©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002
TIP140F/141F/142F
NPN Epitaxial Darlington Transistor
Absolute Maximum Ratings TC=25°C u nless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage : TIP140F
: TIP141 F
: TIP142 F
60
80
100
V
V
V
VCEO
Collector-Emitter Voltage : TIP140F
: TIP141 F
: TIP142 F
60
80
100
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 10 A
ICP Collector Current (Pulse) 15 A
IB Base Current (DC) 0.5 A
PC Collector Dissipation (TC=25°C) 60 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP140F
: TIP141F
: TIP142F
IC = 30mA, IB = 0 60
80
100
V
V
V
ICEO Collector Cut-off Current : TIP140F
: TIP141F
: TIP142F
VCE = 30V, IB = 0
VCE = 40V, IB = 0
VCE = 50V, IB = 0
2
2
2
mA
mA
mA
ICBO Collector Cut-off Current : TIP140F
: TIP141F
: TIP142F
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, IE = 0
1
1
1
mA
mA
mA
IEBO Emitter Cut-o ff Current VBE = 5V, IC = 0 2 mA
hFE DC Current Gain VCE = 4V, IC = 5A
VCE = 4V, IC = 10A 1000
500
VCE(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 10mA
IC = 10A, IB = 40mA 2
3 V
V
VBE(sat) Base-Emitter Saturation Voltage IC = 10A, IB = 40mA 3.5 V
VBE(on) Base-Emitter On Voltage VCE = 4V, IC = 10A 3 V
tD Delay Time VCC = 30V, IC = 5A
IB 1= 20mA, IB2 = -20mA
RL = 6Ω
0.15 µs
tR Rise Time 0.55 µs
tSTG St orage Time 2.5 µs
tF Fall Time 2.5 µs
TIP140F/141F/142F
Monolithic Construction With Built In Base-
Emitter Shunt Resistors
• Complement to TIP145F/146F/147F
• High DC Current Gain : hFE = 1000 @ VCE = 4 V , IC = 5A (Min.)
• Industrial Use
Equivalent Circuit
B
E
C
R1 R2
R
18
k
Ω≅
R
20.12
k
Ω≅
TO-3PF
1.Base 2.Collector 3.Emitter
1
©2002 Fairchild Semiconductor Corporation
TIP140F/141F/142F
Rev. B1, December 2002
Typical Characteristics
Figure 1. Static Characteristics Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
012345
0
1
2
3
4
5
6
7
8
9
10 IB = 2000uA
IB = 1800uA
IB = 1600uA
IB = 1400uA
I
B
= 1200uA
I
B
= 1000uA
IB = 800uA
IB = 600uA
IB = 400uA
IB = 200uA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMIT TER VO L T AGE
0.1 1 10 100
10
100
1k
10k
100k
VCE = 4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10 100
0.01
0.1
1
10 IC=500IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
1 10 100 1000
10
100
1000 f=0.1MHz
VCB[V], COLLE CTO R -BA SE VOLTAGE
Cob[pF], CAPA C IT AN CE
1 10 100 1000
0.1
1
10
100
TIP141F
TIP142F
TIP140F
DC
IC[A], COLLECTOR CU R RE N T
VCE[V], CO L LECTOR-EMITTER VOL TAG E
0 25 50 75 100 125 150 175
0
20
40
60
80
100
PC[W], POWER DISSIPA TION
TC[oC], CA SE TEMPERATURE
Package Dimensions
©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002
TIP140F/141F/142F
Dimensions in Millimeters
15.50
±0.20
ø3.60
±0.20
26.50
±0.20
4.50
±0.20
10.00
±0.20
16.50
±0.20
10°
16.50
±0.20
22.00
±0.20
23.00
±0.20
1.50
±0.20
14.50
±0.20
2.00
±0.20
2.00
±0.20
2.00
±0.20
0.85
±0.03
2.00
±0.20
5.50
±0.20
3.00
±0.20
(1.50)
3.30
±0.20
2.00
±0.20
4.00
±0.20
2.50
±0.20
14.80
±0.20
3.30
±0.20
2.00
±0.20
5.50
±0.20
0.75
+0.20
–0.10
0.90
+0.20
–0.10
5.45TYP
[5.45
±0.30
]5.45TYP
[5.45
±0.30
]
TO-3PF
©2002 Fairchild Semiconductor Corporation Rev. I1
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