Dynex Semiconductor Limited, Doddington Road, Lincoln, United Kingdom, LN6 3LF
Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550
www.dynexsemi.com
Registered in England and Wales: No 3824626 Registered Office: Doddington Road, Lincoln, United Kingdom, LN6 3LF
DIM900ESM45-F000
Single Switch IGBT Module
DS5872-1.0 October 2005 (LN24283)
Preliminary
Data
FEATURES
• 10µs Short Circuit Withstand
• Soft Punch Through Silicon
• Lead Free construction
• Isolated MMC Base with AlN Substrates
• High Thermal Cycling Capability
APPLICATIONS
• High Reliability Inverters
• Motor Controllers
• Traction Drives
• Choppers
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 6500V and
currents up to 3600A.
The DIM900ESM45-F000 is a single switch 4500V, soft
punch through n-channel enhancement mode, insulated
gate bipolar transistor (IGBT) module. The IGBT has a
wide reverse bias safe operating area (RBSOA) plus 10us
short circuit withstand. This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers
to optimise circuit layouts and utilise grounded heat sinks
for safety.
ORDERING INFORMATION
Order As:
DIM900ESM45-F000
Note: When ordering, please use the complete part number
KEY PARAMETERS
V CES 4500V
V CE(sat) * (typ) 3.0V
I C (max) 900A
I C(PK) (max) 1800A
*(measured at the power busbars and not the auxiliary terminals)
Fig. 1 Single switch circuit diagram
Outline type code: E
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
DIM900ESM45-F000
2/7 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate
safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Tcase = 25°C unless stated otherwise
Symbol Parameter Test Conditions Max. Units
VCES Collector-emitter voltage VGE =0V 4500 V
VGES Gate-emitter voltage ±20 V
ICContinuous collector current Tcase =90 °C 900 A
IC(PK) Peak collector current 1ms, Tcase=115 °C 1800 A
Pmax Max.transistor power
dissipation Tcase =25 °C, Tj =150 °C 15.6 kW
I2t Diode I2t value (Diode arm) VR =0,tp =10ms,Tvj =125 °C TBD kA2s
Visol Isolation voltage Commoned terminals to base plate. AC RMS,1
min,50Hz 6000 kV
QPD Partial discharge IEC1287.V1 =3750V, V2 =2750V, 50Hz RMS 10 pC
THERMAL AND MECHANICAL RATINGS
Internal insulation material: AlN
Baseplate material: AlSiC
Creepage distance: 29mm
Clearance: 20mm
CTI (Critical Tracking Index) 175
Symbol Parameter Test Conditions Min Typ. Max Units
Rth(j-c) Thermal resistance -transistor Continuous dissipation -
junction to case - 8 °C/kW
Rth(j-c) Thermal resistance -diode Continuous dissipation -
junction to case - 16 °C/kW
Rth(c-h) Thermal resistance -case to heatsink
(per module) Mounting torque 5Nm
(with mounting grease) - 6 °C/kW
TjJunction temperature Transistor - - 150 °C
Diode - - 125 °C
Tstg Storage temperature range - -40 - 125 °C
Screw torque Mounting M6 - - 5 Nm
Electrical connections -M4 - - 2 Nm
Electrical connections -M8 - - 10 Nm
DIM900ESM45-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 3/7
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
T case = 25°C unless stated otherwise.
