MJD45H11G - ON Semiconductor

August, 2012 − Rev. 14

1Publication Order Number:

MJD44H11/D

MJD44H11,

NJVMJD44H11 (NPN),

MJD45H11,

NJVMJD45H11 (PNP)

Complementary Power

Transistors

DPAK For Surface Mount Applications

Designed for general purpose power and switching such as output or

driver stages in applications such as switching regulators, converters,

and power amplifiers.

Features

•Lead Formed for Surface Mount Application in Plastic Sleeves

(No Suffix)

•Straight Lead Version in Plastic Sleeves (“−1” Suffix)

•Electrically Similar to Popular D44H/D45H Series

•Low Collector Emitter Saturation Voltage −

VCE(sat) = 1.0 Volt Max @ 8.0 A

•Fast Switching Speeds

•Complementary Pairs Simplifies Designs

•Epoxy Meets UL 94 V−0 @ 0.125 in

•ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

•NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These are Pb−Free Packages*

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

SILICON

POWER TRANSISTORS

8 AMPERES

80 VOLTS, 20 WATTS

IPAK

CASE 369D

STYLE 1

DPAK

CASE 369C

STYLE 1

MARKING

DIAGRAMS

A = Assembly Location

Y = Year

WW = Work Week

J4xH11 = Device Code

x = 4 or 5

G=Pb−Free Package

4AYWW

xH11G

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

ORDERING INFORMATION

AYWW

xH11G

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MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)

http://onsemi.com

MAXIMUM RATINGS (TA = 25_C, common for NPN and PNP, minus sign, “−”, for PNP omitted, unless otherwise noted)

Rating Symbol Max Unit

Collector−Emitter Voltage VCEO 80 Vdc

Emitter−Base Voltage VEB 5 Vdc

Collector Current − Continuous

− Peak

IC8

Adc

Total Power Dissipation

@ TC = 25°C

Derate above 25°C

PD20

0.16

W/°C

Total Power Dissipation (Note 1)

@ TA = 25°C

Derate above 25°C

PD1.75

0.014

W/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg −55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 6.25 °C/W

Thermal Resistance, Junction−to−Ambient (Note 1) RqJA 71.4 °C/W

Lead Temperature for Soldering TL260 °C

1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)

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ELECTRICAL CHARACTERISTICS

(TA = 25_C, common for NPN and PNP, minus sign, “−”, for PNP omitted, unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 30 mA, IB = 0)

VCEO(sus) 80 Vdc

Collector Cutoff Current

(VCE = Rated VCEO, VBE = 0)

ICES 1.0 mA

Emitter Cutoff Current

(VEB = 5 Vdc)

IEBO 1.0 mA

ON CHARACTERISTICS

Collector−Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.4 Adc)

VCE(sat) 1 Vdc

Base−Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)

VBE(sat) 1.5 Vdc

DC Current Gain

(VCE = 1 Vdc, IC = 2 Adc)

hFE 60 −

DC Current Gain

(VCE = 1 Vdc, IC = 4 Adc)

DYNAMIC CHARACTERISTICS

Collector Capacitance

(VCB = 10 Vdc, ftest = 1 MHz) MJD44H11, NJVMJD44H11G,/T4G/RLG

MJD45H11, NJVMJD45H11T4G/RLG

Ccb

130

Gain Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) MJD44H11, NJVMJD44H11G,/T4G/RLG

MJD45H11, NJVMJD45H11T4G/RLG

MHz

SWITCHING TIMES

Delay and Rise Times

(IC = 5 Adc, IB1 = 0.5 Adc) MJD44H11, NJVMJD44H11G,/T4G/RLG

MJD45H11, NJVMJD45H11T4G/RLG

td + tr

300

135

Storage Time

(IC = 5 Adc, IB1 = IB2 = 0.5 Adc) MJD44H11, NJVMJD44H11G,/T4G/RLG

MJD45H11, NJVMJD45H11T4G/RLG

500

Fall Time

(IC = 5 Adc, IB1 = IB2 = 0.5 Adc MJD44H11, NJVMJD44H11G,/T4G/RLG

MJD45H11, NJVMJD45H11T4G/RLG

140

100

MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)

http://onsemi.com

t, TIME (ms)

