Preliminary Data DIM900ESM45-F000 Single Switch IGBT Module DS5872-1.0 October 2005 FEATURES * 10s Short Circuit Withstand * Soft Punch Through Silicon * Lead Free construction * Isolated MMC Base with AlN Substrates * High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) (LN24283) 4500V 3.0V 900A 1800A *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS * High Reliability Inverters * Motor Controllers * Traction Drives * Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 6500V and currents up to 3600A. Fig. 1 Single switch circuit diagram The DIM900ESM45-F000 is a single switch 4500V, soft punch through n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10us short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Outline type code: E (See package details for further information) Order As: DIM900ESM45-F000 Fig. 2 Electrical connections - (not to scale) Note: When ordering, please use the complete part number Dynex Semiconductor Limited, Doddington Road, Lincoln, United Kingdom, LN6 3LF Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 www.dynexsemi.com Registered in England and Wales: No 3824626 Registered Office: Doddington Road, Lincoln, United Kingdom, LN6 3LF DIM900ESM45-F000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol Parameter Test Conditions VGE =0V Max. Units 4500 V 20 V VCES Collector-emitter voltage VGES Gate-emitter voltage IC Continuous collector current Tcase =90 C 900 A IC(PK) Peak collector current 1ms, Tcase=115 C 1800 A Pmax Tcase =25 C, Tj =150 C 15.6 kW I 2t Max.transistor power dissipation Diode I2t value (Diode arm) VR =0,tp =10ms,Tvj =125 C TBD kA2s Visol Isolation voltage 6000 kV QPD Partial discharge Commoned terminals to base plate. AC RMS,1 min,50Hz IEC1287.V1 =3750V, V2 =2750V, 50Hz RMS 10 pC Typ. Max Units - 8 C/kW - 16 C/kW - 6 C/kW THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 29mm Clearance: 20mm CTI (Critical Tracking Index) 175 Symbol Parameter Rth(j-c) Thermal resistance -transistor Rth(j-c) Thermal resistance -diode Rth(c-h) Thermal resistance -case to heatsink (per module) Junction temperature Tj Tstg Storage temperature range Screw torque 2/7 Test Conditions Min Continuous dissipation junction to case Continuous dissipation junction to case Mounting torque 5Nm (with mounting grease) Transistor - - 150 C Diode - - 125 C -40 - 125 C Mounting M6 - - 5 Nm Electrical connections -M4 - - 2 Nm Electrical connections -M8 - - 10 Nm - Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM900ESM45-F000 ELECTRICAL CHARACTERISTICS T case = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions Min Typ Max Units VGE =0V,VCE =VCES 3 mA VGE =0V,VCE =VCES ,Tcase =125 C 90 mA 8 uA 7.0 V IGES Gate leakage current VGE =20V,VCE =0V VGE(TH) Gate threshold voltage IC =120mA,VGE =VCE VCE(sat) Collector-emitter saturation voltage VGE =15V,IC =900A 3.0 V VGE =15V,IC =900A,TVJ =125 C 3.5 V 5.5 6.5 IF Diode forward current DC 900 A IFM Diode maximum forward current tp =1ms 1800 A VF Diode forward voltage IF =900A 3.5 V IF =900A,TVJ =125 C 3.9 V Cies Input capacitance VCE =25V,VGE =0V,f =1MHz 200 nF Cres Reverse transfer capacitance VCE =25V,VGE =0V,f =1MHz 2.4 nF LM Module inductance -- 10 nH RINT Internal resistance 90 SCData Short circuit.I SC Tj 125 C,VCC 3000V, I1 4200 A t p =10 us, VCE(max)=VCES - L*.di/dt IEC 60747-9 I2 3800 A Note: Measured at the power busbars and not the auxiliary terminals * L is the circuit inductance + L M Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 3/7 DIM900ESM45-F000 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise Symbol Parameter td(off) Turn-off delay time tf Test Conditions Min Typ. Max Units IC =900A 6.0 us Fall time VGE =15V 250 ns EOFF Turn-off energy loss VCE =2250V 1900 mJ td(on) Turn-on delay time RG(ON) =3.3 RG(OFF)=7.5 900 ns tr Rise time Cge =160nF 250 ns EON Turn-on energy loss L ~200nH 4500 mJ Qg Gate charge TBD uC Qrr Diode reverse recovery charge IF =900A,VCE =2250V, TBD uC Irr Diode reverse recovery current dIF/dt =3600A/us TBD A Erec Diode reverse recovery energy 750 mJ Tcase = 125C unless stated otherwise Symbol Parameter td(off) Turn-off delay time tf Test Conditions Min Typ. Max Units IC =900A 6.0 us Fall time VGE =15V 250 ns EOFF Turn-off energy loss VCE =2250V 2250 mJ td(on) Turn-on delay time RG(ON) =3.3 RG(OFF)=7.5 700 ns tr Rise time Cge =160nF 200 ns EON Turn-on energy loss L ~200nH 5200 mJ Qrr Diode reverse recovery charge IF =900A,VCE =2250V, TBD uC Irr Diode reverse recovery current dIF/dt =3600A/us TBD A Erec Diode reverse recovery energy 1150 mJ 4/7 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM900ESM45-F000 1400 2000 Tj=125C 1800 1200 Tvj=125C Tvj=25C 1600 1000 Reverse recovery current, Irr - (A) Collector current, Ic - (A) 1400 1200 1000 800 200 600 400 600 400 800 Conditions: Rgoff=7.5 Cge=160nF Vge=15V Vcc=3000V Ls<120nH 200 0 0 2000 0 2500 3000 3500 4000 4500 500 1000 5000 1500 2000 2500 3000 3500 4000 Reverse voltage, Vr - (V) Collector emitter voltage, Vce - (V) Reverse bias safe operating area Diode reverse bias safe operating area 100 R th IG B T Transient thermal impedance, Zth(j-c) - ('C/kW) R th d io d e 10 1 0 .0 0 1 0 .0 1 0 .1 1 10 P u ls e t im e , t p - ( s ) IGBT Diode Ri (`C/kW) ti (ms) Ri (`C/kW) ti (ms) 1 0.30 0.17 0.60 0.17 2 1.40 8.08 2.81 8.08 3 2.43 51.92 4.85 51.92 4 3.90 280.5 7.81 280.5 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 5/7 DIM900ESM45-F000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 1700g Module outline type code: E 6/7 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM900ESM45-F000 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln Lincolnshire, LN6 3LF. United Kingdom. Fax: +44(0)1522 500550 Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020 Tel: +44(0)1522 500500 Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM. Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as follows:- Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures www.dynexsemi.com 7/7