Datasheet 1 Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 3142D
Product Summary
Drain source voltage
V
DS 42 V
On-state resistance RDS(on) 28 mΩ
Nominal load current ID(Nom) 4.6 A
Clamping energy EAS 3.5 J
Application
• All kinds of resistive, inductive and capacitive loads in switching
or linear applications
• µC compatible power switch for 12 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded
protection functions.
Gate-Driving
Unit
ESD Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Overvoltage-
Protection
Current
Limitation
M
Vbb
In
Source
Drain
HITFET
Pin 1
Pin 2 and 4 (TAB)
Pin 3
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown
•Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
P / PG-TO252-3-11
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Datasheet 2 Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 3142D
Maximum Ratings at T
j
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Drain source voltage
V
DS
42 V
Drain source voltage for short circuit protection
T
j
= -40...150°C V
DS(SC)
28
Continuous input current
-0.2V ≤V
IN
≤ 10V
V
IN
< -0.2V or V
IN
> 10V
I
IN
no limit
|I
IN
| ≤ 2
mA
Operating temperature
T
j
-40 ...+150 °C
Storage temperature
T
stg
-55 ... +150
Power dissipation
T
C
= 85 °C
6cm
2
cooling area ,
T
A
= 85 °C
P
tot
59
1.1
W
Unclamped single pulse inductive energy
1)
E
A
S
3.5 J
Load dump protection V
LoadDump2)
= V
A
+ V
S
V
IN
= 0 and 10 V, t
d
= 400 ms, R
I
= 2 Ω,
R
L
= 3 Ω,
V
A
= 13.5 V
V
LD
67.5 V
Electrostatic discharge voltage
(Human Body Model)
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
V
ESD
2kV
Thermal resistance
junction - case:
R
thJC
1.1 K/W
SMD: junction - ambient
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA
115
55
1 Not tested, specified by design.
2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
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Datasheet 3 Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 3142D
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
= 25°C, unless otherwise specified min. typ. max.
Characteristics
Drain source clamp voltage
T
j
= - 40 ...+ 150, I
D
= 10 mA V
DS(AZ)
42 -55 V
Off-state drain current T
j
= -40 ... +150°C
V
DS
= 32 V, V
IN
= 0 V I
DSS
-1.5 20 µA
Input threshold voltage
I
D
= 1.2 mA,
T
j
= 25 °C
I
D
= 1.2 mA,
T
j
= 150 °C
V
IN(th)
1.3
0.8 1.7
-2.2
-
V
On state input current I
IN(on)
-10 30 µA
On-state resistance
V
IN
= 5 V, I
D
= 4.6 A,
T
j
= 25 °C
V
IN
= 5 V, I
D
= 4.6 A,
T
j
= 150 °C
R
DS(on)
-
-27
54 34
68
mΩ
On-state resistance
V
IN
= 10 V, I
D
= 4.6 A,
T
j
= 25 °C
V
IN
= 10 V, I
D
= 4.6 A,
T
j
= 150 °C
R
DS(on)
-
-23
46 28
56
Nominal load current
T
j
< 150°C, V
IN
= 10 V,
T
A
= 85 °C, SMD
1)
I
D(Nom)
4.6 - - A
Nominal load current
V
IN
= 10 V,
V
DS
= 0.5 V,
T
C
= 85 °C,
T
j
< 150°C I
D(ISO)
12.6 - -
Current limit (active if
V
DS
>2.5 V)
2)
V
IN
= 10 V,
V
DS
= 12 V, t
m
= 200 µs I
D(lim)
30 45 55
1@ 6 cm2cooling area
2Device switched on into existing short circuit (see diagram Determination of ID(lim)). If the device is in on conditio
n
and a short circuit occurs, these values might be exceeded for max. 50 µs.
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Datasheet 4 Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 3142D
Electrical Characteristics
Parameter Symbol Values Unit
at T
j
= 25°C, unless otherwise specified min. typ. max.
Dynamic Characteristics
Turn-on time VIN to 90% ID:
RL = 4.7 Ω,VIN = 0 to 10 V, Vbb = 12 V ton -60 120 µs
Turn-off time VIN to 10% ID:
RL = 4.7 Ω,VIN = 10 to 0 V, Vbb = 12 V toff -60 120
Slew rate on 70 to 50% Vbb:
RL = 4.7 Ω,VIN = 0 to 10 V, Vbb = 12 V -dVDS/dton -0.3 1.5 V/µs
Slew rate off 50 to 70% Vbb:
RL = 4.7 Ω,VIN = 10 to 0 V, Vbb = 12 V dVDS/dtoff -0.3 1.5
Protection Functions1)
Thermal overload trip temperature T
j
t150 175 -°C
Input current protection mode IIN
(
Prot
)
-220 400 µA
Input current protection mode
T
j = 150 °C IIN(Prot) -180 400
Unclamped single pulse inductive energy 2)
ID = 4.6 A,
T
j = 25 °C, Vbb = 12 V EAS 3.5 - - J
Inverse Diode
Inverse diode forward voltage
I
F
= 51 A, t
m
= 250 µs, V
IN
= 0 V,
t
P
= 300 µs
V
SD
-1.0 -V
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2 Not tested, specified by design.