0.01

1 k

0.3

0.2

0.07

r(t), EFFECTIVE TRANSIENT THERMAL

RqJC(t) = r(t) RqJC

RqJC = 6.25°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

0.01

RESISTANCE (NORMALIZED)

0.7

Figure 1. Thermal Response

0.5

0.1

0.05

0.03

0.02

0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500

0.2

SINGLE PULSE

D = 0.5

0.1

0.02

0.01

0.05

IC, COLLECTOR CURRENT (AMP)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.02 3 100

0.5

0.1

THERMAL LIMIT @ TC = 25°C

WIRE BOND LIMIT

5 7 20 7010

100ms

0.05

0.3

5030

Figure 2. Maximum Forward Bias

Safe Operating Area

1ms

500ms

5ms

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 2 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. TJ(pk) may be calculated from the data in

Figure 1. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

T, TEMPERATURE (°C)

050 75 100 125 150

PD, POWER DISSIPATION (WATTS)

2.5

1.5

0.5

TATC

Figure 3. Power Derating

SURFACE

MOUNT

MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)

http://onsemi.com

Figure 4. MJD44H11 DC Current Gain Figure 5. MJD45H11 DC Current Gain

IC, COLLECTOR CURRENT (A)

1010.10.01

100

1000

Figure 6. MJD44H11 DC Current Gain Figure 7. MJD45H11 DC Current Gain

Figure 8. MJD44H11 Saturation Voltage

VCE(sat)

Figure 9. MJD45H11 Saturation Voltage

VCE(sat)

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

1010.10.01

0.1

0.2

0.3

0.4

0.6

0.7

0.8

hFE, DC CURRENT GAINVCE(sat), COLL−EMIT SATURATION VOLTAGE (V)

150°C

−55°C

25°C

VCE = 1 V

IC, COLLECTOR CURRENT (A)

1010.10.01

100

1000

hFE, DC CURRENT GAIN

150°C

−55°C

25°C

VCE = 1 V

IC, COLLECTOR CURRENT (A)

1010.10.01

100

1000

hFE, DC CURRENT GAIN

150°C

−55°C

25°C

VCE = 4 V

IC, COLLECTOR CURRENT (A)

1010.10.01

100

1000

hFE, DC CURRENT GAIN

150°C

−55°C

25°C

VCE = 4 V

0.5

150°C

−55°C

25°C

IC/IB = 20

IC, COLLECTOR CURRENT (A)

1010.10.01

0.1

0.2

0.3

0.4

0.6

0.7

0.8

VCE(sat), COLL−EMIT SATURATION VOLTAGE (V)

0.5

150°C

−55°C

25°C

IC/IB = 20

MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)

http://onsemi.com

Figure 10. MJD44H11 Saturation Voltage

VBE(sat)

Figure 11. MJD45H11 Saturation Voltage

VBE(sat)

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

1010.10.01

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Figure 12. MJD44H11 Collector Saturation

Region

Figure 13. MJD45H11 Collector Saturation

Region

IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)

10,00010001001010.1

0.4

0.2

0.6

1.0

1.4

1.8

2.0

Figure 14. MJD44H11 Capacitance Figure 15. MJD45H11 Capacitance

VR, REVERSE VOLTAGE (V)

1001010.1

100

1000

VBE(sat), BASE−EMIT SATURATION

VOLTAGE (V)

VCE, COLLECTOR−EMITTER VOLTAGE (V)C, CAPACITANCE (pF)

150°C

−55°C

25°C

IC/IB = 20

1010.10.01

0.2

0.4

0.6

0.8

1.0

1.2

1.4

VBE(sat), BASE−EMIT SATURATION

VOLTAGE (V)

