MBR10100CD
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE – 100
FORWARD CURRENT – 10 Amperes
DPAK
FEATURES
•
Metal of silicon rectifier, majority carrier conduction
•
Guard ring for transient protection
•
Low power loss, high efficiency
•
High surge & current capability, low VF
•
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
MECHANICAL DATA
•
Case: DPAK molded plastic
•
Plastic package has UL flammability classification
94V-0
•
Terminals: Matte Tin
•
Lead Free Finish, RoHS Compliant
•
Polarity: As marked on the body
•
Weight: 0.0011 ounces, 0.0315 grams
•
Mounting position: Any
DPAK
DIM MIN. MAX.
A 2.20
2.40
A1 0.00
0.13
b 0.66
0.86
c 0.46
0.58
D 6.50
6.70
D1 5.10
5.46
D2 4.83 REF.
E 6.00
6.20
e 2.19
2.39
L 9.80
10.40
L1 2.90 REF.
L2 1.40
1.70
L3 1.6 REF.
L4 0.60
1.00
Φ 1.10
1.30
θ 0° 8°
h 0.00
0.30
V 5.35 REF.
All Dimension in millmeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
°C
ambient temperature unless otherwise specified.
PARAMETER SYMBOL
MBR10100CD UNIT
Maximum Repetitive Peak Reverse Voltage
@IR=100uA V
RRM
100 V
Maximum DC Blocking Voltage @IR=100uA V
DC
100 V
Average Rectified Output Current @Tc=105°C I
F
10 A
Peak Forward Surge Current single half
sine-wave superimposed on rated load
@1ms
@8.3ms I
FSM
300
150 A
Maximum Forward Voltage
Note(1)
IF=5A@
IF=5A@
IF=10A@
IF=10A@
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
F
0.85
0.75
0.95
0.85
V
Maximum DC Reverse Current at Rated DC
Blocking Voltage
Tj=25°C
Tj=125°C IR 10
15
uA
mA
Typical thermal resistance Junction to Case
Typical thermal resistance Junction to Lead
Typical thermal resistance Junction to Ambient
( With heatsink,decive mounted on 50mmx50mmx2mm
copper plate)
RthJC
RthJL
RthJA
6.5
6.5
20
°C/W
Typical thermal resistance Junction to Case
Typical thermal resistance Junction to Lead
Typical thermal resistance Junction to Ambient
( Without heatsink )
RthJC
RthJL
RthJA
26
26
66
°C/W
Typical junction Capacitance per element (Note 2) Cj 300 pF
Operating junction temperature range T
J
-55 to +150 °C
Storage temperature range T
STG
-55 to +150 °C
Note : REV. 0, Nov-2011, KSHB23
(1) 300us Pulse Width, 2% Duty Cycle.
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 V
DC
.
1
2
3