DSEP2x31-12A HiPerFRED VRRM = 1200 V I FAV = 2x 30 A t rr = 40 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Parallel legs Part number DSEP2x31-12A Backside: isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B (minibloc) Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Isolation Voltage: 3000 V~ Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Base plate: Copper internally DCB isolated Advanced power cycling Terms and Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2018 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20180806d DSEP2x31-12A Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C VRRM max. repetitive reverse blocking voltage TVJ = 25C 1200 IR reverse current, drain current VF forward voltage drop I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case min. typ. max. Unit 1200 V V VR = 1200 V TVJ = 25C 250 A VR = 1200 V TVJ = 150C 1 mA IF = 30 A TVJ = 25C 2.72 V IF = 60 A 3.24 V IF = 30 A 1.77 V IF = 60 A TVJ = 150 C TC = 75 C rectangular 2.26 V T VJ = 150 C 30 A TVJ = 150 C 1.31 V 15.4 m d = 0.5 for power loss calculation only 1.15 K/W K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C VR = 600 V f = 1 MHz TVJ = 25C 12 pF TVJ = 25 C 8.5 A TVJ = 100 C 13 A TVJ = 25 C 60 ns TVJ = 100 C 170 ns CJ junction capacitance I RM max. reverse recovery current t rr reverse recovery time 0.10 TC = 25C IF = IXYS reserves the right to change limits, conditions and dimensions. (c) 2018 IXYS all rights reserved 30 A; VR = 600 V -di F /dt = 200 A/s 100 200 Data according to IEC 60747and per semiconductor unless otherwise specified W A 20180806d DSEP2x31-12A Package Ratings SOT-227B (minibloc) Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 100 Unit A -40 150 C -40 125 C 150 C 30 Weight g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL terminal to terminal 10.5 terminal to backside 8.6 t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL 1 mA 3.2 mm 6.8 mm 3000 V 2500 V Product Marking Part No. Logo XXXXX (R) Zyyww abcd Assembly Line DateCode Ordering Standard Assembly Code Ordering Number DSEP2x31-12A Equivalent Circuits for Simulation I V0 R0 Marking on Product DSEP2x31-12A * on die level Delivery Mode Tube Code No. 473286 T VJ = 150 C Fast Diode V 0 max threshold voltage 1.31 V R0 max slope resistance * 13.5 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2018 IXYS all rights reserved Quantity 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20180806d DSEP2x31-12A Outlines SOT-227B (minibloc) 2 1 3 4 IXYS reserves the right to change limits, conditions and dimensions. (c) 2018 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20180806d DSEP2x31-12A Fast Diode 70 5 60 TVJ = 100C VR = 600 V 60 TVJ = 150C 50 50 4 100C 25C IF = 60 A IF = 60 A IF 40 Qr 30 A 15 A 3 30 A 15 A 40 IRM 30 [A] 30 [A] [C] 2 20 20 1 10 10 0 0 1 2 3 0 100 4 2.0 VR = 600 V 0 1000 0 200 400 600 800 1000 -diF /dt [A/s] -diF /dt [A/s] Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt Fig. 3 Typ. peak reverse current IRM versus -diF /dt VF [V] Fig. 1 Forward current IF versus VF TVJ = 100C 120 220 VR = 600 V IF = 30 A 100 200 1.2 TVJ = 100C TVJ = 100C 1.0 1.5 IF = 60 A trr 180 30 A 15 A Kf 1.0 80 0.8 60 0.6 40 0.4 20 0.2 VFR [ns] 160 trr [s] [V] IRM 0.5 140 QR trr VFR 0.0 120 0 40 80 120 160 0 0 200 400 600 800 1000 0 200 -diF /dt [A/s] TVJ [C] 600 800 0.0 1000 -diF /dt [A/s] Fig. 5 Typ. recovery time trr versus -diF /dt Fig. 4 Typ. dynamic parameters Qr, IRM versus TVJ 400 Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 2 1 0.1 Constants for ZthJC calculation: ZthJC [K/W] 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 i Rthi (K/W) ti (s) 1 0.368 0.0052 2 0.1417 0.0003 3 0.0295 0.0004 4 0.5604 0.0092 1 t [s] Fig. 7 Transient thermal impedance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2018 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20180806d