CYStech Electronics Corp.
Spec. No. : C610E3
Issued Date : 2003.09.04
Revised Date :
Page No. : 1/4
TIP32CE3 CYStek Product Specification
3A PNP Epitaxial Planar Power Transistor
TIP32CE3
Description
TIP32CE3 is designed for use in general purpose amplifier and switching applications.
Features
Low collector-emitter saturation voltage, VCE(sat) = -1.2V(max) @ IC = -3A
High collector-emitter sustaining voltage, BVCEO(SUS) = -100V(min)
High current gain-bandwidth product , fT = 3MHz(min) @ IC = -500mA
Symbol Outline
Absolute Maximum Ratings (Ta=25°C)
Parameter Symbol Limits Unit
Collector-Base Voltage VCBO -100 V
Collector-Emitter Voltage VCEO -100 V
Emitter-Base Voltage VEBO -5 V
Collector Current (DC) IC -3
Collector Current (Pulse) ICP -5 (Note 1) A
Base Current IB -1 A
Power Dissipation @ TA=25 PD 2
Power Dissipation @ TC=25 PD 40 W
Thermal Resistance, Junction to Ambient RθJA 62.5 °C/W
Thermal Resistance, Junction to Case RθJC 3.125
°C/W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55~+150 °C
Note : 1. Single Pulse , Pw380µs, Duty2%.
TIP32CE3
TO-220AB
BBase
CCollector
EEmitter B C E
CYStech Electronics Corp.
Spec. No. : C610E3
Issued Date : 2003.09.04
Revised Date :
Page No. : 2/4
TIP32CE3 CYStek Product Specification
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
*BVCEO(SUS) -100 - - V IC=-30mA, IB=0
ICEO - - -300 µA VCE=-60V, IB=0
ICES - - -200 µA VCE=-100V, VBE=0
IEBO - - -1 mA VEB=-5V, IC=0
*VCE(sat) - - -1.2 V IC=-3A, IB=-375mA
*VBE(on) - - -1.8 V VCE=-4V, IC=-3A
*hFE 25 - - - VCE=-4V, IC=-1A
*hFE 10 - 50 - VCE=-4V, IC=-3A
fT 3 - - MHz VCE=-10V, IC=-500mA, f=1MHz
*Pulse Test : Pulse Width 380µs, Duty Cycle2%
CYStech Electronics Corp.
Spec. No. : C610E3
Issued Date : 2003.09.04
Revised Date :
Page No. : 3/4
TIP32CE3 CYStek Product Specification
Characteristic Curves
Current Gain vs Collector Current
10
100
1 10 100 1000 10000
Collector Current---IC(mA)
Current Gain---H FE
VCE=2V
VCE=4V
Saturation Voltage vs Collector Current
10
100
1000
10000
1 10 100 1000 10000
Collector Current---IC(mA)
Saturation Voltage---(mV)
VCE(SAT)@IC=10IB
VBE(SAT)@IC=10IB
ON Voltage vs Collector Current
100
1000
10000
1 10 100 1000 10000
Collector Current---IC(mA)
ON Voltage---VBE(ON)(mV)
VCE=2V
Power Derating Curve
0
5
10
15
20
25
30
35
40
45
0 50 100 150 200
Case Temperature---Tc(℃)
Power Dissipation---PD(W)
Power Derating Curve
0
0.5
1
1.5
2
2.5
0 50 100 150 200
Ambient Temperature---TA(℃)
Power Dissipation---PD(W)
CYStech Electronics Corp.
Spec. No. : C610E3
Issued Date : 2003.09.04
Revised Date :
Page No. : 4/4
TIP32CE3 CYStek Product Specification
TO-220AB Dimension
*: Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max.
DIM Min. Max. Min. Max.
A 0.2197 0.2949 5.58 7.49 I - *0.1508 - *3.83
B 0.3299 0.3504 8.38 8.90 K 0.0295 0.0374 0.75 0.95
C 0.1732 0.185 4.40 4.70 M 0.0449 0.0551 1.14 1.40
D 0.0453 0.0547 1.15 1.39 N - *0.1000 - *2.54
E 0.0138 0.0236 0.35 0.60 O 0.5000 0.5618 12.70 14.27
G 0.3803 0.4047 9.66 10.28 P 0.5701 0.6248 14.48 15.87
H -
*0.6398 - *16.25
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: 42 Alloy ; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
A B
E
G
IK
M
O
P
3
2
1
C
N
H
D
4Style: Pin 1.Base 2.Collector 3.Emitter
4.Collector
3-Lead TO-220AB Plastic Package
CYStek Package Code: E3
Marking:
TIP32C