JANSF2N7268U - International Rectifier

Absolute Maximum Ratings

Parameter Units

ID @ VGS = 12V, TC = 25°C Continuous Drain Current 34

ID @ VGS = 12V, TC = 100°C Continuous Drain Current 21

IDM Pulsed Drain Current À136

PD @ TC = 25°C Max. Power Dissipation 150 W

Linear Derating Factor 1.2 W/°C

VGS Gate-to-Source Voltage ±20 V

EAS Single Pulse Avalanche Energy Á500 mJ

IAR Avalanche Current À34 A

EAR Repetitive Avalanche Energy À15 mJ

dv/dt Peak Diode Recovery dv/dt Â5.5 V/ns

TJOperating Junction -55 to 150

TSTG Storage Temperature Range

PCKG. Mounting Surface Temp. 300 (for 5s)

Weight 2.6 (Typical) g

Pre-Irradiation

International Rectifier’s RADHardTM HEXFET® technology

provides high performance power MOSFETs for space

applications. This technology has over a decade of

proven performance and reliability in satellite

applications. These devices have been characterized

for both Total Dose and Single Event Effects (SEE). The

combination of low Rdson and low gate charge reduces

the power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of

paralleling and temperature stability of electrical

parameters.

RADIATION HARDENED

JANSR2N7268U

POWER MOSFET

SURFACE MOUNT (SMD-1)

05/11/06

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100V, N-CHANNEL

RAD Hard

™

HEXFET

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on) IDQPL Part Number

IRHN7150 100K Rads (Si) 0.065Ω34A JANSR2N7268U

IRHN3150 300K Rads (Si) 0.065Ω34A JANSF2N7268U

IRHN4150 500K Rads (Si) 0.065Ω34A JANSG2N7268U

IRHN8150 1000K Rads (Si) 0.065Ω34A JANSH2N7268U

For footnotes refer to the last page

IRHN7150

SMD-1

REF: MIL-PRF-19500/603

Features:

nSingle Event Effect (SEE) Hardened

nLow RDS(on)

nLow Total Gate Charge

nSimple Drive Requirements

nEase of Paralleling

nHermetically Sealed

nSurface Mount

nCeramic Package

nLight Weight

PD - 90720E

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IRHN7150, JANSR2N7268U Pre-Irradiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter Min Typ Max Units Test Conditions

BVDSS Drain-to-Source Breakdown Voltage 100 — — V VGS =0 V, ID = 1.0mA

∆BVDSS/∆TJTemperature Coefficient of Breakdown — 0.13 — V/°C Reference to 25°C, ID = 1.0mA

Voltage

RDS(on) Static Drain-to-Source — — 0.065 VGS = 12V, ID = 21A

On-State Resistance — — 0.070 ΩVGS = 12V, ID = 34A

VGS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS = VGS, ID = 1.0mA

gfs Forward Transconductance 8.0 — — S ( )V

DS > 15V, IDS = 21A 

IDSS Zero Gate Voltage Drain Current — — 25 VDS= 80V,VGS=0V

— — 250 VDS = 80V

VGS = 0V, TJ = 125°C

IGSS Gate-to-Source Leakage Forward — — 100 VGS = 20V

IGSS Gate-to-Source Leakage Reverse — — -100 VGS = -20V

QgTotal Gate Charge — — 160 VGS = 12V, ID = 34A

Qgs Gate-to-Source Charge — — 35 nC VDS = 50V

Qgd Gate-to-Drain (‘Miller’) Charge — — 65

td(on) Turn-On Delay Time — — 45 VDD = 50V, ID = 34A,

trRise Time — — 190 VGS = 12V, RG =2.35Ω

td(off) Turn-Off Delay Time — — 170

tfFall Time — — 130

LS + LDTotal Inductance — 4.0 —

Ciss Input Capacitance — 4300 — VGS = 0V, VDS = 25V

Coss Output Capacitance — 1200 — pF f = 1.0MHz

Crss Reverse Transfer Capacitance — 200 —

Ω



µA

Note: Corresponding Spice and Saber models are available on the International Rectifier Website.

For footnotes refer to the last page

Source-Drain Diode Ratings and Characteristics

Parameter Min Typ Max Units Test Conditions

ISContinuous Source Current (Body Diode) — — 34

ISM Pulse Source Current (Body Diode) À— — 136

VSD Diode Forward Voltage — — 1.4 V Tj = 25°C, IS = 34A, VGS = 0V Ã

trr Reverse Recovery Time — — 570 ns Tj = 25°C, IF = 34A, di/dt ≥ 100A/µs

QRR Reverse Recovery Charge — — 5.8 µC VDD ≤ 25V Ã

ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D.

Measured from the center of

drain pad to center of source pad

Thermal Resistance

Parameter Min Typ Max Units Test Conditions

RthJC Junction-to-Case — — 0.83

RthJ-PCB Junction-to-PC board — 6.6 — soldered to a 1”sq. copper-clad board

°C/W

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Pre-Irradiation IRHN7150, JANSR2N7268U

T able 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ

Parameter 100K Rads(Si)1 300 K- 1000K Rads (Si)2

Units

Test Conditions

Min Max Min Max

BVDSS Drain-to-Source Breakdown Voltage 200 — 200 — V VGS = 0V, ID = 1.0mA

VGS(th) Gate Threshold Voltage 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0mA