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Datasheet 5 Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 3142D
Block diagram
Inductive and overvoltage
output clamp
Terms
HITFET
IN D
VIN
IDVDS
1
IIN
S
Vbb
RL
2
3
HITFET
VZD
S
Short circuit behaviour
Input circuit (ESD protection)
IN
t
V
t
I
IN
t
I
D
t
T
j
Gate Drive
Source/
Ground
Input
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Datasheet 6 Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 3142D
1 Maximum allowable power dissipation
Ptot = f(TC) resp.
Ptot = f(TA) @ RthJA=55 K/W
-50 -25 025 50 75 100
°C
150
T
A
;T
C
0
0.5
1
1.5
2
2.5
3
3.5
4
W
5
Ptot
SMD @ 6cm2
Rthjc = 1.1 K/W
2 On-state resistance
RON = f(Tj); ID=12.6A; VIN=10V
-50 -25 025 50 75 100 125
°C
175
T
j
0
10
20
30
40
mΩ
60
RDS(on)
typ.
max.
3 On-state resistance
RON = f(Tj); ID= 12.6A; VIN=5V
-50 -25 025 50 75 100 125
°C
175
T
j
0
10
20
30
40
50
60
mΩ
80
RDS(on)
typ.
max.
4 Typ. input threshold voltage
VIN(th) = f(Tj);ID = 1.2 mA; VDS = 12V
-50 -25 025 50 75 100 °C 150
Tj
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
2
VGS(th)
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Datasheet 7 Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 3142D
5 Typ. transfer characteristics
I
D
=f(V
IN
); V
DS
=12V; T
Jstart
=25°C
1 2 3 4 5 6 7 8
V10
V
IN
0
5
10
15
20
25
30
35
40
A
50
I
D
6 Typ. short circuit current
I
D(lim)
= f(T
j
); V
DS
=12V
Parameter: V
IN
-50 -25 025 50 75 100 125 °C 175
T
j
0
5
10
15
20
25
30
35
40
45
50
A
60
I
D
5V
Vin=10V
7 Typ. output characteristics
I
D
=f(V
DS
); T
Jstart
=25°C
Parameter: V
IN
0 1 2 3 4 V6
V
DS
0
5
10
15
20
25
30
35
40
45
50
A
60
I
D
Vin=3V
4V
5V
6V
7V
10V
8 Typ. off-state drain current
I
DSS
= f(T
j
)
-50 -25 025 50 75 100 125
°C 175
T
j
0
2.5
5
7.5
10
12.5
15
17.5
20
µA
25
I
DSS
typ.
max.
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Datasheet 8 Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 3142D
9 Typ. overload current
ID(lim) = f(t),Vbb=12 V, no heatsink
Parameter: Tjstart
00.5 11.5 22.5 33.5 4
ms
5
t
0
10
20
30
40
50
A
70
ID(lim)
-40°C
25°C
85°C
150°C
10 Typ. transient thermal impedance
ZthJA=f(tp) @ 6 cm2 cooling area
Parameter: D=tp/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
3
s
tp
-3
10
-2
10
-1
10
0
10
1
10
2
10
K/W
ZthJA
Single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
11 Determination of ID(lim)
ID(lim) = f(t); tm = 200µs
Parameter: TJstart
00.1 0.2 0.3 0.4
ms
0.6
t
0
10
20
30
40
50
A
70
ID(lim)
-40°C
25°C
85°C
150°C
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Datasheet 9 Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 3142D
Package Outlines
1 Package Outlines
Figure 1 PG-TO252-3-11 (Plastic Dual Small Outline Package) (RoHS-Compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-
free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
Please specify the package needed (e.g. green package) when placing an order
5.4
±0.1
-0.05
6.5
+0.15
A
±0.5
9.98
6.22 -0.2
1±0.1
±0.15
0.8
0.15 MAX.
±0.1
per side 0.75
2.28
4.57
+0.08
GPT09277
-0.04
0.5
2.3
-0.10
+0.05
B
0.51 MIN.
+0.08
-0.04
0.5
0...0.15
B
A0.25
M
0.1
All metal surfaces tin plated,
except area of cut.
3x
(5)
(4.24)
-0.01
+0.20
0.9
B
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.Dimensions in mm
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Datasheet 10 Rev. 1.3, 2006-12-22
Smart Low Side Power Switch
Power HITFET BTS 3142D
Revision History
2 Revision History
Version Date Changes
Rev. 1.3 2006-12-22 released automotive green and robust version (BTS)
Package parameter (humidity and climatic) removed in Maximum ratings
Rev. 1.2 2006-12-11 AEC icon added
RoHS icon added
Green product (RoHS-compliant) added to the feature list
Package information updated to green
Green explanation added
Rev. 1.1 2006-08-08 released non automotive green version (ITS)
Rev. 1.0 2004-03-05 released production version
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Edition 2006-12-22
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
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