
SD1127 – RevB 2/06
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SD1127
DESCRIPTION:
The SD1127 is a epitaxial silicon NPN transistor designed
primarily for VHF mobile communications. The chip of this
transistor is mounted on a beryllia pill to isolate the collector
lead and ground the emitter lead for high gain performance
ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C)
Collector-Base Voltage 36 V
VCEO Collector-Emitter Voltage 18 V
VCES Collector-Emitter Voltage 36 V
VEBO Emitter – Base Voltage 4.0 V
IC Collector Current .64 A
Ptot Total Power Dissipation 8.0
TJ Junction Temperature +200 °C
Thermal Data
RTH(J-C) Junction-case T hermal Resistance 21.9 °C/W
1. Collecto r
2. Base
3. Emitter
TO-39
Features
•175 MHz
•12 .5 VOLTS
•POUT = 4.0 W MINIMUM
•GP= 12.0 dB
•GROUN DED EMITTER
RF & MICROWAVE TRANSIS TORS
VHF FM MOBILE APPLICATIONS