IGSS Gate-to-Source Leakage Forward — 100 — 100 nA VGS = 20V

IGSS Gate-to-Source Leakage Reverse — -100 — -100 VGS = -20 V

IDSS Zero Gate Voltage Drain Current — 25 — 50 µA VDS=80V, VGS =0V

RDS(on) Static Drain-to-Source Ã — 0.065 — 0.09 Ω VGS = 12V, ID =21A

On-State Resistance (TO-3)

RDS(on) Static Drain-to-Source Ã — 0.065 — 0.09 Ω VGS = 12V, ID =21A

On-State Resistance (SMD-1)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation Characteristics

1. Part number IRHN7150 (JANSR2N7268U)

2. Part numbers IRHN3150 (JANSF2N7268U), IRHN4150 (JANSG2N7268U) and IRHN8150 (JANSH2N7268U)

Fig a. Single Event Effect, Safe Operating Area

VSD Diode Forward Voltage Ã — 1.4 — 1.4 V VGS = 0V, IS = 34A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

T able 2. Single Event Effect Safe Operating Area

I on L ET Energy Range VDS(V)

(MeV/(mg/cm2)) (MeV) (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V

Cu 28 285 43 100 100 100 80 60

Br 36.8 305 39 100 90 70 50 —

100

120

0 -5 -10 -15 -20 -25

VGS

VDS

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IRHN7150, JANSR2N7268U Pre-Irradiation

Post-Irradiation

Fig 2. Typical Response of On-State Resistance

Vs. Total Dose Exposure

Fig 1. Typical Response of Gate Threshhold

Voltage Vs. Total Dose Exposure

Fig 3. Typical Response of Transconductance

Vs. Total Dose Exposure Fig 4. Typical Response of Drain to Source

Breakdown Vs. Total Dose Exposure

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Pre-Irradiation IRHN7150, JANSR2N7268U

Post-Irradiation

Fig 6. Typical On-State Resistance Vs.

Neutron Fluence Level

Fig 5. Typical Zero Gate Voltage Drain

Current Vs. Total Dose Exposure

Fig 8b. VDSS Stress Equals

80% of BVDSS During Radiation Fig 9. High Dose Rate

(Gamma Dot) Test Circuit

Fig 7. Typical Transient Response

of Rad Hard HEXFET During

1x1012 Rad (Si)/Sec Exposure

Fig 8a. Gate Stress of V GSS

Equals 12 Volts During

Radiation

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IRHN7150, JANSR2N7268U Pre-Irradiation

Post-IrradiationRadiation Characteristics

Fig 11. Typical Output Characteristics

Post-Irradiation 100K Rads (Si)

Fig 10. Typical Output Characteristics

Pre-Irradiation

Fig 12. Typical Output Characteristics

Post-Irradiation 300K Rads (Si) Fig 13. Typical Output Characteristics

Post-Irradiation 1 Mega Rads (Si)

Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0 Vdc

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Pre-Irradiation IRHN7150, JANSR2N7268U

Radiation Characteristics

Fig 16. Typical Output Characteristics

Post-Irradiation 300K Rads (Si) Fig 17. Typical Output Characteristics

Post-Irradiation 1 Mega Rads (Si)

Fig 14. Typical Output Characteristics

Pre-Irradiation Fig 15. Typical Output Characteristics

Post-Irradiation 100K Rads (Si)

Note: Bias Conditions during radiation: VGS = 0 Vdc, VDS = 160 Vdc

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IRHN7150, JANSR2N7268U Pre-Irradiation

Fig 21. Normalized On-Resistance

Vs. Temperature

Fig 19. Typical Output CharacteristicsFig 18. Typical Output Characteristics

Fig 20. Typical Transfer Characteristics

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Pre-Irradiation IRHN7150, JANSR2N7268U

Fig 25. Maximum Safe Operating Area

Fig 23. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 22. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 24. Typical Source-Drain Diode

Forward Voltage

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IRHN7150, JANSR2N7268U Pre-Irradiation

Fig 27a. Switching Time Test Circuit

GS t

d(on)

d(off)

Fig 27b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

VGS

D.U.T.

VDD

Fig 28. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 26. Maximum Drain Current Vs.

Case Temperature

VGS

25 50 75 100 125 150

T , Case Temperature ( C)

I , Drain Current (A)

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Pre-Irradiation IRHN7150, JANSR2N7268U

Charge

D.U.T. V

3mA

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

12 V

Fig 30b. Gate Charge Test Circuit

Fig 30a. Basic Gate Charge Waveform

Fig 29c. Maximum Avalanche Energy

Vs. Drain Current

Fig 29b. Unclamped Inductive Waveforms

Fig 29a. Unclamped Inductive Test Circuit

(BR)DSS

0.01

Ω

D.U.T

VDS

-V

DRIVER

15V

20V

VGS

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IRHN7150, JANSR2N7268U Pre-Irradiation

Ã Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Ä Total Dose Irradiation with VGS Bias.

12 volt VGS applied and VDS = 0 during

irradiation per MIL-STD-750, method 1019, condition A.

Å Total Dose Irradiation with VDS Bias.

80 volt VDS applied and VGS = 0 during

irradiation per MlL-STD-750, method 1019, condition A.

À Repetitive Rating; Pulse width limited by

maximum junction temperature.

Á VDD = 25V, starting TJ = 25°C, L=0.86mH

Peak IL = 34A, VGS =12V

Â ISD ≤ 34A, di/dt ≤ 140A/µs,

VDD ≤ 100V, TJ ≤ 150°C

Foot Notes:

Case Outline and Dimensions — SMD-1

PAD ASSIGNMENTS

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 05/2006