SKiM609GAR12E4
© by SEMIKRON Rev. 3 – 14.07.2011 1
SKiM® 93
GAR
Trench IGBT Modules
SKiM609GAR12E4
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
•V
CE(sat) with positive temperature
coefficient
• Low inductance case
• Isolated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts and electrical
contacts
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
Absolute Maximum Ratings
Symbol Conditions Values Unit
IGBT
VCES 1200 V
ICTj= 175 °C Ts=25°C 748 A
Ts=70°C 608 A
ICnom 600 A
ICRM ICRM = 3xICnom 1800 A
VGES -20 ... 20 V
tpsc
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj=150°C 10 µs
Tj-40 ... 175 °C
Inverse diode
IFTj= 175 °C Ts=25°C 139 A
Ts=70°C 110 A
IFnom 600 A
IFRM IFRM = 3xIFnom 1800 A
IFSM tp= 10 ms, sin 180°, Tj=25°C 900 A
Tj-40 ... 175 °C
Freewheeling diode
IFTj= 175 °C Ts=25°C 1397 A
Ts=70°C 1107 A
IFnom 1350 A
IFRM IFRM = 3xIFnom 4050 A
IFSM tp= 10 ms, sin 180°, Tj=25°C 6480 A
Tj-40 ... 175 °C
Module
It(RMS) Tterminal =80°C 700 A
Tstg -40 ... 125 °C
Visol AC sinus 50 Hz, t = 1 min 2500 V
Characteristics
Symbol Conditions min. typ. max. Unit
IGBT
VCE(sat) IC=600A
VGE =15V
chiplevel
Tj=25°C 1.85 2.10 V
Tj=150°C 2.25 2.45 V
VCE0 Tj=25°C 0.8 0.9 V
Tj=150°C 0.7 0.8 V
rCE VGE =15V Tj=25°C 1.8 2.0 m
Tj=150°C 2.6 2.8 m
VGE(th) VGE=VCE, IC=24mA 5 5.8 6.5 V
ICES VGE =0V
VCE = 1200 V
Tj=25°C 0.1 0.3 mA
Tj=150°C mA
Cies VCE =25V
VGE =0V
f=1MHz 35.20 nF
Coes f=1MHz 2.32 nF
Cres f=1MHz 1.88 nF
QGVGE = - 8 V...+ 15 V 3400 nC
RGint Tj=25°C 1.3
SKiM609GAR12E4
2 Rev. 3 – 14.07.2011 © by SEMIKRON
td(on) VCC = 600 V
IC=600A
VGE =15V
RG on =4.1
RG off =4.1
di/dton = 5000 A/µs
di/dtoff =4400A/µs
Tj=150°C 150 ns
trTj=150°C 121 ns
Eon Tj=150°C 136 mJ
td(off) Tj=150°C 808 ns
tfTj=150°C 100 ns
Eoff Tj=150°C 83 mJ
Rth(j-s) per IGBT 0.068 K/W
Inverse diode
VF = VEC IF= 150 A
VGE =0V
chip
Tj=25°C 2.1 2.5 V
Tj=150°C 2.1 2.4 V
VF0 Tj=25°C 1.1 1.3 1.5 V
Tj=150°C 0.7 0.9 1.1 V
rFTj=25°C 4.3 5.6 6.4 m
Tj=150°C 6.7 7.8 8.5 m
IRRM IF= 150 A
di/dtoff =3300A/µs
VGE =-15V
VCC = 600 V
Tj=150°C 153 A
Qrr Tj=150°C 15 µC
Err Tj=150°C 9mJ
Rth(j-s) per diode 0.501 K/W
Freewheeling diode
VF = VEC IF= 600 A
VGE =0V
chip
Tj=25°C 1.7 1.9 V
Tj=150°C 1.4 1.7 V
VF0 Tj=25°C 1.1 1.3 1.5 V
Tj=150°C 0.7 0.9 1.1 V
rFTj=25°C 0.5 0.6 0.7 m
Tj=150°C 0.7 0.9 0.9 m
IRRM IF= 600 A
di/dtoff =5300A/µs
VGE =-15V
VCC = 600 V
Tj=150°C 510 A
Qrr Tj=150°C 123 µC
Err Tj=150°C 39 mJ
Rth(j-s) per diode 0.048 K/W
Module
LCE 10 15 nH
RCC'+EE' terminal-chip Ts=25°C 0.3 m
Ts=125°C 0.5 m
w 1042 g
Temperatur Sensor
R100 TSensor = 100 °C (R25 = 5 k)339
B100/125
R(T) = R100exp[B100/125(1/T-1/373)];
T[K]; 4096 K
Characteristics
Symbol Conditions min. typ. max. Unit
SKiM® 93
GAR
Trench IGBT Modules
SKiM609GAR12E4
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
•V
CE(sat) with positive temperature
coefficient
• Low inductance case
• Isolated by Al2O3 DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts and electrical
contacts
• High short circuit capability, self limiting
to 6 x IC
• Integrated temperature sensor
Typical Applications*
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
SKiM609GAR12E4
© by SEMIKRON Rev. 3 – 14.07.2011 3
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic
SKiM609GAR12E4
4 Rev. 3 – 14.07.2011 © by SEMIKRON
Fig. 7: Typ. switching times vs. ICFig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge
SKiM609GAR12E4
© by SEMIKRON Rev. 3 – 14.07.2011 5
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
SKIM 93
GAR
