1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
2600 MHz to 2700 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, rega rd in g Re stri ctio n of Hazard ou s Sub stances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2600 MHz to 2700 MHz frequency range
BLF7G27L-200PB
Power LDMOS transistor
Rev. 2 — 20 February 2012 Product data sheet
Table 1. Typical performance
Ty pical RF performance at Tcase = 25
C in a common source class-AB production test circuit.
Mode of operation f IDq VDS PL(AV) GpDACPR
(MHz) (mA) (V) (W) (dB) (%) (dBc)
2-carrier W-CDMA 2620 to 2690 1700 32 65 16.5 29 30[1]
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Product data sheet Rev. 2 — 20 February 2012 2 of 14
NXP Semiconductors BLF7G27L-200PB
Power LDMOS transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
5. Thermal characteristics
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1drain1
2drain2
3gate1
4gate2
5source [1]
6, 7 sense drain
8, 9 sense gate
61 27
83 49
5
sym127
1
2
5
4
3 8, 9
6, 7
Table 3. Ordering information
Type number Package
Name Description Version
BLF7G27L-200PB - flanged LDMOST ceramic package; 2 mounting holes;
8 leads SOT1110A
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V
Tstg storage temperature 65 +150 C
Tjjunction temperature - 200 C
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tcase =80C; PL=65W;
VDS =32V; I
Dq =1700mA 0.22 K/W
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Product data sheet Rev. 2 — 20 February 2012 3 of 14
NXP Semiconductors BLF7G27L-200PB
Power LDMOS transistor
6. Characteristics
7. Test information
Remark: All testing performed in a class-AB production test circuit.
7.1 Ruggedness in class-AB operation
The BLF7G27L -2 00 PB is capable of withstandin g a loa d mis m atc h co rr esp o ndi ng to
VSWR = 10 : 1 through all phases under the following conditions: VDS =32V;
IDq = 1700 mA; PL= 200 W (CW); f = 2600 MHz.
Table 6. Characteristics
Tj = 25
C per section, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D=1.44mA65--V
VGS(th) gate-source threshold voltage VDS =10 V; I
D= 144 mA 1.5 1.9 2.3 V
IDSS drain leakage current VGS =0V; V
DS =28V--2.8A
IDSX drain cut-off current VGS =V
GS(th) +3.75 V;
VDS =10V -28-A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 280 nA
gfs forward transconductance VDS =10V; I
D= 7.2 A - 10.6 - S
RDS(on) drain-source on-state resistance VGS =V
GS(th) + 3.75 V;
ID=5.04A -0.1-
IDq quiescent drain current main transistor:
VDS = 32 V
sense transistor:
IDS = 31 mA
VDS = 30.1 V
1530 1700 1870 mA
Table 7. Functional test information
Mode of operation: 2-carrier W-CDMA, PAR = 8.4 dB at 0.01 % probability on the CCDF, 3GPP test
model 1; 1-64 DPCH; f1= 2622.5 MHz; f2= 2627.5 MHz; f3= 2682.5 MHz; f4= 2687.5 MHz;
RF performance at VDS =32V; I
Dq = 1700 mA; Tcase =25
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
PL(AV) average output power - 65 - W
Gppower gain 14.8 16.5 17.7 dB
RLin input return loss - 15 5dB
Ddrain efficiency 25.5 29 - %
ACPR adjacent channel power ratio - 30 27 dBc
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Product data sheet Rev. 2 — 20 February 2012 4 of 14
NXP Semiconductors BLF7G27L-200PB
Power LDMOS transistor
7.2 Impedance information
[1] ZS and ZL defined in Figure 1.
7.3 1 Tone CW
Table 8. Typical impedance
Measured load-pull data half device; IDq = 850 mA; VDS = 32 V.
f ZS[1] ZL[1]
(MHz) () ()
2500 3.07 j3.51 2.79 j4.86
2600 4.51 j12.51 2.61 j4.49
2700 7.56 j15.0 2.36 j4.41
Fig 1. Definition of transis tor imp e danc e
001aaf059
drain
Z
L
Z
S
gate
VDS = 32 V; IDq = 1700 mA.
(1) f = 2600 MHz
(2) f = 2650 MHz
(3) f = 2700 MHz
VDS = 32 V; IDq = 1700 mA.
(1) f = 2600 MHz
(2) f = 2650 MHz
(3) f = 2700 MHz
Fig 2. Power gain as a function of average load
power; typical values Fig 3. Drain efficiency as a fun ctio n o f average load
power; typical values
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Product data sheet Rev. 2 — 20 February 2012 5 of 14
NXP Semiconductors BLF7G27L-200PB
Power LDMOS transistor
7.4 1-carrier W-CDMA
VDS =32V; I
Dq = 1700 mA; PAR = 7.2 dB at 0.01
probability on the CCDF.