Symbol Parameter Test Conditions Min Typ Max Units
ICES Collector cut-off current VGE =0V,VCE =VCES 3 mA
VGE =0V,VCE =VCES ,Tcase =125 °C 90 mA
IGES Gate leakage current VGE =±20V,VCE =0V 8uA
VGE(TH) Gate threshold voltage IC =120mA,VGE =VCE 5.5 6.5 7.0 V
VCE(sat)†Collector-emitter saturation voltage VGE =15V,IC =900A 3.0 V
VGE =15V,IC =900A,TVJ =125 °C 3.5 V
IFDiode forward current DC 900 A
IFM Diode maximum forward current tp =1ms 1800 A
VFDiode forward voltage IF =900A 3.5 V
IF =900A,TVJ =125 °C 3.9 V
Cies Input capacitance VCE =25V,VGE =0V,f =1MHz 200 nF
Cres Reverse transfer capacitance VCE =25V,VGE =0V,f =1MHz 2.4 nF
LMModule inductance -- 10 nH
RINT Internal resistance 90 µΩ
SCData Short circuit.I SC Tj ≤125 °C,VCC ≤3000V, I 14200 A
t p =10 us, I 2
VCE(max)=VCES – L*.di/dt
IEC 60747-9
3800 A
Note:
†Measured at the power busbars and not the auxiliary terminals
*L is the circuit inductance + L M
DIM900ESM45-F000
4/7 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol Parameter Test Conditions Min Typ. Max Units
td(off) Turn-off delay time IC =900A 6.0 us
tfFall time VGE =±15V 250 ns
EOFF Turn-off energy loss VCE =2250V 1900 mJ
td(on) Turn-on delay time RG(ON) =3.3Ω RG(OFF)=7.5Ω900 ns
trRise time Cge =160nF 250 ns
EON Turn-on energy loss L ~200nH 4500 mJ
QgGate charge TBD uC
Qrr Diode reverse recovery charge IF =900A,VCE =2250V, TBD uC
Irr Diode reverse recovery current dIF/dt =3600A/us TBD A
Erec Diode reverse recovery energy 750 mJ
Tcase = 125°C unless stated otherwise
Symbol Parameter Test Conditions Min Typ. Max Units
td(off) Turn-off delay time IC =900A 6.0 us
tfFall time VGE =±15V 250 ns
EOFF Turn-off energy loss VCE =2250V 2250 mJ
td(on) Turn-on delay time RG(ON) =3.3Ω RG(OFF)=7.5Ω700 ns
trRise time Cge =160nF 200 ns
EON Turn-on energy loss L ~200nH 5200 mJ
Qrr Diode reverse recovery charge IF =900A,VCE =2250V, TBD uC
Irr Diode reverse recovery current dIF/dt =3600A/us TBD A
Erec Diode reverse recovery energy 1150 mJ
DIM900ESM45-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 5/7
www.dynexsemi.com
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2000 2500 3000 3500 4000 4500
5000
Collector emitter voltage, Vce - (V)
Collector current, Ic - (A)
Tvj=125°C
Tvj=25°C
Conditions:
Rgoff=7.5Ω
Cge=160nF
Vge=±15V
Vcc=3000V
Ls<120nH
0
200
400
600
800
1000
1200
1400
0 500 1000 1500 2000 2500 3000 3500 4000
Reverse voltage, Vr - (V)
Reverse recovery current, Irr - (A)
Tj=125°C
Reverse bias safe operating area Diode reverse bias safe operating area
1
1 0
100
0 .0 0 1 0 .0 1 0 .1 1 1 0
P u ls e tim e , t p - ( s )
Transient thermal impedance, Zth(j-c) - ('C/kW)
R t h IG B T
R t h d io d e
1 2 3 4
IGBT Ri (‘C/kW) 0.30 1.40 2.43 3.90
ti (ms) 0.17 8.08 51.92 280.5
Diode Ri (‘C/kW) 0.60 2.81 4.85 7.81
ti (ms) 0.17 8.08 51.92 280.5
Transient thermal impedance
DIM900ESM45-F000
6/7 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm,
unless stated otherwise.
DO NOT SCALE.
Nominal weight: 1700g
Module outline type code: E
DIM900ESM45-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures 7/7
www.dynexsemi.com
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the
basic semiconductor, and has developed a flexible range of
heatsink and clamping systems in line with advances in
device voltages and current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general
use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy
the growing needs of our customers.
Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly
Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been
designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and
liquid cooling (with flow rates) is available on request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest sales
representative or Customer Services.
http://www.dynexsemi.com
e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LTD Tel: +44(0)1522 502753 / 502901. Fax: +44(0)1522 500020
Doddington Road, Lincoln
Lincolnshire, LN6 3LF. United Kingdom. Tel: +44(0)1522 500500
Fax: +44(0)1522 500550
Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR
RESALE. PRODUCED IN UNITED KINGDOM.
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hand corner of the front page, to indicate product status. The annotations are as
follows:-
Target Information: This is the most tentative form of information and represents a very preliminary specification. No
actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may
change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information
only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or
contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or
suitability of any product or service. The Company reserves the right to alter without prior notice the
specification, design or price of any product or service. Information concerning possible
methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user’s responsibility to
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products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided
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