 V
2N3798 2N3799
2N3798A 2N3799A
MIN MAX MIN MAX
hFE V
CE=5.0V, IC=1.0A - - 75 -
hFE V
CE=5.0V, IC=10A 100 - 225 -
hFE V
CE=5.0V, IC=100A 150 - 300 -
hFE V
CE=5.0V, IC=100A, TA=-55°C 75 - 150 -
hFE V
CE=5.0V, IC=500A 150 450 300 900
hFE V
CE=5.0V, IC=1.0mA 150 - 300 -
hFE V
CE=5.0V, IC=10mA 125 - 250 -
TO-18 CASE
R1 (22-September 2014)
www.centralsemi.com
2N3798 2N3798A
2N3799 2N3799A
SILICON
PNP TRANSISTORS
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
TO-18 CASE - MECHANICAL OUTLINE
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
2N3798 2N3799
2N3798A 2N3799A
SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
fT V
CE=5.0V, IC=500A, f=30MHz 30 - - 30 - - MHz
fT* VCE=5.0V, IC=1.0mA, f=100MHz - 80 - - 80 - MHz
Cob* VCB=5.0V, IE=0, f=100kHz - - 5.0 - - 5.0 pF
Cib* VEB=0.5V, IC=0, f=100kHz - - 15 - - 15 pF
hie V
CE=10V, IC=1.0mA, f=1.0kHz 3.0 - 15 10 - 40 k
hre V
CE=10V, IC=1.0mA, f=1.0kHz - - 25 - - 25 x10-4
hfe V
CE=10V, IC=1.0mA, f=1.0kHz 150 - 600 300 - 900
hoe V
CE=10V, IC=1.0mA, f=1.0kHz 5.0 - 60 5.0 - 60 S
NF VCE=10V, IC=100A, RG=3.0k,
f=100Hz, BW=20Hz - 4.0 7.0 - 2.5 4.0 dB
NF VCE=10V, IC=100A, RG=3.0k,
f=1.0kHz, BW=200Hz - 1.5 3.0 - 0.8 1.5 dB
NF VCE=10V, IC=100A, RG=3.0k,
f=10kHz, BW=2.0kHz - 1.0 2.5 - 0.8 1.5 dB
NF VCE=10V, IC=100A, RG=3.0k,
Broadband BW=10Hz to 15.7kHz - 2.5 3.5 - 1.5 2.5 dB
* Limits not in accordance with JEDEC registered values.
www.centralsemi.com
R1 (22-September 2014)
For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER,
which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
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(001)
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2N3799