(1) Gp; f = 2620 MHz
(2) Gp; f = 2650 MHz
(3) Gp; f = 2690 MHz
(4) D; f = 2620 MHz
(5) D; f = 2650 MHz
(6) D; f = 2690 MHz
VDS = 32 V; IDq = 1700 mA; PAR = 7.2 dB at 0.01
probability on the CCDF.
(1) f = 2620 MHz
(2) f = 2650 MHz
(3) f = 2690 MHz
Fig 4. Power gain and drain efficiency as function of
average load power; typi cal values Fig 5. Peak-to-average power ratio as a functio n of
peak power; typica l va l ues
VDS = 32 V; IDq = 1700 mA; PAR = 7.2 dB at 0.01 probability on the CCDF.
(1) f = 2620 MHz
(2) f = 2650 MHz
(3) f = 2690 MHz
Fig 6. Adjacent power channel ratio (5 MHz) as a function of average load power; typical values
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BLF7G27L-200PB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 20 February 2012 6 of 14
NXP Semiconductors BLF7G27L-200PB
Power LDMOS transistor
7.5 2-carrier W-CDMA
VDS =32V; I
Dq = 1700 mA; f = 2650 MHz;
channel spacing = 5 MHz; PAR = 8.4 dB at 0.01
probability on the CCDF.
VDS = 32 V; IDq = 1700 mA; channel spacing = 5 MHz;
PAR = 8.4 dB at 0.01 probability on the CCDF.
(1) f = 2620 MHz
(2) f = 2650 MHz
(3) f = 2690 MHz
Fig 7. Power gain and drain efficiency as function of
average load power; typi cal values Fig 8. Power gain as a function of average load
power; typical values
VDS = 32 V; IDq = 1700 mA; channel spacing = 5 MHz;
PAR = 8.4 dB at 0.01 probability on the CCDF.
(1) f = 2620 MHz
(2) f = 2650 MHz
(3) f = 2690 MHz
VDS = 32 V; IDq = 1700 mA; channel spacing = 5 MHz;
PAR = 8.4 dB at 0.01 probability on the CCDF.
(1) f = 2620 MHz
(2) f = 2650 MHz
(3) f = 2690 MHz
Fig 9. Drain efficie ncy as a function of average load
power; typical values Fig 10. Adjacent power channe l ratio (5 MHz) as a
function of average load power; typical valu es
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BLF7G27L-200PB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 20 February 2012 7 of 14
NXP Semiconductors BLF7G27L-200PB
Power LDMOS transistor
7.6 IS-95
VDS =32V; I
Dq = 1700 mA.
(1) f = 2600 MHz
(2) f = 2650 MHz
(3) f = 2700 MHz
VDS = 32 V; IDq = 1700 mA.
(1) f = 2600 MHz
(2) f = 2650 MHz
(3) f = 2700 MHz
Fig 1 1. Single carrier IS-95 pow er gain as a function of
average output power; typical values Fig 12. Single carrier IS-95 drain efficiency as a
function of average load power; typical valu es
VDS = 32 V; IDq = 1700 mA.
(1) f = 2600 MHz
(2) f = 2650 MHz
(3) f = 2700 MHz
VDS = 32 V; IDq = 1700 mA.
(1) f = 2600 MHz
(2) f = 2650 MHz
(3) f = 2700 MHz
Fig 13. Single carrier IS-95 AC PR at 88 5 kH z as a
function of average output power;
typical values
Fig 14. Single carrier IS-95 at ACPR at 1980 kHz as a
function of average output power; typical
values
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BLF7G27L-200PB All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 20 February 2012 8 of 14
NXP Semiconductors BLF7G27L-200PB
Power LDMOS transistor
7.7 Test circuit
[1] Murata or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
[3] American Technical Ceramics type 100A or capacitor of same quality.
[4] AVX or capacitor of same quality.
[5] TDK or capacitor of same quality.
[6] Philips or resistor of same quality.
See Table 9 for list of components.
Fig 15. Component layout
Table 9. List of components
See Figure 15 for component layout.
The used PCB material is Rogers RO4350B with a thickness of 0.76 mm.
