MMBT2222A NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMBT2222A Features * * * * Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT2907A) Ideal for Medium Power Amplification and Switching Also Available in Lead Free Version SOT-23 A C B Mechanical Data * * * * * * * * * Maximum Ratings D E G H K J Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0 8 C B TOP VIEW E Case: SOT-23, Molded Plastic Case material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Also Available in Lead Free Plating (Matte Tin Finish). Please see Ordering Information, Note 4, on Page 2 Terminal Connections: See Diagram Marking (See Page 2): K1P Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approx.) Dim M L C All Dimensions in mm E B @ TA = 25C unless otherwise specified Symbol MMBT2222A Unit Collector-Base Voltage Characteristic VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous (Note 1) IC 600 mA Power Dissipation (Note 1) Pd 300 mW RqJA 417 C/W Tj, TSTG -55 to +150 C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. DS30041 Rev. 7 - 2 1 of 4 www.diodes.com MMBT2222A a Diodes Incorporated Electrical Characteristics @ TA = 25C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 75 3/4 V Collector-Emitter Breakdown Voltage V(BR)CEO 40 3/4 V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 3/4 V IE = 10mA, IC = 0 Collector Cutoff Current ICBO 3/4 10 nA mA VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = 150C Collector Cutoff Current ICEX 3/4 10 nA VCE = 60V, VEB(OFF) = 3.0V Emitter Cutoff Current IEBO 3/4 10 nA VEB = 3.0V, IC = 0 IBL 3/4 20 nA VCE = 60V, VEB(OFF) = 3.0V hFE 35 50 75 100 40 50 35 3/4 3/4 3/4 300 3/4 3/4 3/4 3/4 IC = 100mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 10mA, VCE = 10V, TA = -55C IC = 150mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) 3/4 0.3 1.0 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage VBE(SAT) 0.6 3/4 1.2 2.0 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Output Capacitance Cobo 3/4 8 pF VCB = 10V, f = 1.0MHz, IE = 0 Input Capacitance Cibo -- 25 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Current Gain-Bandwidth Product fT 300 3/4 MHz VCE = 20V, IC = 20mA, f = 100MHz Noise Figure NF 3/4 4.0 dB VCE = 10V, IC = 100mA, RS = 1.0kW, f = 1.0kHz Delay Time td 3/4 10 ns Rise Time tr 3/4 25 ns Storage Time ts 3/4 225 ns Fall Time tf 3/4 60 ns OFF CHARACTERISTICS (Note 2) Base Cutoff Current IC = 10mA, IE = 0 ON CHARACTERISTICS (Note 2) DC Current Gain SMALL SIGNAL CHARACTERISTICS SWITCHING CHARACTERISTICS Ordering Information Note: VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA (Note 3) Device Packaging Shipping MMBT2222A-7 SOT-23 3000/Tape & Reel 2. Short duration test pulse used to minimize self-heating effect. 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 4. For Lead Free version (with Lead Free terminal finish) part number, please add "-F" suffix to part number above. Example: MMBT2222A-7-F. Marking Information YM K1P = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September K1P Date Code Key Year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 Code J K L M N P R S T U V W Month Jan Feb March Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30041 Rev. 7 - 2 2 of 4 www.diodes.com MMBT2222A 1000 hFE, DC CURRENT GAIN PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 TA = 125C 100 TA = -25C TA = +25C 10 50 VCE = 1.0V 0 0 25 50 75 100 150 125 175 1 200 0.1 TA, AMBIENT TEMPERATURE (C) Fig. 1 Max Power Dissipation vs Ambient Temperature 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs Collector Current 2.0 CAPACITANCE (pF) 20 VCE, COLLECTOR-EMITTER VOLTAGE (V) 30 Cibo 10 5.0 Cobo 1.6 1.0 IC = 300mA 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 50 10 IC = 100mA 1.4 1.0 0.1 IC = 30mA IC = 1mA IC = 10mA 1.8 REVERSE VOLTS (V) Fig. 3 Typical Capacitance 100 10 1 IB, BASE CURRENT (mA) Fig. 4 Typical Collector Saturation Region 1.0 IC IB = 10 0.4 TA = 25C 0.3 TA = 150C 0.2 0.1 TA = -50C 0 VBE(ON), BASE EMITTER VOLTAGE (V) 0.5 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.1 0.01 VCE = 5V 0.9 TA = -50C 0.8 0.7 TA = 25C 0.6 0.5 TA = 150C 0.4 0.3 0.2 10 1 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 5 Collector Emitter Saturation Voltage vs. Collector Current DS30041 Rev. 7 - 2 3 of 4 www.diodes.com 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Base Emitter Voltage vs. Collector Current MMBT2222A fT, GAIN BANDWIDTH PRODUCT (MHz) 1000 VCE = 5V 100 10 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 7 Gain Bandwidth Product vs. Collector Current DS30041 Rev. 7 - 2 4 of 4 www.diodes.com MMBT2222A