150°C

−55°C

25°C

IC/IB = 20

0.8

1.2

1.6

TA = 25°C

IC = 8 A

1 A IC = 3 A

0.5 AIC = 0.1 A

10,00010001001010.1

0.4

0.2

0.6

1.0

1.4

1.8

2.0

VCE, COLLECTOR−EMITTER VOLTAGE (V)

0.8

1.2

1.6

TA = 25°C

Cob

VR, REVERSE VOLTAGE (V)

1001010.1

100

1000

C, CAPACITANCE (pF)

Cob

IC = 8 A

1 A

IC = 3 A

0.5 A

IC = 0.1 A

MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)

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Figure 16. MJD44H11

Current−Gain−Bandwidth Product

Figure 17. MJD45H11

Current−Gain−Bandwidth Product

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

1010.10.01

100

1010.10.01

100

fTau , CURRENT−GAIN−BANDWIDTH

PRODUCT

fTau , CURRENT−GAIN−BANDWIDTH

PRODUCT

VCE = 2 V VCE = 2 V

ORDERING INFORMATION

Device Package Type Package Shipping†

MJD44H11G DPAK

(Pb−Free)

369C

75 Units / Rail

NJVMJD44H11G DPAK

(Pb−Free)

MJD44H11−1G DPAK−3

(Pb−Free) 369D

MJD44H11RLG DPAK

(Pb−Free)

369C

1,800 / Tape & Reel

NJVMJD44H11RLG DPAK

(Pb−Free)

MJD44H11T4G DPAK

(Pb−Free)

2,500 / Tape & Reel

NJVMJD44H11T4G DPAK

(Pb−Free)

MJD44H11T5G DPAK

(Pb−Free)

MJD45H11G DPAK

(Pb−Free)

75 Units / Rail

MJD45H11−1G DPAK−3

(Pb−Free) 369D

MJD45H11RLG DPAK

(Pb−Free)

369C

1,800 / Tape & Reel

NJVMJD45H11RLG DPAK

(Pb−Free)

MJD45H11T4G DPAK

(Pb−Free)

2,500 / Tape & Reel

NJVMJD45H11T4G DPAK

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)

http://onsemi.com

PACKAGE DIMENSIONS

DPAK

CASE 369C

ISSUE D

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

5.80

0.228

2.58

0.101

1.6

0.063

6.20

0.244

3.0

0.118

6.172

0.243

ǒmm

inchesǓ

SCALE 3:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

0.005 (0.13) C

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

D0.235 0.245 5.97 6.22

E0.250 0.265 6.35 6.73

A0.086 0.094 2.18 2.38

b0.025 0.035 0.63 0.89

c2 0.018 0.024 0.46 0.61

b2 0.030 0.045 0.76 1.14

c0.018 0.024 0.46 0.61

e0.090 BSC 2.29 BSC

b3 0.180 0.215 4.57 5.46

L4 −−− 0.040 −−− 1.01

L0.055 0.070 1.40 1.78

L3 0.035 0.050 0.89 1.27

Z0.155 −−− 3.93 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-

MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS, OR BURRS. MOLD

FLASH, PROTRUSIONS, OR GATE BURRS SHALL

NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE

OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM

PLANE H.

12 3

H0.370 0.410 9.40 10.41

A1 0.000 0.005 0.00 0.13

L1 0.108 REF 2.74 REF

L2 0.020 BSC 0.51 BSC

DETAIL A

SEATING

PLANE

L2 GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)

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PACKAGE DIMENSIONS

123

−T−

SEATING

PLANE

D3 PL

0.13 (0.005) T

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.245 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.018 0.023 0.46 0.58

F0.037 0.045 0.94 1.14

G0.090 BSC 2.29 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.350 0.380 8.89 9.65

R0.180 0.215 4.45 5.45

S0.025 0.040 0.63 1.01

V0.035 0.050 0.89 1.27

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

Z0.155 −−− 3.93 −−−

IPAK

CASE 369D

ISSUE C

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications

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Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

MJD44H11/D

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