Component Description Value Remarks
C1, C6, C13 multilayer ceramic chip capacitor 4.7 F[1] Murata
C2, C4 multilayer ceramic chip capacitor 9.1 pF [2] ATC100B
C3 multilayer ceramic chip capacitor 22 pF [3] ATC100A
C5, C10, C11 multilayer ceramic chip capacitor 8.2 pF [2] ATC100B
C7 multilayer ceramic chip capacitor 470 nF [4] AVX
C8, C12 multilayer ceramic chip capacitor 10 F[5] TDK
C9 electrolytic capacitor 470 F
R1 chip resistor 820 [6] Philips 0603
R2 chip resistor 2K2 [6] Philips 0603
R3 chip resistor 22 [6] Philips 0603
R4, R6 chip resistor 10 [6] Philips 0603
R5 chip resistor 33 [6] Philips 0603
C9
C8
C7
C6
C5
C10
C12
C11
C13
R6
R5
C3
R4
C2
R3
R1
C1
C4
R2
aaa-001942
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Product data sheet Rev. 2 — 20 February 2012 9 of 14
NXP Semiconductors BLF7G27L-200PB
Power LDMOS transistor
8. Package outline
Fig 16. Package outline SOT11 10A
References
Outline
version European
projection Issue date
IEC JEDEC JEITA
SOT1110A 09-11-20
10-02-02
Flanged LDMOST ceramic package; 2 mounting holes; 8 leads SOT1110A
b
E
E1
Q
c
D
D1
L
AF
A
U2
H
Aw1B
Dw2
p
B
C
q
H1
U1
e
w3
b1
4
5
3
2
89
61 7
sot1110a_po
Unit(1)
mm max
nom
min
5.36
3.99
1.14
0.89
0.18
0.10
31.55
30.94
31.52
30.96
9.50
9.30
1.75
1.50
17.12
16.10
3.30
3.05
10.29
10.03
A
Dimensions
bcDD
1EE
1
9.53
9.27
FHH
1
25.53
25.27
pQ
(2)
2.26
2.01
q
35.56
U1
41.28
41.02
U2w1
0.51
inches max
nom
min
0.211
0.157
0.045
0.035
11.81
11.56
b1
0.465
0.455
0.007
0.004
13.72
e
0.540
1.242
1.218
1.241
1.219
0.374
0.366
0.069
0.059
0.674
0.634
0.13
0.12
0.405
0.395
0.375
0.365
1.005
0.995
L
2.67
2.41
0.105
0.095
0.089
0.079 1.4 1.625
1.615
0.25
0.01 0.02
w2
5.97
5.72
w3
0.25
Zα
0.235
0.225
64°
62°
64°
62°
0.01
0 5 10 mm
scale
Z
α
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
3. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
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Product data sheet Rev. 2 — 20 February 2012 10 of 14
NXP Semiconductors BLF7G27L-200PB
Power LDMOS transistor
9. Handling information
10. Abbreviations
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 10. Abbreviations
Acronym Description
3GPP Third Generation Partnership Project
CCDF Complementary Cumulative Distribution Function
CW Continuous Wave
DPCH Dedicated Physical CHannel
ESD ElectroStatic Discharge
LDMOS Laterally Diffused Metal Oxide Semiconductor
LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor
PAR Peak-to-Average power Ratio
RF Radio Frequency
VSWR Voltage S tanding Wave Ratio
W-CDMA Wideband Code Division Multiple Access
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Product data sheet Rev. 2 — 20 February 2012 11 of 14
NXP Semiconductors BLF7G27L-200PB
Power LDMOS transistor
11. Revision history
Table 11. Revision history
Document ID Release date Dat a sh e et status Change notice Supersedes
BLF7G27L-200PB v.2 20120220 Product data sheet - BLF7G27L-200PB_
27LS-200PB v.1
Modifications: •This document now only describes the BLF7G27L-200PB product.
•Table 1 on page 1: Some changes have been made.
•Section 1.2 on page 1: Some changes have been made.
•Section 1.3 on page 1: Some changes have been made.
•Table 4 on page 2: The line specifying ID has been remo ved from the table.
•Table 5 on page 2: Some changes have been made.
•Table 6 on page 3: Some changes have been made.
•Table 7 on page 3: Some changes have been made.
•Section 7.1 on page 3: Some changes have been made.
•Table 8 on page 4: Some changes have been made
•Section 7.2 on page 4: Section has been added.
•Section 7.3 on page 4: Section has been added.
•Section 7.4 on page 5: Section has been added.
•Section 7.5 on page 6: Section has been added.
•Section 7.6 on page 7: Section has been added.
•Section 7.7 on page 8: Section has been added.
BLF7G27L-200PB_27LS-200PB v.1 20110405 Objective data sheet - -
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Product data sheet Rev. 2 — 20 February 2012 12 of 14
NXP Semiconductors BLF7G27L-200PB
Power LDMOS transistor
12. Legal information
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[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
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the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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Characteristics sections of this document is not warranted. Constant or
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Document status[1][2] Product status[3] Definition
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Product [short] dat a sheet Production This document contains the product specification.
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Product data sheet Rev. 2 — 20 February 2012 13 of 14
NXP Semiconductors BLF7G27L-200PB
Power LDMOS transistor
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13. Contact information
For more information, please visit: http://www.nxp.com
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NXP Semiconductors BLF7G27L-200PB
Power LDMOS transistor
© NXP B.V. 2012. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 February 2012
Document identifier: BLF7G27L-200PB
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 2
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation . . . . . . . . . 3
7.2 Impedance information. . . . . . . . . . . . . . . . . . . 4
7.3 1 Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.4 1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5
7.5 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
7.6 IS-95. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
7.7 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Handling information. . . . . . . . . . . . . . . . . . . . 10
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13 Contact information. . . . . . . . . . . . . . . . . . . . . 13
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
